FR79757E - Process for the endowment of semiconductor material - Google Patents

Process for the endowment of semiconductor material

Info

Publication number
FR79757E
FR79757E FR856654A FR856654A FR79757E FR 79757 E FR79757 E FR 79757E FR 856654 A FR856654 A FR 856654A FR 856654 A FR856654 A FR 856654A FR 79757 E FR79757 E FR 79757E
Authority
FR
France
Prior art keywords
endowment
semiconductor material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR856654A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR79757E publication Critical patent/FR79757E/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
FR856654A 1958-06-14 1961-03-23 Process for the endowment of semiconductor material Expired FR79757E (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES58617A DE1128048B (en) 1958-06-14 1958-06-14 Process for p- or n-doping of silicon for semiconductor arrangements
DES67834A DE1132663B (en) 1958-06-14 1960-03-31 Process for p- or n-doping of silicon for semiconductor arrangements

Publications (1)

Publication Number Publication Date
FR79757E true FR79757E (en) 1963-01-25

Family

ID=25995536

Family Applications (2)

Application Number Title Priority Date Filing Date
FR796624A Expired FR1226342A (en) 1958-06-14 1959-06-04 Process for the endowment of semiconductor material
FR856654A Expired FR79757E (en) 1958-06-14 1961-03-23 Process for the endowment of semiconductor material

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR796624A Expired FR1226342A (en) 1958-06-14 1959-06-04 Process for the endowment of semiconductor material

Country Status (5)

Country Link
CH (2) CH371520A (en)
DE (2) DE1128048B (en)
FR (2) FR1226342A (en)
GB (2) GB892445A (en)
NL (3) NL113666C (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548647A (en) * 1955-06-28
DE1029939B (en) * 1955-06-27 1958-05-14 Licentia Gmbh Process for the production of electrically asymmetrically conductive semiconductor systems

Also Published As

Publication number Publication date
NL240106A (en) 1900-01-01
NL261580A (en) 1900-01-01
GB963136A (en) 1964-07-08
GB892445A (en) 1962-03-28
CH371520A (en) 1963-08-31
DE1128048B (en) 1962-04-19
CH391107A (en) 1965-04-30
DE1132663B (en) 1962-07-05
FR1226342A (en) 1960-07-11
NL113666C (en) 1900-01-01

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