FR2980642B1 - SEMICONDUCTOR SUPER-NETWORK DEVICE OPERATING IN TERAHERTZ FREQUENCY DOMAIN - Google Patents

SEMICONDUCTOR SUPER-NETWORK DEVICE OPERATING IN TERAHERTZ FREQUENCY DOMAIN

Info

Publication number
FR2980642B1
FR2980642B1 FR1158491A FR1158491A FR2980642B1 FR 2980642 B1 FR2980642 B1 FR 2980642B1 FR 1158491 A FR1158491 A FR 1158491A FR 1158491 A FR1158491 A FR 1158491A FR 2980642 B1 FR2980642 B1 FR 2980642B1
Authority
FR
France
Prior art keywords
network device
frequency domain
device operating
terahertz frequency
semiconductor super
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1158491A
Other languages
French (fr)
Other versions
FR2980642A1 (en
Inventor
Christophe Minot
Vishal Jagtap
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHRISTOPHE MINOT, FR
Original Assignee
Centre National de la Recherche Scientifique CNRS
Telecom ParisTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Telecom ParisTech filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1158491A priority Critical patent/FR2980642B1/en
Priority to PCT/EP2012/068522 priority patent/WO2013041613A1/en
Publication of FR2980642A1 publication Critical patent/FR2980642A1/en
Application granted granted Critical
Publication of FR2980642B1 publication Critical patent/FR2980642B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
    • H01L29/151—Compositional structures
    • H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
    • H01L29/155—Comprising only semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
FR1158491A 2011-09-23 2011-09-23 SEMICONDUCTOR SUPER-NETWORK DEVICE OPERATING IN TERAHERTZ FREQUENCY DOMAIN Expired - Fee Related FR2980642B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1158491A FR2980642B1 (en) 2011-09-23 2011-09-23 SEMICONDUCTOR SUPER-NETWORK DEVICE OPERATING IN TERAHERTZ FREQUENCY DOMAIN
PCT/EP2012/068522 WO2013041613A1 (en) 2011-09-23 2012-09-20 Semiconductor superlattice device operating in the terahertz frequency field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1158491A FR2980642B1 (en) 2011-09-23 2011-09-23 SEMICONDUCTOR SUPER-NETWORK DEVICE OPERATING IN TERAHERTZ FREQUENCY DOMAIN

Publications (2)

Publication Number Publication Date
FR2980642A1 FR2980642A1 (en) 2013-03-29
FR2980642B1 true FR2980642B1 (en) 2014-11-14

Family

ID=46875845

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1158491A Expired - Fee Related FR2980642B1 (en) 2011-09-23 2011-09-23 SEMICONDUCTOR SUPER-NETWORK DEVICE OPERATING IN TERAHERTZ FREQUENCY DOMAIN

Country Status (2)

Country Link
FR (1) FR2980642B1 (en)
WO (1) WO2013041613A1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1195895A (en) * 1997-04-10 1998-10-14 李炳辉 Semiconductor quantum oscillator device
US7158545B2 (en) * 2003-09-12 2007-01-02 Massachusetts Institute Of Technology Terahertz lasers and amplifiers based on resonant optical phonon scattering to achieve population inversion

Also Published As

Publication number Publication date
FR2980642A1 (en) 2013-03-29
WO2013041613A1 (en) 2013-03-28

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Legal Events

Date Code Title Description
TP Transmission of property

Owner name: CHRISTOPHE MINOT, FR

Effective date: 20150318

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 7

CA Change of address

Effective date: 20180112

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

ST Notification of lapse

Effective date: 20210505