FR3051967B1 - METHOD OF MAKING REASONS - Google Patents
METHOD OF MAKING REASONS Download PDFInfo
- Publication number
- FR3051967B1 FR3051967B1 FR1654822A FR1654822A FR3051967B1 FR 3051967 B1 FR3051967 B1 FR 3051967B1 FR 1654822 A FR1654822 A FR 1654822A FR 1654822 A FR1654822 A FR 1654822A FR 3051967 B1 FR3051967 B1 FR 3051967B1
- Authority
- FR
- France
- Prior art keywords
- reasons
- making
- making reasons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1654822A FR3051967B1 (en) | 2016-05-27 | 2016-05-27 | METHOD OF MAKING REASONS |
EP17172346.3A EP3249468B1 (en) | 2016-05-27 | 2017-05-23 | Method for producing patterns |
US15/606,626 US10242870B2 (en) | 2016-05-27 | 2017-05-26 | Method for producing patterns |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1654822 | 2016-05-27 | ||
FR1654822A FR3051967B1 (en) | 2016-05-27 | 2016-05-27 | METHOD OF MAKING REASONS |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3051967A1 FR3051967A1 (en) | 2017-12-01 |
FR3051967B1 true FR3051967B1 (en) | 2018-05-11 |
Family
ID=56802616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1654822A Expired - Fee Related FR3051967B1 (en) | 2016-05-27 | 2016-05-27 | METHOD OF MAKING REASONS |
Country Status (3)
Country | Link |
---|---|
US (1) | US10242870B2 (en) |
EP (1) | EP3249468B1 (en) |
FR (1) | FR3051967B1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6960351B2 (en) * | 2018-02-19 | 2021-11-05 | 東京エレクトロン株式会社 | Processing method |
EP3556911A1 (en) | 2018-04-19 | 2019-10-23 | Comadur S.A. | Method for structuring a decorative or technical pattern in an object made of an at least partially transparent amorphous, crystalline or semi-crystalline material |
CN111825311A (en) * | 2019-04-17 | 2020-10-27 | 中国兵器工业第五九研究所 | Micro-nano hot-press molding process for optical glass array lens |
CN113981400B (en) * | 2021-09-10 | 2023-10-20 | 浙江上方电子装备有限公司 | Electrochromic device capable of displaying pattern and coating method thereof |
FR3127628A1 (en) * | 2021-09-24 | 2023-03-31 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Process for manufacturing a mold for nano-imprint and associated mold |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19837395C2 (en) * | 1998-08-18 | 2001-07-19 | Infineon Technologies Ag | Method for producing a semiconductor component containing a structured insulation layer |
KR20120013747A (en) * | 2010-08-06 | 2012-02-15 | 삼성전자주식회사 | Method for manufacturing a strained semiconductor device |
KR20130020221A (en) * | 2011-08-19 | 2013-02-27 | 삼성전자주식회사 | Semiconductor dievices and methods of manufacturing the same |
FR3000600B1 (en) | 2012-12-28 | 2018-04-20 | Commissariat Energie Atomique | MICROELECTRONIC METHOD FOR ETCHING A LAYER |
FR3000601B1 (en) * | 2012-12-28 | 2016-12-09 | Commissariat Energie Atomique | METHOD FOR FORMING SPACERS OF A GRID OF A TRANSISTOR |
FR3028350B1 (en) | 2014-11-10 | 2018-09-28 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | IMPROVED PATTERN REALIZATION METHOD IN THIN LAYER |
US10276715B2 (en) * | 2016-02-25 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin field effect transistor and method for fabricating the same |
-
2016
- 2016-05-27 FR FR1654822A patent/FR3051967B1/en not_active Expired - Fee Related
-
2017
- 2017-05-23 EP EP17172346.3A patent/EP3249468B1/en active Active
- 2017-05-26 US US15/606,626 patent/US10242870B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3249468A1 (en) | 2017-11-29 |
FR3051967A1 (en) | 2017-12-01 |
US20170345655A1 (en) | 2017-11-30 |
US10242870B2 (en) | 2019-03-26 |
EP3249468B1 (en) | 2018-12-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20171201 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
ST | Notification of lapse |
Effective date: 20210105 |