FR70514E - Improvements to p-n junction devices and their manufacture - Google Patents

Improvements to p-n junction devices and their manufacture

Info

Publication number
FR70514E
FR70514E FR70514DA FR70514E FR 70514 E FR70514 E FR 70514E FR 70514D A FR70514D A FR 70514DA FR 70514 E FR70514 E FR 70514E
Authority
FR
France
Prior art keywords
manufacture
junction devices
junction
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie Francaise Thomson Houston SA
Original Assignee
Compagnie Francaise Thomson Houston SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Francaise Thomson Houston SA filed Critical Compagnie Francaise Thomson Houston SA
Application granted granted Critical
Publication of FR70514E publication Critical patent/FR70514E/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
FR70514D 1954-03-12 1956-06-14 Improvements to p-n junction devices and their manufacture Expired FR70514E (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41587554A 1954-03-12 1954-03-12
US516637A US2822309A (en) 1954-03-12 1955-06-20 P-n junction device and method of making the same by local fusion

Publications (1)

Publication Number Publication Date
FR70514E true FR70514E (en) 1959-05-29

Family

ID=27023150

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1153856D Expired FR1153856A (en) 1954-03-12 1955-03-11 Improvements to p-n junction devices and their manufacture
FR70514D Expired FR70514E (en) 1954-03-12 1956-06-14 Improvements to p-n junction devices and their manufacture

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR1153856D Expired FR1153856A (en) 1954-03-12 1955-03-11 Improvements to p-n junction devices and their manufacture

Country Status (4)

Country Link
US (1) US2822309A (en)
DE (2) DE1019013B (en)
FR (2) FR1153856A (en)
GB (1) GB781795A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
US3001895A (en) * 1957-06-06 1961-09-26 Ibm Semiconductor devices and method of making same
US2980560A (en) * 1957-07-29 1961-04-18 Rca Corp Methods of making semiconductor devices
US2984577A (en) * 1957-10-24 1961-05-16 Monsanto Chemicals Process for the production of boron phosphide
NL238556A (en) * 1958-04-24
FR1230933A (en) * 1958-07-26 1960-09-21
BE632279A (en) * 1962-05-14
US4364778A (en) * 1980-05-30 1982-12-21 Bell Telephone Laboratories, Incorporated Formation of multilayer dopant distributions in a semiconductor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL70486C (en) * 1945-12-29
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
US2691736A (en) * 1950-12-27 1954-10-12 Bell Telephone Labor Inc Electrical translation device, including semiconductor
BE510303A (en) * 1951-11-16

Also Published As

Publication number Publication date
DE1019013B (en) 1957-11-07
FR1153856A (en) 1958-03-28
GB781795A (en) 1957-08-28
US2822309A (en) 1958-02-04
DE1026433B (en) 1958-03-20

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