FR3083369B1 - Interconnexion monolithique de modules photovoltaiques - Google Patents

Interconnexion monolithique de modules photovoltaiques Download PDF

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Publication number
FR3083369B1
FR3083369B1 FR1855879A FR1855879A FR3083369B1 FR 3083369 B1 FR3083369 B1 FR 3083369B1 FR 1855879 A FR1855879 A FR 1855879A FR 1855879 A FR1855879 A FR 1855879A FR 3083369 B1 FR3083369 B1 FR 3083369B1
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FR
France
Prior art keywords
layer
tco
metal
transparent
isl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1855879A
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English (en)
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FR3083369A1 (fr
Inventor
Aurelien Duchatelet
Sebastien Jutteau
Pierre-Philippe Grand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electricite de France SA
Original Assignee
Electricite de France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electricite de France SA filed Critical Electricite de France SA
Priority to FR1855879A priority Critical patent/FR3083369B1/fr
Publication of FR3083369A1 publication Critical patent/FR3083369A1/fr
Application granted granted Critical
Publication of FR3083369B1 publication Critical patent/FR3083369B1/fr
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne une structure de cellules photovoltaïques interconnectées sur un même substrat, comportant un empilement de couches incluant une première couche de métal conducteur (M1), une couche conductrice transparente (TCO), et une couche active (Pile), à propriétés photovoltaïques, entre la première couche de métal (M1) et la couche transparente (TCO), ainsi qu'une deuxième couche de métal conducteur (M2), et une couche isolante (ISL) entre les première (M1) et deuxième (M2) couche de métal conducteur. La structure comporte en outre, pour une séparation en au moins deux cellules (Cel n, Cel n+1) et assurer des interconnexions entre les deux cellules, une première gravure (P1) à travers la première couche de métal (M1), la couche active (Pile) et la couche transparente (TCO), une deuxième gravure (P2) à travers la couche isolante (ISL) et une troisième gravure (P3) dans la deuxième couche métallique (M2). On réalise en outre au moins un trou (T) dans chaque cellule, à travers la couche active (Pile), la première couche de métal (M1) et la couche d'isolant (ISL), comblé par une excroissance de la deuxième couche métallique (M2) et/ou par une excroissance de la couche conductrice transparente (TCO) pour assurer un transfert de charges de la couche conductrice transparente (TCO) vers la deuxième couche de métal (M2).
FR1855879A 2018-06-28 2018-06-28 Interconnexion monolithique de modules photovoltaiques Active FR3083369B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1855879A FR3083369B1 (fr) 2018-06-28 2018-06-28 Interconnexion monolithique de modules photovoltaiques

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1855879A FR3083369B1 (fr) 2018-06-28 2018-06-28 Interconnexion monolithique de modules photovoltaiques
FR1855879 2018-06-28

Publications (2)

Publication Number Publication Date
FR3083369A1 FR3083369A1 (fr) 2020-01-03
FR3083369B1 true FR3083369B1 (fr) 2021-01-08

Family

ID=63722557

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1855879A Active FR3083369B1 (fr) 2018-06-28 2018-06-28 Interconnexion monolithique de modules photovoltaiques

Country Status (1)

Country Link
FR (1) FR3083369B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4309212B1 (fr) 2021-03-19 2025-05-07 First Solar, Inc Dispositifs photovoltaïques avec interconnexions de couche conductrices
CN113594301B (zh) * 2021-07-30 2023-06-16 成都中建材光电材料有限公司 一种降低太阳能电池串联电阻的方法及电池制备方法
EP4526931A4 (fr) * 2022-05-17 2025-09-03 Cnbm Res Institute For Advanced Glass Materials Group Co Ltd Pile de couches pour modules photovoltaïques à couches minces et son procédé de préparation
CN115411143B (zh) * 2022-09-01 2025-02-25 中国建材国际工程集团有限公司 一种大面积柔性cigs太阳电池及其制作方法
WO2025081109A1 (fr) * 2023-10-11 2025-04-17 First Solar, Inc. Dispositifs photovoltaïques à isolations intracellulaires et leurs procédés de formation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4981525A (en) * 1988-02-19 1991-01-01 Sanyo Electric Co., Ltd. Photovoltaic device
US20120048333A1 (en) * 2010-08-30 2012-03-01 Karpenko Oleh P Photovoltaic device interconnect
US20130133714A1 (en) * 2011-11-30 2013-05-30 Primestar Solar, Inc. Three Terminal Thin Film Photovoltaic Module and Their Methods of Manufacture
DE102015114135A1 (de) * 2015-08-26 2017-03-02 Calyxo Gmbh Photovoltaische Vorrichtung und Verfahren zur Herstellung einer photovoltaischen Vorrichtung

Also Published As

Publication number Publication date
FR3083369A1 (fr) 2020-01-03

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