FR3082662B1 - A method of manufacturing an optoelectronic device with self-aligned light confinement walls - Google Patents

A method of manufacturing an optoelectronic device with self-aligned light confinement walls Download PDF

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Publication number
FR3082662B1
FR3082662B1 FR1906391A FR1906391A FR3082662B1 FR 3082662 B1 FR3082662 B1 FR 3082662B1 FR 1906391 A FR1906391 A FR 1906391A FR 1906391 A FR1906391 A FR 1906391A FR 3082662 B1 FR3082662 B1 FR 3082662B1
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France
Prior art keywords
light
optoelectronic device
diodes
walls
light confinement
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Expired - Fee Related
Application number
FR1906391A
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French (fr)
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FR3082662A1 (en
Inventor
Olivier Jeannin
Erwan Dornel
Eric Pourquier
Tiphaine Dupont
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Aledia
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Aledia
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Publication of FR3082662B1 publication Critical patent/FR3082662B1/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Abstract

La fabrication d’un dispositif optoélectronique (10) comporte la formation de diodes électroluminescentes (11) où chacune présente une forme filaire, la formation de parois d’espacement (14) réalisées dans un premier matériau diélectrique et transparent au rayonnement lumineux (16) en provenance des diodes (11). Les flancs latéraux (111) de chaque diode (11), sur toute sa hauteur (H), sont entourés par au moins l’une des parois d’espacement (14). Des parois de confinement lumineux (17) sont formées dans un deuxième matériau apte à bloquer le rayonnement lumineux (16) en provenance des diodes (11). Les parois de confinement lumineux (17) recouvrent directement les flancs latéraux (141) des parois d’espacement (14) en étant à leur contact. Le rayonnement (16) en provenance de chaque diode (11) et dirigé en direction des diodes (11) adjacentes est bloqué par la paroi de confinement (17). Les bordures supérieures (112) des diodes (11) sont recouvertes par le matériau de confinement lumineux de sorte à assurer une extraction lumineuse par la face arrière du dispositif optoélectronique (10). Un dispositif optoélectronique (10) en tant que tel est aussi décrit. Figure 14The fabrication of an optoelectronic device (10) involves forming light emitting diodes (11) where each has a wire shape, forming spacer walls (14) made of a first dielectric material transparent to light radiation (16) from the diodes (11). The side flanks (111) of each diode (11), over its entire height (H), are surrounded by at least one of the spacer walls (14). Light confinement walls (17) are formed in a second material capable of blocking the light radiation (16) coming from the diodes (11). The light containment walls (17) directly cover the side flanks (141) of the spacer walls (14) by being in contact with them. The radiation (16) coming from each diode (11) and directed towards the adjacent diodes (11) is blocked by the containment wall (17). The upper edges (112) of the diodes (11) are covered by the light confinement material so as to ensure light extraction through the rear face of the optoelectronic device (10). An optoelectronic device (10) as such is also described. Figure 14

FR1906391A 2019-06-14 2019-06-14 A method of manufacturing an optoelectronic device with self-aligned light confinement walls Expired - Fee Related FR3082662B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1906391A FR3082662B1 (en) 2019-06-14 2019-06-14 A method of manufacturing an optoelectronic device with self-aligned light confinement walls

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1906391 2019-06-14
FR1906391A FR3082662B1 (en) 2019-06-14 2019-06-14 A method of manufacturing an optoelectronic device with self-aligned light confinement walls

Publications (2)

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FR3082662A1 FR3082662A1 (en) 2019-12-20
FR3082662B1 true FR3082662B1 (en) 2020-11-13

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FR1906391A Expired - Fee Related FR3082662B1 (en) 2019-06-14 2019-06-14 A method of manufacturing an optoelectronic device with self-aligned light confinement walls

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Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3000298B1 (en) * 2012-12-20 2015-01-16 Aledia OPTIMIZED PROCESS FOR MANUFACTURING ELECTROLUMINESCENT NANOWIRES
FR3053530B1 (en) * 2016-06-30 2018-07-27 Aledia PIXEL OPTOELECTRONIC DEVICE WITH IMPROVED CONTRAST AND LUMINANCE
FR3053435B1 (en) * 2016-07-01 2020-07-17 Valeo Vision LIGHTING AND / OR SIGNALING DEVICE FOR A MOTOR VEHICLE

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