FR3094567B1 - Procédé de fabrication bas coût d’un élément modulaire de commutation de puissance - Google Patents

Procédé de fabrication bas coût d’un élément modulaire de commutation de puissance Download PDF

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Publication number
FR3094567B1
FR3094567B1 FR1903229A FR1903229A FR3094567B1 FR 3094567 B1 FR3094567 B1 FR 3094567B1 FR 1903229 A FR1903229 A FR 1903229A FR 1903229 A FR1903229 A FR 1903229A FR 3094567 B1 FR3094567 B1 FR 3094567B1
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FR
France
Prior art keywords
switching element
power switching
modular power
low cost
bus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1903229A
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English (en)
Other versions
FR3094567A1 (fr
Inventor
Olivier Belnoue
Friedbald Kiel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elvia Pcb
Institut Vedecom
Original Assignee
Elvia Pcb
Institut Vedecom
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elvia Pcb, Institut Vedecom filed Critical Elvia Pcb
Priority to FR1903229A priority Critical patent/FR3094567B1/fr
Priority to PCT/FR2020/000067 priority patent/WO2020193876A1/fr
Publication of FR3094567A1 publication Critical patent/FR3094567A1/fr
Application granted granted Critical
Publication of FR3094567B1 publication Critical patent/FR3094567B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Fuses (AREA)

Abstract

PROCÉDÉ DE FABRICATION BAS COÛT D’UN ÉLÉMENT MODULAIRE DE COMMUTATION DE PUISSANCE Le procédé de l'invention Le procédé est conçu pour la fabrication d’un élément modulaire de commutation de puissance (MP) comprenant des premier et deuxième blocs stratifiés (BL, BH) entre lesquels est enserrée au moins une puce de transistor (CP1, CP2). Les premier et deuxième blocs stratifiés comportent respectivement des premier et deuxième bus-barres (BBL, BBH) sur lesquels sont stratifiées des couches internes diélectriques et conductrices. Le procédé comprend, préalablement à la stratification des premier et deuxième blocs stratifiés, la fabrication en parallèle d’une première ébauche du premier bloc stratifié (BL) et d’une deuxième ébauche du deuxième bloc stratifié (BH), cette fabrication en parallèle comprenant au moins une opération de poinçonnage et/ou matriçage à l’emporte-pièce réalisant au moins un orifice (OR1, OR2) dans le premier bus-barre et/ou le deuxième bus-barre, une réalisation d’une couche diélectrique (DL1, DL2) recouvrant l’intérieur de l’orifice et une métallisation (CU2, CU3) de l’intérieur de l’orifice incluant la couche diélectrique. Fig.2
FR1903229A 2019-03-28 2019-03-28 Procédé de fabrication bas coût d’un élément modulaire de commutation de puissance Active FR3094567B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1903229A FR3094567B1 (fr) 2019-03-28 2019-03-28 Procédé de fabrication bas coût d’un élément modulaire de commutation de puissance
PCT/FR2020/000067 WO2020193876A1 (fr) 2019-03-28 2020-03-25 Procédé de fabrication bas cout d'un élément modulaire de commutation de puissance

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1903229A FR3094567B1 (fr) 2019-03-28 2019-03-28 Procédé de fabrication bas coût d’un élément modulaire de commutation de puissance
FR1903229 2019-03-28

Publications (2)

Publication Number Publication Date
FR3094567A1 FR3094567A1 (fr) 2020-10-02
FR3094567B1 true FR3094567B1 (fr) 2021-05-21

Family

ID=67810736

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1903229A Active FR3094567B1 (fr) 2019-03-28 2019-03-28 Procédé de fabrication bas coût d’un élément modulaire de commutation de puissance

Country Status (2)

Country Link
FR (1) FR3094567B1 (fr)
WO (1) WO2020193876A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2789803B1 (fr) * 1999-02-12 2002-03-08 St Microelectronics Sa Procede de realisation d'une connexion metallique verticale dans un circuit integre
FR3060255B1 (fr) * 2016-12-12 2019-07-19 Institut Vedecom Procede d’integration de puces de puissance parallelisable et modules electroniques de puissance
FR3060846B1 (fr) * 2016-12-19 2019-05-24 Institut Vedecom Procede d’integration de puces de puissance et de bus barres formant dissipateurs thermiques
JP6972686B2 (ja) * 2017-06-15 2021-11-24 株式会社ジェイテクト 半導体装置

Also Published As

Publication number Publication date
WO2020193876A1 (fr) 2020-10-01
FR3094567A1 (fr) 2020-10-02

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