FR3069957B1 - Commutateur unidirectionnel a gachette referencee a l'electrode principale de face arriere - Google Patents

Commutateur unidirectionnel a gachette referencee a l'electrode principale de face arriere Download PDF

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Publication number
FR3069957B1
FR3069957B1 FR1757427A FR1757427A FR3069957B1 FR 3069957 B1 FR3069957 B1 FR 3069957B1 FR 1757427 A FR1757427 A FR 1757427A FR 1757427 A FR1757427 A FR 1757427A FR 3069957 B1 FR3069957 B1 FR 3069957B1
Authority
FR
France
Prior art keywords
rear panel
main electrode
trigger switch
substrate
trigger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1757427A
Other languages
English (en)
Other versions
FR3069957A1 (fr
Inventor
Samuel Menard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Tours SAS
Original Assignee
STMicroelectronics Tours SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Tours SAS filed Critical STMicroelectronics Tours SAS
Priority to FR1757427A priority Critical patent/FR3069957B1/fr
Priority to US16/052,378 priority patent/US10707337B2/en
Publication of FR3069957A1 publication Critical patent/FR3069957A1/fr
Application granted granted Critical
Publication of FR3069957B1 publication Critical patent/FR3069957B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66363—Thyristors
    • H01L29/66386—Bidirectional thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Push-Button Switches (AREA)

Abstract

L'invention concerne un commutateur unidirectionnel dont la gâchette est référencée à l'électrode principale de face arrière comprenant : un substrat (1) N ; une couche d'anode (2) P recouvrant la face arrière ; un mur (7) P entourant les faces latérales du substrat (1) ; des premier et deuxième caissons (4, 9) P formés du côté de la face avant du substrat ; une région de cathode (3) N formée dans le premier caisson (4) ; une région de gâchette (8) N formée dans le deuxième caisson (9) ; une métallisation de gâchette (M3') recouvrant la région de gâchette (8) N et une partie du deuxième caisson (9) P ; et une bande (12) P formée dans le substrat et reliant une portion d'un côté du deuxième caisson (9) à une partie supérieure dudit mur (7).
FR1757427A 2017-08-02 2017-08-02 Commutateur unidirectionnel a gachette referencee a l'electrode principale de face arriere Expired - Fee Related FR3069957B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1757427A FR3069957B1 (fr) 2017-08-02 2017-08-02 Commutateur unidirectionnel a gachette referencee a l'electrode principale de face arriere
US16/052,378 US10707337B2 (en) 2017-08-02 2018-08-01 One-way switch with a gate referenced to the main back side electrode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1757427A FR3069957B1 (fr) 2017-08-02 2017-08-02 Commutateur unidirectionnel a gachette referencee a l'electrode principale de face arriere
FR1757427 2017-08-02

Publications (2)

Publication Number Publication Date
FR3069957A1 FR3069957A1 (fr) 2019-02-08
FR3069957B1 true FR3069957B1 (fr) 2020-10-02

Family

ID=60020130

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1757427A Expired - Fee Related FR3069957B1 (fr) 2017-08-02 2017-08-02 Commutateur unidirectionnel a gachette referencee a l'electrode principale de face arriere

Country Status (2)

Country Link
US (1) US10707337B2 (fr)
FR (1) FR3069957B1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134471A (ja) * 1982-02-05 1983-08-10 Mitsubishi Electric Corp 双方向サイリスタ
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
FR2712428B1 (fr) 1993-11-10 1996-02-09 Sgs Thomson Microelectronics Commutateur bidirectionnel à commande en tension.
FR2797525B1 (fr) 1999-08-09 2001-10-12 St Microelectronics Sa Commutateur bidirectionnel a performances en commutation ameliorees
FR2861228A1 (fr) * 2003-10-17 2005-04-22 St Microelectronics Sa Structure de commutateur scr a commande hf
FR2960342B1 (fr) * 2010-05-18 2012-06-08 St Microelectronics Tours Sas Commutateur bidirectionnel a commande hf
US9455253B2 (en) * 2014-07-23 2016-09-27 Stmicroelectronics (Tours) Sas Bidirectional switch

Also Published As

Publication number Publication date
FR3069957A1 (fr) 2019-02-08
US20190043972A1 (en) 2019-02-07
US10707337B2 (en) 2020-07-07

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Effective date: 20190208

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