FR2973575B1 - ANY SOLID PHOTOVOLTAIC DEVICE COMPRISING AN ABSORBER LAYER BASED ON TIN SULFIDE AND ANTIMONY - Google Patents

ANY SOLID PHOTOVOLTAIC DEVICE COMPRISING AN ABSORBER LAYER BASED ON TIN SULFIDE AND ANTIMONY

Info

Publication number
FR2973575B1
FR2973575B1 FR1152841A FR1152841A FR2973575B1 FR 2973575 B1 FR2973575 B1 FR 2973575B1 FR 1152841 A FR1152841 A FR 1152841A FR 1152841 A FR1152841 A FR 1152841A FR 2973575 B1 FR2973575 B1 FR 2973575B1
Authority
FR
France
Prior art keywords
antimony
tin sulfide
photovoltaic device
absorber layer
layer based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1152841A
Other languages
French (fr)
Other versions
FR2973575A1 (en
Inventor
Gerardo Larramona
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IMRA Europe SAS
Original Assignee
IMRA Europe SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IMRA Europe SAS filed Critical IMRA Europe SAS
Priority to FR1152841A priority Critical patent/FR2973575B1/en
Priority to JP2012083462A priority patent/JP2012222351A/en
Publication of FR2973575A1 publication Critical patent/FR2973575A1/en
Application granted granted Critical
Publication of FR2973575B1 publication Critical patent/FR2973575B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The device has a porous substrate (1) and a filling layer (3) that are made of n-type transparent semiconductor compound or p-type transparent semiconductor compound. An absorption layer (2) is formed between the substrate and the filling layer and made of absorbent compound such as antimony and tin sulfide based antimony and tin compound. The substrate comprises pores (1-1) having a size of about 10-100 nanometer, and nanocrystals (1-2) having a mean size of about 30-50 nanometer.
FR1152841A 2011-04-01 2011-04-01 ANY SOLID PHOTOVOLTAIC DEVICE COMPRISING AN ABSORBER LAYER BASED ON TIN SULFIDE AND ANTIMONY Expired - Fee Related FR2973575B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1152841A FR2973575B1 (en) 2011-04-01 2011-04-01 ANY SOLID PHOTOVOLTAIC DEVICE COMPRISING AN ABSORBER LAYER BASED ON TIN SULFIDE AND ANTIMONY
JP2012083462A JP2012222351A (en) 2011-04-01 2012-04-02 Solid photovoltaic device having absorber layer based on tin antimony sulfide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1152841A FR2973575B1 (en) 2011-04-01 2011-04-01 ANY SOLID PHOTOVOLTAIC DEVICE COMPRISING AN ABSORBER LAYER BASED ON TIN SULFIDE AND ANTIMONY

Publications (2)

Publication Number Publication Date
FR2973575A1 FR2973575A1 (en) 2012-10-05
FR2973575B1 true FR2973575B1 (en) 2013-12-20

Family

ID=44548813

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1152841A Expired - Fee Related FR2973575B1 (en) 2011-04-01 2011-04-01 ANY SOLID PHOTOVOLTAIC DEVICE COMPRISING AN ABSORBER LAYER BASED ON TIN SULFIDE AND ANTIMONY

Country Status (2)

Country Link
JP (1) JP2012222351A (en)
FR (1) FR2973575B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101838975B1 (en) * 2016-12-13 2018-03-15 인천대학교 산학협력단 Photo detector and Method for fabricating the same
CN107026265B (en) * 2017-06-05 2019-05-17 深圳职业技术学院 A kind of lithium ion battery SnS2The preparation method of/SnSb composite negative pole material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002246623A (en) * 2001-02-20 2002-08-30 Sharp Corp Dye-sensitized solar cell and method of manufacturing it
FR2881881B1 (en) * 2005-02-04 2007-06-08 Imra Europ Sa Sa SOLID PHOTOVOLTAIC DEVICE WITH INTERPENETRATED CONFIGURATION COMPRISING NEW ABSORBERS OR SEMICONDUCTOR MATERIALS
FR2899385B1 (en) * 2006-03-31 2008-06-27 Imra Europ Sas Soc Par Actions SOLID PHOTOVOLTAIC DEVICE COMPRISING ANTIMONY SULFIDE ABSORBER LAYER
FR2917898B1 (en) * 2007-06-21 2009-10-30 Imra Europ Sas Soc Par Actions ANY SOLID PHOTOVOLTAIC DEVICE COMPRISING AN ABSORPTION LAYER BASED ON ANTIMONY SULFIDE COMPOUND (S) AND ANTIMONY AND COPPER SULFIDE SILVER OR SULFIDE COMPOUND (S)
US8236599B2 (en) * 2009-04-09 2012-08-07 State of Oregon acting by and through the State Board of Higher Education Solution-based process for making inorganic materials

Also Published As

Publication number Publication date
JP2012222351A (en) 2012-11-12
FR2973575A1 (en) 2012-10-05

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