FR3111891A1 - MATERIAL INCLUDING A FINE DIELECTRIC ZINC-BASED OXIDE UNDERLAYMENT STACK AND PROCESS FOR DEPOSITING THIS MATERIAL - Google Patents

Abstract

The invention relates to a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) comprising at least one metallic functional layer (140) and comprising:- an underlayer of oxide based on zinc, ZnO (129) between 0.3 and 5.0 nm;- a dielectric underlayer of titanium based oxide, TiOx (127) which is located under and in contact with said underlayer of zinc-based oxide, ZnO (129), with a thickness between 5.0 and 50.0 nm; - titanium-based oxide TiOx (150) overblocking layer between 0.3 and 5.0 nm; - an overlayer of zinc-based oxide, ZnO (161) between 2.0 and 10.0 nm; and- a dielectric overlayer (165). Abstract Figure: Figure 1

Description

MATERIAL COMPRISING A ZINC-BASED FINE OXIDE DIELECTRIC UNDERLAYER AND METHOD FOR DEPOSITING THIS MATERIAL

The invention relates to a material comprising a substrate coated on one side with a stack of thin layers with reflection properties in the infrared and/or in solar radiation comprising at least one metallic functional layer, in particular based on silver or metal alloy containing silver and at least two antireflection coatings, said antireflection coatings each comprising at least one dielectric layer, said functional layer being placed between the two antireflection coatings.

In this type of stack, the single, or each, metallic functional layer is thus disposed between two antireflection coatings each generally comprising several layers which are each made of a dielectric material of the nitride type, and in particular silicon nitride or aluminum, or oxide. From the optical point of view, the purpose of these coatings which frame the or each metallic functional layer is to "anti-reflect" this metallic functional layer.

It is known from European patent application No. EP 718 250 a prior configuration in which on the one hand a layer based on zinc oxide is located just under and in contact with the metallic functional layer, in the direction of the substrate, then a layer based on silicon nitride under and in contact with this layer based on zinc oxide and in which on the other hand a layer based on zinc oxide is located above, opposite the substrate , then a dielectric layer, for example based on silicon nitride, is located on and in contact with this layer based on zinc oxide.

This document teaches in particular that the material comprising this stack of thin layers and the substrate on one side of which it is located can undergo a stressing heat treatment, of the bending, quenching or annealing type, which leads to a structural modification of the substrate without degrading the optical and thermal properties of the stack.

It is also known from international patent application No. WO 2010/142926 to apply a treatment by radiation after the deposition of a stack comprising a functional layer to reduce the emissivity or improve the optical properties of this stack, in providing in particular an absorbent layer as the terminal layer of the stack. The use of an absorbent terminal layer makes it possible to increase the absorption of radiation by the stack and to reduce the power required for treatment. As the terminal layer oxidizes during treatment and becomes transparent, the optical characteristics of the stack after treatment are interesting (high light transmission can in particular be obtained).

Unlike the heat treatment mentioned above, this radiation treatment of the stack does not structurally modify the substrate.

The invention is based on the discovery of a particular configuration of layers surrounding a metallic functional layer which makes it possible to reduce the resistance per square at an identical functional layer thickness, or even to reduce the thickness of the functional layer to obtain improved thermal properties, and this after a heat treatment of the material or a radiation treatment of the stack according to known techniques.

An object of the invention is thus to succeed in developing a new type of stack of layers with one or more functional layers, a stack which has, after heat treatment of the material or treatment of the stack by radiation, a low resistance per square (and therefore a low emissivity), a high light transmission, as well as a homogeneity of appearance, both in transmission and in reflection.

In the particular configuration according to the invention, it is proposed on the one hand to place a very thin layer of zinc-based oxide just under and in contact with the metallic functional layer, in the direction of the substrate, then to place, in direction of the substrate, a layer of titanium-based oxide under and in contact with this very thin layer of zinc-based oxide and on the other hand to place a thin layer of zinc-based oxide just above of the metallic functional layer, opposite the substrate, then placing a dielectric layer, for example of silicon-based or silicon-zirconium-based nitride, on (in contact or not) this thin layer of oxide at zinc base.

The subject of the invention is thus, in its broadest sense, a material comprising a substrate coated on one side with a stack of thin layers with reflection properties in the infrared and/or in solar radiation comprising at least one metallic functional layer, in particular based on silver or on a metal alloy containing silver and at least two antireflection coatings, the said antireflection coatings each comprising at least one dielectric layer, the said functional layer being placed between the two antireflection coatings, said material being remarkable:
- on the one hand in that said underlying anti-reflective coating, located under said functional layer in the direction of said substrate, comprises:
- a zinc-based oxide, ZnO, sub-layer which is located under and in contact with said functional layer, with a physical thickness of said zinc-based oxide, ZnO, sub-layer which is between 0.3 and 5.0 nm, even between 0.3 and 2.9 nm, even between 0.5 and 2.4 nm, even between 1.0 and 3.0 nm, even between 1.5 and 2.4 nm; And
- a titanium-based oxide dielectric underlayer, TiO_x, which is located under and in contact with said ZnO zinc-based oxide sub-layer, with a physical thickness of said TiO titanium-based oxide sub-layer_xwhich is between 5.0 and 50.0 nm, or even between 5.0 and 40.0 nm, or even between 12.0 and 33.0 nm;
- on the other hand in that said overlying anti-reflective coating, located above said functional layer opposite said substrate, comprises:
- an overlayer of zinc-based oxide, ZnO, with a physical thickness of said overlayer of zinc-based oxide ZnO which is between 2.0 and 10.0 nm, or even between 2.0 and 8.0 nm, or even between 2.5 and 5.4 nm; And
- a dielectric overlayer which is located on said overlayer of zinc-based oxide ZnO, and preferably a dielectric overlayer of nitride based on silicon, Si₃NOT₄;
- and further in that an overblocking layer of titanium-based oxide TiO_xis located over and in contact with said functional layer and under said overlying anti-reflective coating, with a physical thickness of said TiO titanium-based oxide blocking layer_xwhich is between 0.3 and 5.0 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm.

Said zinc-based oxide sub-layer is the very thin layer mentioned above: it has a thickness corresponding at least to a mono-molecular layer of Zn ₁ O ₁ and a maximum thickness of only a few nanometers. In this layer, the zinc oxide is preferably neither under-stoichiometric nor over-stoichiometric, in order to present the lowest possible absorption coefficient in the visible range.

Said zinc-based oxide sub-layer, ZnO, which is located under and in contact with said functional layer, may in particular have a physical thickness which is between 0.3 and 4.9 nm, or even between 0. 3 and 3.9 nm, or even between 0.3 and 2.9 nm; it may moreover have a physical thickness which is between 1.0 and 4.9 nm, or even between 1.0 and 3.9 nm, or even between 1.0 and 2.9 nm.

Said dielectric sub-layer of titanium-based oxide, TiO _x , can have a physical thickness which is between 5.0 and 30.0 nm, even between 5.0 and 20.0 nm, even between 7.0 and 17.0 nm, or else 10.0 and 50.0 nm, or even between 10.0 and 40.0 nm, even between 15.0 and 33.0 nm.

Said TiO _x titanium-based oxide overblocking layer may in particular have a physical thickness which is between 0.3 and 4.9 nm, or even between 0.3 and 3.9 nm, or even between 0.3 and 2.9nm; it may moreover have a physical thickness which is between 1.0 and 4.9 nm, or even between 1.0 and 3.9 nm, or even between 1.0 and 2.9 nm.

Said stack may comprise a single metallic functional layer or may comprise two metallic functional layers, or three metallic functional layers, or four metallic functional layers; the metallic functional layers in question here are continuous layers.

Preferably, when the stack comprises several metal functional layers, at least the first functional layer, the closest to the substrate, and more preferably each functional layer, is according to the previous indication, with:
- on the one hand said underlying anti-reflective coating, located under and in contact with each functional layer which comprises, towards said substrate:
- a zinc-based oxide, ZnO, sub-layer which is located under and in contact with said functional layer, with a physical thickness of said zinc-based oxide, ZnO, sub-layer which is between 0.3 and 5.0 nm, even between 0.3 and 2.9 nm, even between 0.5 and 2.4 nm, even between 1.0 and 3.0 nm, even between 1.5 and 2.4 nm; And
-- a titanium-based oxide dielectric underlayer, TiO_xwhich is located under and in contact with said zinc-based oxide, ZnO, sub-layer with a physical thickness of said titanium-based oxide, TiO, dielectric sub-layer_xwhich is between 5.0 and 50.0 nm, or even between 5.0 and 40.0 nm, or even between 12.0 and 33.0 nm;
- on the other hand, said overlying anti-reflective coating, located above and in contact with each functional layer, which comprises, opposite said substrate:
- an overlayer of zinc-based oxide, ZnO, with a physical thickness of said overlayer of zinc-based oxide ZnO which is between 2.0 and 10.0 nm, or even between 2.0 and 8.0 nm, or even between 2.5 and 5.4 nm; And
- a dielectric overlayer which is located on said overlayer of zinc-based oxide ZnO, and preferably a dielectric overlayer of nitride based on silicon, Si₃NOT₄;
- and in addition an overblocking layer of titanium-based oxide TiO_xwhich is located on and in contact with each functional layer and under each overlying anti-reflective coating, with a physical thickness of each TiO titanium-based oxide blocking layer_xwhich is between 0.3 and 5.0 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm.

For a stack with several metal functional layers, each antireflection coating located between two metal functional layers comprises both an overlying antireflection part, with respect to the functional layer located below and both an underlying antireflection part, for to the functional layer above.

Said metallic functional layer, or each metallic functional, preferably has a physical thickness which is between 6.5 and 22.0 nm, or even between 9.0 and 16.0 nm, or even between 9.5 and 12.4 nm .

A metallic functional layer comprises, preferably, predominantly, at least 50% in atomic percentage, at least one of the metals chosen from the list: Ag, Au, Cu, Pt; one, several, or each, metallic functional layer is preferably silver.

By "metallic layer" within the meaning of the present invention, it should be understood that the layer does not contain oxygen or nitrogen.

As usual, by "dielectric layer" within the meaning of the present invention, it should be understood that from the point of view of its nature, the layer is "non-metallic", that is to say that it comprises oxygen or nitrogen, or both. In the context of the invention, this term means that the material of this layer has an n/k ratio over the entire visible wavelength range (from 380 nm to 780 nm) equal to or greater than 5.

It is recalled that n designates the real refractive index of the material at a given wavelength and the coefficient k represents the imaginary part of the refractive index at a given wavelength, or absorption coefficient; the ratio n/k being calculated at a given wavelength identical for n and for k.

By "in contact" is meant in the sense of the invention that no layer is interposed between the two layers considered.

By "based on" is meant within the meaning of the invention that for the composition of this layer, the reactive elements oxygen, or nitrogen, or both if they are both present, are not considered and the element non-reactive (eg silicon or zinc or titanium) which is indicated as constituting the base, is present at more than 85 atomic % of the total of the non-reactive elements in the layer. This expression thus includes what is commonly referred to in the technique under consideration as "doping", whereas the doping element, or each doping element, may be present in a quantity ranging up to 10 atomic %, but without the total dopant does not exceed 15 atomic % of the non-reactive elements. This notion of “based on” also refers to a complete composition, “made up” of the reactive element or reactive elements, that is to say “in”.

In a particular variant, said underlying antireflection coating, located under said functional layer, and/or said overlying antireflection coating, located above said functional layer, does not comprise any layer in the metallic state. Indeed, it is not desired that such a layer can react, and in particular oxidize, during the treatment.

In a particular variant, said underlying antireflection coating, located under said functional layer, and/or said overlying antireflection coating, located above said functional layer, does not comprise any absorbing layer; By "absorbing layer" within the meaning of the present invention, it should be understood that the layer is a material having an average coefficient k, over the entire visible wavelength range (from 380 nm to 780 nm), greater than 0 .5 and having an electrical resistivity in the bulk state (as known in the literature) which is greater than 10 ^-5 Ω.cm. Indeed, it is not desired for such a layer to be able to react, and in particular to oxidize, during the treatment.

It is all the more surprising to achieve the properties targeted by the invention for these two previous variants because similar properties are sometimes obtained in the prior art with these two previous variants.

Preferably, said TiO _x titanium-based oxide dielectric sub-layer does not contain nitrogen. It may be in TiO ₂ .

Preferably, said underlying anti-reflective coating comprises a primary dielectric sub-layer of Si ₃ N ₄ silicon nitride which is located under and in contact with said TiO _x titanium-based oxide sub-layer, with a physical thickness of said Si ₃ N ₄ silicon nitride primary dielectric sublayer which is between 5.0 and 50.0 nm, or even between 10.0 and 40.0 nm, or even between 15.0 and 20 .0 nm.

Preferably moreover, said underlying anti-reflective coating comprises a primary dielectric sub-layer of nitride based on silicon-zirconium Si _x N _y Zr _Z which is located under and in contact with said sub-layer of oxide based on titanium TiO _x , with a physical thickness of said primary dielectric sub-layer of silicon-zirconium nitride Si _x N _y Zr _Z which is between 5.0 and 50.0 nm, or even between 10.0 and 40, 0 nm, or even between 15.0 and 20.0 nm.

Said ZnO zinc-based oxide underlayer and/or said ZnO zinc-based oxide overlayer is preferably made of aluminum-doped ZnO zinc oxide, i.e. that it contains no other element than Zn, Al and O.

In a specific variant, said underlying anti-reflective coating, located under said functional layer, further comprises an intermediate dielectric sub-layer located between said Si ₃ N ₄ silicon nitride dielectric sub-layer and said face, this sub-layer intermediate dielectric layer being oxidized (that is to say comprising oxygen) and preferably comprising: a titanium oxide TiO _x or a mixed oxide of zinc and tin.

In a specific variant, said overlying anti-reflective coating, located above said functional layer, further comprises a dielectric intermediate overlayer located between said ZnO zinc-based oxide overlayer and said dielectric overlayer, this dielectric intermediate overlayer being oxidized and preferably comprising: a titanium oxide TiO _x or a mixed oxide of zinc and tin.

Said dielectric overlayer which is located on said ZnO zinc-based oxide overlayer, and which is preferably a silicon-based nitride dielectric overlayer, Si ₃ N ₄ can have a thickness of between 5.0 and 50.0 nm, or even between 10.0 and 45.0 nm, or even between 25.0 and 45.0 nm.

The present invention also relates to multiple glazing comprising a material according to the invention, and at least one other substrate, the substrates being held together by a frame structure, said glazing providing a separation between an exterior space and an interior space. , wherein at least one spacer gas layer is disposed between the two substrates.

Each substrate can be clear or colored. One of the substrates at least in particular can be made of glass colored in the mass. The choice of the type of coloring will depend on the level of light transmission and/or the colorimetric appearance sought for the glazing once its manufacture is complete.

A substrate of the glazing, in particular the carrier substrate of the stack, can be curved and/or tempered after the deposition of the stack. It is preferable in a multiple glazing configuration for the stack to be arranged so as to be turned towards the side of the spacer gas layer.

The glazing may also be triple glazing consisting of three sheets of glass separated two by two by a gas layer. In a triple glazing structure, the carrier substrate of the stack can be on face 2 and/or face 5, when it is considered that the incident direction of the sunlight passes through the faces in increasing order of their number. .

The present invention also relates to a process for obtaining, or manufacturing, a material comprising a substrate coated on one side with a stack of thin layers with reflection properties in the infrared and/or in the radiation. lens comprising at least one metallic functional layer, in particular based on silver or on a metallic alloy containing silver, and two antireflection coatings, the said antireflection coatings each comprising at least one dielectric layer, the said functional layer being placed between the two anti-reflective coatings, said method comprising the following steps, in order:
- the deposition on one face of said substrate of a stack of thin layers with reflection properties in the infrared and/or in solar radiation comprising at least one metallic functional layer, in particular based on silver or on a metallic alloy containing silver and at least two antireflection coatings, in order to form a material according to the invention, then
- the treatment of said stack of thin layers using a source producing radiation and in particular infrared radiation, in order to treat the stack of thin layers as such.

Said treatment is preferably carried out in an atmosphere not comprising oxygen.

Said ZnO zinc-based oxide underlayer is preferably deposited from a ceramic target comprising ZnO and in an atmosphere comprising no oxygen or comprising at most 10.0% oxygen.

The details and advantageous characteristics of the invention emerge from the following non-limiting examples, illustrated using the attached figures:
- [Fig. 1] illustrates a structure of a functional monolayer stack according to the invention, the functional layer being deposited directly on a ZnO zinc-based oxide sub-layer and directly under a ZnO zinc-based oxide sub-layer , the stack being illustrated during processing with a source producing radiation;
- [Fig. 2] illustrates a structure of a functional bilayer stack according to the invention, each functional layer being deposited directly on a ZnO zinc-based oxide sub-layer and directly under a ZnO zinc-based oxide sub-layer , the stack being illustrated during processing with a source producing radiation;
- [Fig. 3] illustrates double glazing incorporating a stack according to the invention;
- [Fig. 4] illustrates triple glazing incorporating two stacks according to the invention;
- [Fig. 5] and [Fig. 6] illustrate the resistance per square R, in ohms per square, of the stacks of a first series of examples, respectively before and after laser treatment, as a function of the thickness of an oxide sub-layer based on zinc ZnO 129;
- [Fig. 7] and [Fig. 8] illustrate the solar factor of a second series of examples as a function of the thickness of a ZnO 129 zinc-based oxide underlayer after laser treatment; And
- [Fig. 9] and [Fig. 10] illustrate the solar factor of a third series of examples as a function of the thickness of a ZnO 129 zinc-based oxide underlayer after laser treatment.

In FIGS. 1 to 4, the proportions between the thicknesses of the various layers or of the various elements are not strictly observed in order to facilitate their reading.

FIG. 1 illustrates a structure of a functional single-layer stack 14 according to the invention deposited on a face 29 of a transparent glass substrate 30, in which the single functional layer 140, in particular based on silver or an alloy metal containing silver, is disposed between two antireflection coatings, the underlying antireflection coating 120 located below the functional layer 140 in the direction of the substrate 30 and the overlying antireflection coating 160 disposed above the functional layer 140 opposite the substrate 30. These two antireflection coatings 120, 160 each comprise at least one dielectric layer 125, 127, 129; 161, 163, 165. In figure 1:
- on the one hand the anti-reflective coating 120 located under the functional layer 140 in the direction of the substrate 30 comprises:
- an underlayer of zinc-based oxide, ZnO 129 which is located under and in contact with the functional layer 140, with a physical thickness of the underlayer based on zinc oxide ZnO 129 which is between 0 .3 and 5.0 nm, even between 0.3 and 2.9 nm, even between 0.5 and 2.4 nm, even between 1.0 and 3.0 nm, even between 1.5 and 2.4 nm; And
- a titanium-based oxide dielectric underlayer, TiO_x127 which is located under and in contact with the zinc-based oxide sublayer, ZnO 129, with a physical thickness of the titanium-based oxide TiO dielectric sublayer_x127 which is between 5.0 and 50.0 nm, or even between 5.0 and 40.0 nm, or even between 12.0 and 33.0 nm; it may be between 10.0 and 50.0 nm, or even between 10.0 and 40.0 nm, or even between 15.0 and 33.0 nm;
- And on the other hand the antireflection coating 160 located above the functional layer 140 opposite the substrate 30 comprises:
- an overlayer of zinc-based oxide, ZnO 161, with a physical thickness of the overlayer of zinc-based oxide, ZnO 161 which is between 2.0 and 10.0 nm, or even between 2.0 and 8.0 nm, or even between 2.5 and 5.4 nm; And
- a dielectric overlayer 165 which is located on the overlayer of zinc-based oxide, ZnO 161 and, preferably, a dielectric overlayer of silicon-based nitride, Si₃NOT₄ ;
- additionally with an overblocking layer of titanium-based oxide TiO_x150 which is located on and in contact with the functional layer 140 and under the overlying anti-reflective coating 160, with a physical thickness of the titanium-based oxide blocking layer TiO_x150 which is between 0.3 and 5.0 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm.

FIG. 2 illustrates a structure of a functional bilayer stack 14 according to the invention deposited on a face 29 of a transparent glass substrate 30, in which the functional layers 140, 180, in particular based on silver or metal alloy containing silver, are arranged between two antireflection coatings, the underlying antireflection coating 120 located below the functional layer 140 closest to the face 29 of the substrate 30, the intermediate antireflection coating 160 is located between the two functional layers and the overlying antireflection coating 200 placed above the functional layer 180 furthest from the face 29 of the substrate 30. These three antireflection coatings 120, 160, 200 each comprise at least one dielectric layer 125, 127 , 129; 161, 165, 167, 169; 201, 205. In figure 2:
- on the one hand the antireflection coating located under and in contact with each functional layer 140, 180, comprises, in the direction of the substrate:
- a zinc-based oxide ZnO, 129, 169 underlayer, which is located under and in contact with the functional layer, with a physical thickness of the zinc oxide-based ZnO underlayer which is comprised between 0.3 and 5.0 nm, even between 0.3 and 2.9 nm, even between 0.5 and 2.4 nm, even between 1.0 and 3.0 nm, even between 1.5 and 2 .4 nm;
- a TiO _x titanium-based oxide dielectric underlayer, 127, 167, which is located under and in contact with the ZnO zinc-based oxide underlayer, respectively 129, 169, with a physical thickness the TiO _x titanium-based oxide sub-layer which is between 5.0 and 50.0 nm, or even between 5.0 and 40.0 nm, or even between 12.0 and 33.0 nm; it may be between 10.0 and 50.0 nm, or even between 10.0 and 40.0 nm, or even between 15.0 and 33.0 nm; And
- a primary dielectric sub-layer of nitride based on silicon Si ₃ N ₄ 125, 165, which is located under and in contact with the sub-layer of oxide based on titanium TiO _x , respectively 127, 167, with a physical thickness of the primary dielectric sublayer of Si ₃ N ₄ silicon nitride which is between 5.0 and 50.0 nm, even between 10.0 and 40.0 nm, even between 15.0 and 20 .0 nm;
- on the other hand, the anti-reflective coating located above and in contact with each functional layer comprises, opposite the substrate:
- an overlayer of zinc-based oxide ZnO 161, 201, with a physical thickness of the overlayer of zinc-based oxide ZnO which is between 2.0 and 10.0 nm, or even between 2.0 and 8 .0 nm, or even between 2.5 and 5.4 nm; And
- A dielectric overlayer 205, which is located on the ZnO zinc-based oxide overlayer 201, and preferably this dielectric overlayer is of silicon-based nitride, Si ₃ N ₄ ;
- further with a 150, 190 TiO _x titanium-based oxide overblocking layer which is located over and in contact with each functional layer 140, 180 and under each overlying anti-reflective coating 160, 200, with a physical thickness of the titanium-based oxide blocking layer TiO _x 150, 190 which is between 0.3 and 5.0 nm, even between 0.3 and 2.9 nm, even between 0.5 and 2.4 n.

The functional layer 140 is located directly on the underlying anti-reflective coating 120 and indirectly under the overlying anti-reflective coating 160, 200: there is no sub-blocking coating located between the underlying anti-reflective coating 120 and the functional layer 140 but there is an overblocking coating located between the functional layer 140 and the anti-reflective coating 160, here comprising the overblocking layer of titanium-based oxide TiO _x 150, 190. the same is preferred for the other functional layers that may be present: each is in direct contact with the antireflection coating located directly below and an overblocking layer is interposed between it and the antireflection coating located above.

The anti-reflective coating 160 located above the single metal functional layer in FIG. 1 (or which is located above the metal functional layer farthest from the substrate when there are several metal functional layers) can terminate by a terminal protective layer (not shown), called "overcoat" in English, which is the layer of the stack which is furthest from the face 29.

The anti-reflective coating 120 may comprise a primary dielectric sub-layer of silicon nitride base Si ₃ N ₄ 125 which is located under and in contact with the sub-layer of titanium base oxide TiO _x 127, with a physical thickness the primary dielectric sub-layer of Si ₃ N ₄ 125 silicon nitride which is between 5.0 and 50.0 nm, even between 10.0 and 40.0 nm, even between 15.0 and 20, 0nm

The anti-reflective coating 120 may include a primary dielectric sub-layer of silicon-zirconium nitride Si _x N _y Zr _Z 125 'which is located under and in contact with the sub-layer of titanium-based oxide TiO _x 127 , with a physical thickness of the primary dielectric sublayer of silicon-zirconium nitride Si _x N _y Zr _Z 125' which is between 5.0 and 50.0 nm, or even between 10.0 and 40.0 nm, or even between 15.0 and 20.0 nm.

The antireflection coating 120 may also comprise a primary dielectric sub-layer of nitride which is on part of its thickness based on silicon-zirconium Si _x N _y Zr _Z and on another part of its thickness based on silicon Si ₃ No. ₄ .

Such a stack of thin layers can be used in a multiple glazing 100 creating a separation between an exterior space ES and an interior space IS; this glazing may have a structure:
- double glazing, as illustrated in Figure 3: this glazing then consists of two substrates 10, 30 which are held together by a frame structure 90 and which are separated from each other by an intermediate gas layer 15 ; Or
- triple glazing, as illustrated in Figure 4: this glazing then consists of three substrates 10, 20, 30, separated two by two by an intermediate gas layer 15, 25, the whole being held together by a frame structure 90 .

In Figures 3 and 4, the incident direction of sunlight entering the building is shown by the double arrow to the left.

In FIG. 3, the stack 14 of thin layers can be positioned on face 3 (on the innermost sheet of the building considering the incident direction of the sunlight entering the building and on its face facing the blade gas), that is to say on an inner face 29 of the substrate 30 in contact with the spacer gas layer 15, the other face 31 of the substrate 30 being in contact with the inner space IS.

However, it can also be envisaged that in this double glazing structure, one of the substrates has a laminated structure.

In figure 4, there are two stacks of thin layers, preferably identical:
- a stack 14 of thin layers is positioned on face 2 (on the outermost sheet of the building considering the incident direction of the sunlight entering the building and on its face facing the gas layer), c that is to say on an inner face 11 of the substrate 10 in contact with the intermediate gas layer 15, the other face 9 of the substrate 10 being in contact with the outer space ES;
- and a stack 26 of thin layers is positioned on face 5 (on the innermost sheet of the building considering the incident direction of the sunlight entering the building and on its face facing the gas layer), that is to say on an inner face 29 of the substrate 30 in contact with the spacer gas layer 25, the other face 31 of the substrate 30 being in contact with the inner space IS.

A first series of examples was produced on the basis of the stacking structure illustrated in FIG. 1 with, starting from surface 29, only the following layers, in this order:
- a primary dielectric sub-layer of nitride based on silicon Si₃NOT₄125 with a physical thickness of 10 nm, deposited from an aluminum doped silicon target, 92% by weight silicon and 8% by weight aluminum in a 45% nitrogen atmosphere on the total of nitrogen and argon and under a pressure of 1.5.10^-3mbar;
- a titanium-based oxide dielectric underlayer, TiO_x127 with a physical thickness of 10.0 nm, deposited from a titanium dioxide target in an atmosphere of 5% oxygen to total oxygen and argon and at a pressure of 2.10^-3mbar;
- a zinc-based oxide underlayer, ZnO 129, with a variable physical thickness, from 1.0 nm to 8.0 nm, deposited from a ceramic target consisting of 49 atomic % zinc and 49 atomic % oxygen and doped with 2% aluminum, in an argon atmosphere and under a pressure of 2.10^-3mbar;
- a metallic functional layer 140 based on silver, and more precisely here on silver, with a physical thickness of 12.0 nm, deposited from a silver metallic target, in an argon atmosphere and under a pressure of 2.10^-3mbar;
- an oxide overblocking layer based on titanium TiO_x150 which is located on and in contact with the functional layer 140, with a physical thickness of 1.0 nm, deposited from a titanium dioxide target in an atmosphere of 5% oxygen over the total of oxygen and argon and under a pressure of 2.10^-3mbar;
- an overlayer of zinc-based oxide ZnO 161, with a physical thickness of 5.0 nm, deposited from a ceramic target consisting of 49 atomic % zinc and 49 atomic % oxygen and doped with aluminum at 2%, in an argon atmosphere and under a pressure of 2.10^-3mbar;
- a dielectric overlayer 165 of nitride based on silicon Si₃NOT₄, with a physical thickness of 30.0 nm, deposited from an aluminum doped silicon target, 92% by weight silicon and 8% by weight aluminum in a 45% aluminum atmosphere nitrogen over the total of nitrogen and argon and under a pressure of 2.10^-3mbar.

The square resistance R of this stack as a function of the thickness of the ZnO 129 zinc-based oxide underlayer without any heat treatment is shown in Figure 5.

These examples of the first series then underwent a laser treatment consisting here of a scrolling of the substrate 30 at a speed of 4 m/min under a laser line 20 of 0.08 mm wide, 11.6 mm long and total power of 433 W with the laser line oriented perpendicular to the face 29 and in the direction of the stack 14, that is to say by arranging the laser line above the stack, as visible in Figure 1 ( the right black arrow illustrating the orientation of the emitted light).

The resistance per square R of these stacks after this treatment is illustrated in figure 6.

It has thus been observed that the square resistance of the stacks with the titanium-based oxide TiO _x 127 dielectric sub-layer and the very thin ZnO 129 zinc-based oxide sub-layer, between 0.3 and 5.0 nm, and preferably between 0.3 and 4.9 nm, or even between 0.3 and 3.9 nm was surprisingly good with laser treatment.

Such a situation makes it possible in a first approach to increase the solar factor at constant functional layer thickness, or even in a second approach to reduce the thickness of the functional layer to increase the solar factor even more without modifying the square resistance previously obtained. .

To confirm this effect, a second series of examples was carried out on the basis of the stacking structure illustrated in FIG. 1 with, starting from surface 29, only the following layers, in this order:
- a TiO _x 127 titanium-based oxide dielectric underlayer with a physical thickness varying between about 26.5 nm and about 21.6 nm, deposited from a titanium dioxide target in an atmosphere at 5% oxygen on the total of oxygen and argon and under a pressure of 2.10 ^-3 mbar;
- a ZnO 129 zinc-based oxide underlayer, with a variable physical thickness, from 1.0 nm to 6.0 nm, deposited from a ceramic target consisting of 49 atomic % zinc and 49 atomic % of oxygen and doped with aluminum at 2%, in an argon atmosphere and under a pressure of 2.10 ^-3 mbar;
- a metallic functional layer 140 based on silver, and even precisely here on silver, with a physical thickness of 15 nm, deposited from a silver metallic target, in an argon atmosphere and under a pressure of 2.10 ^-3 mbar;
- a TiO _x 150 titanium-based oxide overblocking layer which is located on and in contact with the functional layer 140, with a physical thickness of 1.0 nm, deposited from a titanium dioxide target in an atmosphere containing 5% oxygen on the total of oxygen and argon and under a pressure of 2.10 ^-3 mbar;
- an overlayer based on zinc oxide ZnO 161, with a physical thickness of 5 nm, deposited from a ceramic target consisting of 49 atomic % zinc and 49 atomic % oxygen and doped with aluminum at 2%, in an argon atmosphere and under a pressure of 2.10 ^-3 mbar;
- a dielectric overlayer 163 comprising titanium dioxide TiO ₂ , with a physical thickness varying between about 10.2 nm and about 10.7 nm, deposited from a titanium dioxide target in an atmosphere at 10% d oxygen on the total of oxygen and argon and under a pressure of 2.10 ^-3 mbar; And
- a dielectric overlayer 165 of nitride based on silicon Si ₃ N ₄ , with a physical thickness varying between about 24.7 nm and about 25.1 nm, deposited from a silicon target doped with aluminum, at 92% by weight of silicon and 8% by weight of aluminum in an atmosphere of 45% nitrogen on the total of nitrogen and argon and under a pressure of 2.10 ^-3 mbar.

All these examples of the second series were the subject of the same laser treatment as before, then were mounted in double glazing in a structure of the type illustrated in Figure 3. These examples are a configuration : 4-16 (Ar 90%)-4-16, i.e. it consists of two sheets of 4 mm transparent glass, each producing a substrate 10, 30, separated by a gas layer intermediate 15 to 90% argon and 10% air with a thickness of 16 mm, all held together by a frame structure 90.

The inner substrate 30 of this double glazing is coated on its inner face 29 facing the intermediate gas layer 15, with an insulating coating 14 consisting of the functional single-layer stack described above: the functional single-layer stack is thus in side called “side 3”.

The table in Figure 7 summarizes the exact thickness of the layers 127, 129, 163 and 165, in nm, for the six examples of ZnO 129 zinc-based oxide underlayer, with a physical thickness varying from 1 .0nm to 6.0nm.

The last row of the table in Figure 7, as well as Figure 8 illustrate the evolution along the ordinate of the solar factor, g, in percent, as a function of the thickness, t ₁₂₉ , in nanometers of this oxide sub-layer based on zinc ZnO 129 on the abscissa, this solar factor being measured immediately after the laser treatment of the two substrates 10, 30, then their integration to form the double glazing. The solar factor is thus improved when the ZnO 129 zinc-based oxide underlayer is between 0.3 and 5.0 nm. The solar factor is increased here, in double glazing configuration, by 1.0% by decreasing the thickness of the ZnO 129 zinc-based oxide underlayer from 6.0 nm to 1.0 nm. The solar factor is particularly favorable for a ZnO 129 zinc-based oxide underlayer thickness between 1.0 and 3.0 nm, or even between 1.5 and 2.4 nm.

A third series of examples was then produced on the basis of the stacking structure illustrated in FIG. 1 with, starting from surface 29, only the following layers, in this order:
- a TiO _x 127 titanium-based oxide dielectric underlayer with a physical thickness varying between about 32.2 nm and about 28.2 nm, deposited from a titanium dioxide target in an atmosphere at 5% oxygen on the total of oxygen and argon and under a pressure of 2.10 ^-3 mbar 4;
- a ZnO 129 zinc-based oxide underlayer, with a variable physical thickness, from 1.0 nm to 6.0 nm, deposited from a ceramic target consisting of 49 atomic % zinc and 49 atomic % of oxygen and doped with aluminum at 2%, in an argon atmosphere and under a pressure of 2.10 ^-3 mbar;
- a metallic functional layer 140 based on silver, and even precisely here on silver, with a physical thickness of 10 nm, deposited from a silver metallic target, in an argon atmosphere and under a pressure of 2.10 ^-3 mbar;
- a TiO _x 150 titanium-based oxide overblocking layer which is located on and in contact with the functional layer 140, with a physical thickness of 1.0 nm, deposited from a titanium dioxide target in an atmosphere containing 5% oxygen on the total of oxygen and argon and under a pressure of 2.10 ^-3 mbar;
- an overlayer based on zinc oxide ZnO 161, with a physical thickness of 5 nm, deposited from a ceramic target consisting of 49 atomic % zinc and 49 atomic % oxygen and doped with aluminum at 2%, in an argon atmosphere and under a pressure of 2.10 ^-3 mbar;
- a dielectric overlayer 163 comprising titanium dioxide TiO ₂ , with a physical thickness varying between about 5.7 nm and about 5.0 nm, deposited from a titanium dioxide target in an atmosphere at 10% d oxygen on the total of oxygen and argon and under a pressure of 2.10 ^-3 mbar; And
- a dielectric overlayer 165 of nitride based on silicon Si ₃ N ₄ , with a physical thickness varying between about 34.9 nm and about 32.8 nm, deposited from a silicon target doped with aluminum, at 92% by weight of silicon and 8% by weight of aluminum in an atmosphere of 45% nitrogen on the total of nitrogen and argon and under a pressure of 2.10 ^-3 mbar.

All these examples of the third series have been the subject of the same laser treatment as before, then have been mounted in triple glazing in a structure of the type illustrated in figure 4. For these examples, this is a configuration : 4-16 (Ar 90%)-4-16 (Ar 90%)-4, i.e. it is made up of three sheets of 4 mm transparent glass, each making a substrate 10, 20 , 30, separated two by two by an intermediate gas layer 15, 25 to 90% argon and 10% air with a thickness of 16 mm each, the whole being held together by a frame structure 90.

The two outer substrates 10, 30 of this triple glazing are each coated, on its inner face 11, 29 facing the intermediate gas layer 15, 25, with an insulating coating 14, 26 consisting of the functional monolayer stack described above: the functional single-layer stacks thus have faces called “face 2” and “face 5”).

The central substrate 20 of this triple glazing, the one whose two faces 19, 21 are in contact respectively with the intermediate gas blades 15 and 25, is not coated with any coating on any of these faces.

The table in Figure 9 summarizes the exact thickness of layers 125, 127, 129, 163 and 165, in nm, for the six examples of ZnO 129 zinc-based oxide underlayer, of varying physical thickness from 1.0 nm to 6.0 nm.

The last row of the table in Figure 9, as well as Figure 10 illustrate the evolution along the ordinate of the solar factor, g, in percent, as a function of the thickness, t ₁₂₉ , in nanometers of this oxide sub-layer based on zinc ZnO 129 on the abscissa, this solar factor being measured immediately after the laser treatment of the two substrates 10, 30, then their integration to form the triple glazing. The solar factor is thus improved when the ZnO 129 zinc-based oxide underlayer is between 0.3 and 5.0 nm. The solar factor is increased here, in the triple glazing configuration, by 0.4% by decreasing the thickness of the ZnO 129 zinc-based oxide underlayer from 6.0 nm to 1.0 nm. The solar factor is particularly favorable for a ZnO 129 zinc-based oxide underlayer thickness between 1.0 and 3.0 nm, or even between 1.5 and 2.4 nm.

The present invention is described in the foregoing by way of example. It is understood that the person skilled in the art is able to make different variants of the invention without departing from the scope of the patent as defined by the claims.

Claims (11)

Material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) with reflection properties in the infrared and/or in solar radiation comprising at least one metallic functional layer (140), in particular based on silver or on a metal alloy containing silver and at least two antireflection coatings (120, 160), said antireflection coatings each comprising at least one dielectric layer (127, 165), said functional layer (140 ) being placed between the two antireflection coatings (120, 160), characterized in that said underlying anti-reflective coating (120), located under said functional layer (140) towards said substrate (30), comprises:
- a zinc-based oxide, ZnO (129) underlayer which is located under and in contact with said functional layer (140), with a physical thickness of said zinc-based oxide, ZnO (129 ) which is between 0.3 and 5.0 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm; And
- a titanium-based oxide dielectric underlayer, TiO_x(127) which is located under and in contact with said ZnO (129) zinc base oxide sublayer with a physical thickness of said TiO titanium base oxide dielectric sublayer_x(127) which is between 5.0 and 50.0 nm, or even between 5.0 and 40.0 nm, or even between 12.0 and 33.0 nm;
in that said overlying anti-reflective coating (160), located above said functional layer (140) opposite said substrate (30), comprises:
- an overlayer of zinc-based oxide, ZnO (161), with a physical thickness of said overlayer of zinc-based oxide, ZnO (161) which is between 2.0 and 10.0 nm, or even between 2.0 and 8.0 nm, or even between 2.5 and 5.4 nm; And
- a dielectric overlayer (165) which is located on said overlayer of zinc-based oxide, ZnO (161) and, preferably a dielectric overlayer of silicon-nitride, Si₃NOT₄;
and in that an overblocking layer of titanium-based oxide TiO_x(150) is located over and in contact with said functional layer (140) and under said overlying anti-reflective coating (160), with a physical thickness of said TiO titanium-based oxide blocking layer_x(150) which is between 0.3 and 5.0 nm, or even between 0.3 and 2.9 nm, or even between 0.5 and 2.4 nm. Material according to Claim 1, in which the said metal functional layer (140), or each metal functional, has a physical thickness which is between 6.5 and 22.0 nm, even between 9.0 and 16.0 nm, even between 9.5 and 12.4 nm. Material according to claim 1 or 2, wherein said underlying anti-reflective coating (120) located below said metallic functional layer (140), and/or said overlying anti-reflective coating (160) located above said functional layer metallic (140), has no layer in the metallic state. Material according to any one of claims 1 to 3, wherein said underlying anti-reflective coating (120) comprises a primary Si ₃ N ₄ silicon nitride dielectric sub-layer (125) which is located under and in contact with said TiO _x (127) titanium base oxide sublayer, with a physical thickness of said Si ₃ N ₄ (125) silicon nitride primary dielectric sublayer which is between 5.0 and 50, 0 nm, even between 10.0 and 40.0 nm, even between 15.0 and 20.0 nm. Material according to any one of claims 1 to 4, wherein said underlying anti-reflective coating (120) comprises a primary dielectric sublayer of silicon-zirconium nitride Si _x N _y Zr _Z (125') which is located under and in contact with said TiO _x titanium oxide sublayer (127), with a physical thickness of said Si _x N _y Zr _Z silicon-zirconium nitride primary dielectric sublayer (125') which is between 5.0 and 50.0 nm, or even between 10.0 and 40.0 nm, or even between 15.0 and 20.0 nm. Material according to any one of claims 1 to 5, wherein said zinc oxide, ZnO (129) underlayer and/or zinc oxide, ZnO (161) overlayer consists of zinc ZnO doped with aluminium. A material according to any of claims 1 to 6, wherein said overlying anti-reflective coating (160) located above said functional layer (140) further comprises an intermediate dielectric overlayer (163) located between said overlayer of zinc-based oxide, ZnO (161) and said dielectric overlayer (165), this intermediate dielectric overlayer (163) being oxidized and preferably comprising: a titanium oxide TiO _x or a mixed oxide of zinc and tin. Multiple glazing comprising a material according to any one of claims 1 to 7, and at least one other substrate (10), the substrates (10, 30) being held together by a frame structure (90), said glazing forming a separation between an exterior space (ES) and an interior space (IS), in which at least one intermediate gas layer (15) is arranged between the two substrates. Process for obtaining a material comprising a substrate (30) coated on one face (29) with a stack of thin layers (14) with reflection properties in the infrared and/or in solar radiation comprising at least one metallic functional layer (140), in particular based on silver or on a metallic alloy containing silver and two antireflection coatings (120, 160), the said antireflection coatings each comprising at least one dielectric layer (127, 165), said functional layer (140) being disposed between the two anti-reflective coatings (120, 160), said method comprising the following steps, in order:
- the deposition on one side (29) of said substrate (30) of a stack of thin layers (14) with reflection properties in the infrared and/or in solar radiation comprising at least one metallic functional layer (140), in particular based on silver or a metal alloy containing silver and at least two antireflection coatings (120, 160), in order to form a material according to any one of claims 1 to 7, then
- the treatment of said stack of thin layers (14) using a source producing radiation and in particular infrared radiation. A method according to claim 9, wherein said treatment is carried out in an atmosphere not comprising oxygen. A method according to claim 9 or 10, wherein said zinc-based oxide, ZnO (129) underlayer is deposited from a ceramic target comprising ZnO and in an atmosphere containing no oxygen or comprising not more than 10.0% oxygen.