FR3077673B1 - SECURE VOLATILE MEMORY POWER CIRCUIT - Google Patents

SECURE VOLATILE MEMORY POWER CIRCUIT Download PDF

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Publication number
FR3077673B1
FR3077673B1 FR1851036A FR1851036A FR3077673B1 FR 3077673 B1 FR3077673 B1 FR 3077673B1 FR 1851036 A FR1851036 A FR 1851036A FR 1851036 A FR1851036 A FR 1851036A FR 3077673 B1 FR3077673 B1 FR 3077673B1
Authority
FR
France
Prior art keywords
volatile memory
power circuit
memory power
power supply
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1851036A
Other languages
French (fr)
Other versions
FR3077673A1 (en
Inventor
Didier Georges
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Banks and Acquirers International Holding SAS
Original Assignee
Ingenico Group SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ingenico Group SA filed Critical Ingenico Group SA
Priority to FR1851036A priority Critical patent/FR3077673B1/en
Publication of FR3077673A1 publication Critical patent/FR3077673A1/en
Application granted granted Critical
Publication of FR3077673B1 publication Critical patent/FR3077673B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G11C5/144—Detection of predetermined disconnection or reduction of power supply, e.g. power down or power standby
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4078—Safety or protection circuits, e.g. for preventing inadvertent or unauthorised reading or writing; Status cells; Test cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Storage Device Security (AREA)
  • Power Sources (AREA)
  • Stand-By Power Supply Arrangements (AREA)

Abstract

L'invention concerne un circuit sécurisé (20) d'alimentation électrique d'une mémoire volatile (202) comprenant : - une branche d'alimentation (200) comprenant une unité d'alimentation électrique (201) configurée pour fournir une tension d'alimentation continue à ladite mémoire volatile (202), et - au moins une branche de sécurité (210), montée en dérivation avec ladite unité d'alimentation électrique (201), comprenant un premier condensateur (C11) de découplage. Selon l'invention, ladite au moins une branche de sécurité (201) comprend au moins un deuxième condensateur (C12) monté en série avec ledit premier condensateur (C11) de sorte à maintenir ladite tension d'alimentation continue lorsque ledit premier (C11) ou ledit au moins un deuxième (C12) condensateur présente une anomalie.The invention relates to a secure circuit (20) for the power supply of a volatile memory (202) comprising: - a power supply branch (200) comprising a power supply unit (201) configured to supply a voltage of continuous supply to said volatile memory (202), and - at least one safety branch (210), connected in bypass with said power supply unit (201), comprising a first decoupling capacitor (C11). According to the invention, said at least one safety branch (201) comprises at least a second capacitor (C12) mounted in series with said first capacitor (C11) so as to maintain said DC supply voltage when said first (C11) or said at least a second (C12) capacitor has an anomaly.

FR1851036A 2018-02-07 2018-02-07 SECURE VOLATILE MEMORY POWER CIRCUIT Active FR3077673B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR1851036A FR3077673B1 (en) 2018-02-07 2018-02-07 SECURE VOLATILE MEMORY POWER CIRCUIT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1851036A FR3077673B1 (en) 2018-02-07 2018-02-07 SECURE VOLATILE MEMORY POWER CIRCUIT
FR1851036 2018-02-07

Publications (2)

Publication Number Publication Date
FR3077673A1 FR3077673A1 (en) 2019-08-09
FR3077673B1 true FR3077673B1 (en) 2020-10-16

Family

ID=62528563

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1851036A Active FR3077673B1 (en) 2018-02-07 2018-02-07 SECURE VOLATILE MEMORY POWER CIRCUIT

Country Status (1)

Country Link
FR (1) FR3077673B1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2851757B2 (en) * 1992-12-18 1999-01-27 三菱電機株式会社 Semiconductor device and semiconductor storage device
JP3641149B2 (en) * 1998-12-18 2005-04-20 日本電信電話株式会社 Self-destructive semiconductor device
JP2008077705A (en) * 2006-09-19 2008-04-03 Fujitsu Ltd Semiconductor memory device
FR2916560B1 (en) * 2007-05-21 2009-08-07 Sagem Monetel Soc Par Actions CRYPTOPROCESSOR WITH ENHANCED DATA PROTECTION
US9607680B2 (en) * 2014-03-04 2017-03-28 Apple Inc. EDRAM/DRAM fabricated capacitors for use in on-chip PMUS and as decoupling capacitors in an integrated EDRAM/DRAM and PMU system

Also Published As

Publication number Publication date
FR3077673A1 (en) 2019-08-09

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