FR83751E - Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process - Google Patents

Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process

Info

Publication number
FR83751E
FR83751E FR876925A FR876925A FR83751E FR 83751 E FR83751 E FR 83751E FR 876925 A FR876925 A FR 876925A FR 876925 A FR876925 A FR 876925A FR 83751 E FR83751 E FR 83751E
Authority
FR
France
Prior art keywords
single crystals
conforming
silicon
those obtained
similar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR876925A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES73980A external-priority patent/DE1225148B/en
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Priority to FR876925A priority Critical patent/FR83751E/en
Application granted granted Critical
Publication of FR83751E publication Critical patent/FR83751E/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
FR876925A 1961-05-16 1961-10-24 Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process Expired FR83751E (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR876925A FR83751E (en) 1961-05-16 1961-10-24 Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES73980A DE1225148B (en) 1961-05-16 1961-05-16 Process for precipitating a semiconducting element and an activator substance from a reaction gas
FR876925A FR83751E (en) 1961-05-16 1961-10-24 Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process

Publications (1)

Publication Number Publication Date
FR83751E true FR83751E (en) 1964-10-09

Family

ID=25996459

Family Applications (1)

Application Number Title Priority Date Filing Date
FR876925A Expired FR83751E (en) 1961-05-16 1961-10-24 Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process

Country Status (1)

Country Link
FR (1) FR83751E (en)

Similar Documents

Publication Publication Date Title
FR1450440A (en) Process for the preparation of 1-glycosyl-5-azacytosines and products according to those obtained by the present process or similar process
FR1334957A (en) Process for the preparation of novel amino-pyrazoles
FR1277723A (en) Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process
FR83751E (en) Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process
FR84001E (en) Process for preparing single crystals of silicon and single crystals conforming to those obtained by said process or similar process
FR1207461A (en) Process for the preparation of improved elastomers and elastomers obtained by this process
CH387024A (en) Process for the preparation of 11α-bromo-steroids and use of the 11α-bromo-steroids obtained by this process
FR1311158A (en) Preparation of organic silicon derivatives
FR1367271A (en) Process for preparing sultones and products conforming to those obtained by said process or similar process
BE622185A (en) Process for the preparation of diaryl ether-sultams
BE619873A (en) Process for the preparation of nitrocyclohexane
CH404964A (en) Process for the preparation of copolymers and use of the copolymers obtained by this process
FR1279720A (en) Process for preparing oligomers of isobutene
FR1349124A (en) Process for the preparation of cyclopropyl amines
FR1314200A (en) Process for the preparation of 5'-mononucleotides
FR1290736A (en) Process for the preparation of cellulose acetate and products obtained by this process
CH407974A (en) Process for the preparation of substituted tetralones
FR1345219A (en) Process for the preparation of 17-desmethoxy-17alpha-ethylereserpine and products according to those obtained by the present process or similar process
BE610326A (en) Process for the preparation of semiconductor materials
FR1271786A (en) Process for the preparation of multi-layered alpha scintillators and scintillators according to those obtained by said process or similar process
FR1318489A (en) Process for the preparation of hydroxy-aldehydes
FR1430153A (en) Process for the preparation of 1-glycosyl-5-azacytosines and products according to those obtained by the present process or similar process
CH410933A (en) Process for the preparation of new A-nor-B-homo-6-oxo-steroids
FR1305784A (en) Process for the preparation of 5-bis- / beta-chlorethyl / -aminomethyleuracil hydrochloride and products according to those obtained by the present process or similar process
FR1328455A (en) Process for the preparation of beta-ketoamides and beta-ketoamides thus obtained