FR2980920B1 - Circuit integre a cle d'identification auto-programmee - Google Patents
Circuit integre a cle d'identification auto-programmeeInfo
- Publication number
- FR2980920B1 FR2980920B1 FR1158734A FR1158734A FR2980920B1 FR 2980920 B1 FR2980920 B1 FR 2980920B1 FR 1158734 A FR1158734 A FR 1158734A FR 1158734 A FR1158734 A FR 1158734A FR 2980920 B1 FR2980920 B1 FR 2980920B1
- Authority
- FR
- France
- Prior art keywords
- self
- integrated circuit
- identification key
- programmed identification
- programmed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/57—Protection from inspection, reverse engineering or tampering
- H01L23/576—Protection from inspection, reverse engineering or tampering using active circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
- H01L2223/5444—Marks applied to semiconductor devices or parts containing identification or tracking information for electrical read out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1158734A FR2980920B1 (fr) | 2011-09-29 | 2011-09-29 | Circuit integre a cle d'identification auto-programmee |
US13/607,578 US8848417B2 (en) | 2011-09-29 | 2012-09-07 | Integrated circuit with a self-programmed identification key |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1158734A FR2980920B1 (fr) | 2011-09-29 | 2011-09-29 | Circuit integre a cle d'identification auto-programmee |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2980920A1 FR2980920A1 (fr) | 2013-04-05 |
FR2980920B1 true FR2980920B1 (fr) | 2013-10-04 |
Family
ID=45815644
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1158734A Expired - Fee Related FR2980920B1 (fr) | 2011-09-29 | 2011-09-29 | Circuit integre a cle d'identification auto-programmee |
Country Status (2)
Country | Link |
---|---|
US (1) | US8848417B2 (fr) |
FR (1) | FR2980920B1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103192521B (zh) * | 2013-04-29 | 2015-08-12 | 中发输配电设备(平湖)有限公司 | 盆形绝缘子校平装置 |
US9666660B2 (en) * | 2013-08-16 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structures including metal insulator metal capacitor |
US9298946B2 (en) * | 2013-09-09 | 2016-03-29 | Qualcomm Incorporated | Physically unclonable function based on breakdown voltage of metal-insulator-metal device |
US9189654B2 (en) * | 2013-12-04 | 2015-11-17 | International Business Machines Corporation | On-chip structure for security application |
CN106997843B (zh) * | 2016-01-22 | 2020-05-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件安全认证方法 |
FR3050319B1 (fr) * | 2016-04-14 | 2018-05-11 | Stmicroelectronics Sa | Memoire morte configurable |
FR3053156B1 (fr) * | 2016-06-28 | 2018-11-16 | Stmicroelectronics (Rousset) Sas | Composant a faible dispersion dans une puce electronique |
US10462110B2 (en) * | 2017-02-16 | 2019-10-29 | Intel Corporation | System, apparatus and method for providing a unique identifier in a fuseless semiconductor device |
US10643006B2 (en) * | 2017-06-14 | 2020-05-05 | International Business Machines Corporation | Semiconductor chip including integrated security circuit |
FR3069677A1 (fr) | 2017-07-27 | 2019-02-01 | Stmicroelectronics (Crolles 2) Sas | Dispositif de generation d'un nombre aleatoire |
US10623192B2 (en) | 2017-08-25 | 2020-04-14 | Synopsys, Inc. | Gate oxide breakdown in OTP memory cells for physical unclonable function (PUF) security |
US11145591B2 (en) * | 2019-11-18 | 2021-10-12 | International Business Machines Corporation | Integrated circuit (IC) device integral capacitor and anti-fuse |
US11516028B2 (en) | 2019-12-24 | 2022-11-29 | CERA Licensing Limited | Temperature sensing physical unclonable function (PUF) authentication system |
GB201919297D0 (en) | 2019-12-24 | 2020-02-05 | Aronson Bill | Temperature sensing physical unclonable function (puf) authenication system |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5056061A (en) | 1989-12-20 | 1991-10-08 | N. A. Philips Corporation | Circuit for encoding identification information on circuit dice using fet capacitors |
JP2000003991A (ja) | 1998-06-15 | 2000-01-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6180976B1 (en) | 1999-02-02 | 2001-01-30 | Conexant Systems, Inc. | Thin-film capacitors and methods for forming the same |
US6504202B1 (en) | 2000-02-02 | 2003-01-07 | Lsi Logic Corporation | Interconnect-embedded metal-insulator-metal capacitor |
JPWO2002050910A1 (ja) * | 2000-12-01 | 2004-04-22 | 株式会社日立製作所 | 半導体集積回路装置の識別方法と半導体集積回路装置の製造方法及び半導体集積回路装置 |
US6960819B2 (en) * | 2000-12-20 | 2005-11-01 | Broadcom Corporation | System and method for one-time programmed memory through direct-tunneling oxide breakdown |
US6916722B2 (en) | 2002-12-02 | 2005-07-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to fabricate high reliable metal capacitor within copper back-end process |
US7321502B2 (en) * | 2004-09-30 | 2008-01-22 | Intel Corporation | Non volatile data storage through dielectric breakdown |
US8134196B2 (en) | 2005-09-02 | 2012-03-13 | Stats Chippac Ltd. | Integrated circuit system with metal-insulator-metal circuit element |
US8659124B2 (en) | 2008-12-29 | 2014-02-25 | Nxp B.V. | Physical structure for use in a physical unclonable function |
-
2011
- 2011-09-29 FR FR1158734A patent/FR2980920B1/fr not_active Expired - Fee Related
-
2012
- 2012-09-07 US US13/607,578 patent/US8848417B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
FR2980920A1 (fr) | 2013-04-05 |
US20130083586A1 (en) | 2013-04-04 |
US8848417B2 (en) | 2014-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20150529 |