FR3100086B1 - Photodétecteur - Google Patents

Photodétecteur Download PDF

Info

Publication number
FR3100086B1
FR3100086B1 FR1909355A FR1909355A FR3100086B1 FR 3100086 B1 FR3100086 B1 FR 3100086B1 FR 1909355 A FR1909355 A FR 1909355A FR 1909355 A FR1909355 A FR 1909355A FR 3100086 B1 FR3100086 B1 FR 3100086B1
Authority
FR
France
Prior art keywords
photodetector
incident light
metal
semiconductor junction
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1909355A
Other languages
English (en)
Other versions
FR3100086A1 (fr
Inventor
Ching-Fuh Lin
Hung-Chieh Chuang
Meng-Jie Lin
Po-Jui Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Taiwan University NTU
Original Assignee
National Taiwan University NTU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Taiwan University NTU filed Critical National Taiwan University NTU
Priority to FR1909355A priority Critical patent/FR3100086B1/fr
Publication of FR3100086A1 publication Critical patent/FR3100086A1/fr
Application granted granted Critical
Publication of FR3100086B1 publication Critical patent/FR3100086B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

L’invention concerne un photodétecteur (1) comportant une jonction métal-semi-conducteur pour mesurer un rayonnement infrarouge. Dans un autre mode de réalisation, le photodétecteur (1) comprend des structures pour obtenir une résonance de plasmon de surface localisée au niveau de la jonction métal-semi-conducteur stimulée par une lumière incidente. Le photodétecteur (1) a par conséquent une réponse améliorée et une région de spectres à large bande pour une détection de photons. Le photodétecteur (1) peut être utilisé pour détecter des puissances variées de lumière incidente avec une longueur d’onde de une région du visible à l’infrarouge moyen (300 nm ~ 20 μm). Figure à publier avec l’abrégé : Figure 2
FR1909355A 2019-08-22 2019-08-22 Photodétecteur Active FR3100086B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1909355A FR3100086B1 (fr) 2019-08-22 2019-08-22 Photodétecteur

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1909355 2019-08-22
FR1909355A FR3100086B1 (fr) 2019-08-22 2019-08-22 Photodétecteur

Publications (2)

Publication Number Publication Date
FR3100086A1 FR3100086A1 (fr) 2021-02-26
FR3100086B1 true FR3100086B1 (fr) 2022-08-12

Family

ID=68654753

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1909355A Active FR3100086B1 (fr) 2019-08-22 2019-08-22 Photodétecteur

Country Status (1)

Country Link
FR (1) FR3100086B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117460269B (zh) * 2023-12-25 2024-03-19 苏州大学 一种双极性光电探测器及光加密通信系统、方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4242035C2 (de) * 1992-12-12 1996-07-11 Daimler Benz Aerospace Ag Schottky-Barrieren-Photodetektor
US20150228837A1 (en) * 2014-02-10 2015-08-13 National Taiwan University Photodetector and method of facricating the same
JP6918631B2 (ja) * 2017-08-18 2021-08-11 浜松ホトニクス株式会社 光検出素子

Also Published As

Publication number Publication date
FR3100086A1 (fr) 2021-02-26

Similar Documents

Publication Publication Date Title
US11585749B2 (en) Reference switch architectures for noncontact sensing of substances
US7671986B2 (en) Spectroscopy apparatus based on hetero-junction phototransistors
Dhar et al. A diffuse reflectance spectral imaging system for tumor margin assessment using custom annular photodiode arrays
FR3100086B1 (fr) Photodétecteur
TW201614201A (en) Determining spectral emission characteristics of incident radiation
TWI603067B (zh) 光學檢測裝置及方法
Drobyshev et al. An experimental study of the luminosity of an MFC− MAES-based digital spectrograph
Sahoo et al. Performance Evaluation of Remote Sensing-based High Frequent Streamflow Estimation Models at the Bramhani River Basin Outlet
Peřina Jr et al. Reconstruction of joint photon-number distributions of twin beams incorporating spatial noise reduction
Qi et al. Bridging a few terahertz to tens of terahertz: Inspection on a cost-effective, room-temperature operated measurement system based on frequency conversion via 4-dimethylamino-N′-methyl-4′-stilbazolium tosylate crystal
Yue et al. Breaking through the limitations of multiplexing based on Hadamard transform
Yardimci et al. High-sensitivity, broadband terahertz detectors based on plasmonic nano-antenna arrays
Communal Comparing camera sensitivity with noise equivalent irradiance
Wang et al. Single-pixel p-graded-n junction spectrometers
Ambrosi et al. Time resolving characteristics of HPK and FBK silicon photomultipliers for TOF and PET applications
RU2014103423A (ru) Способ измерения показателя преломления и дисперсии и устройство для его реализации
CN103698279B (zh) 一种测量单个纳米粒子光谱的方法
Zhou et al. Effect of micro-range transmission on the imaging sharpness of near-infrared upconversion thin-film silicon-based detectors
CN206583532U (zh) 光谱测试系统
CN109244822B (zh) 用于测量太赫兹量子级联激光器增益的器件及测量方法
Bai et al. Enhancement of the signal-to-noise ratio by compressing the illumination of a spatial heterodyne Raman spectrometer
RU2601537C1 (ru) Способ оценки качества гетероструктуры полупроводникового лазера
Patokoski et al. Broadband mid-infrared cavity ringdown spectroscopy with frequency upconversion detector
Zhang et al. Detection of∼ 1 atto-joule signal pulse at 532 nm using a picosecond collinear BBO optical parametric amplifier
Bonakdar et al. Detectivity of plasmonic enhanced photodetectors based on nondegenerate two-photon absorption process

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

EXTE Extension to a french territory

Extension state: PF

PLSC Publication of the preliminary search report

Effective date: 20210226

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5