FR2971887B1 - Photosite a transfert de charges amélioré - Google Patents

Photosite a transfert de charges amélioré

Info

Publication number
FR2971887B1
FR2971887B1 FR1151318A FR1151318A FR2971887B1 FR 2971887 B1 FR2971887 B1 FR 2971887B1 FR 1151318 A FR1151318 A FR 1151318A FR 1151318 A FR1151318 A FR 1151318A FR 2971887 B1 FR2971887 B1 FR 2971887B1
Authority
FR
France
Prior art keywords
photosity
load transfer
improved load
improved
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1151318A
Other languages
English (en)
Other versions
FR2971887A1 (fr
Inventor
Julien Michelot
Francois Roy
Frederic Lalanne
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics SA
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA, STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics SA
Priority to FR1151318A priority Critical patent/FR2971887B1/fr
Priority to US13/398,287 priority patent/US8686483B2/en
Publication of FR2971887A1 publication Critical patent/FR2971887A1/fr
Application granted granted Critical
Publication of FR2971887B1 publication Critical patent/FR2971887B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR1151318A 2011-02-17 2011-02-17 Photosite a transfert de charges amélioré Expired - Fee Related FR2971887B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1151318A FR2971887B1 (fr) 2011-02-17 2011-02-17 Photosite a transfert de charges amélioré
US13/398,287 US8686483B2 (en) 2011-02-17 2012-02-16 Charge transfer photosite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1151318A FR2971887B1 (fr) 2011-02-17 2011-02-17 Photosite a transfert de charges amélioré

Publications (2)

Publication Number Publication Date
FR2971887A1 FR2971887A1 (fr) 2012-08-24
FR2971887B1 true FR2971887B1 (fr) 2013-02-22

Family

ID=44119738

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1151318A Expired - Fee Related FR2971887B1 (fr) 2011-02-17 2011-02-17 Photosite a transfert de charges amélioré

Country Status (2)

Country Link
US (1) US8686483B2 (fr)
FR (1) FR2971887B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102363433B1 (ko) 2015-01-15 2022-02-16 삼성전자주식회사 이미지 센서

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6339248B1 (en) * 1999-11-15 2002-01-15 Omnivision Technologies, Inc. Optimized floating P+ region photodiode for a CMOS image sensor
KR100541320B1 (ko) * 2002-07-19 2006-01-10 동부아남반도체 주식회사 씨모스 이미지 센서의 핀 포토다이오드 및 그 형성 방법
KR20040060482A (ko) * 2002-12-30 2004-07-06 동부전자 주식회사 포토 다이오드 및 이의 제조 방법
KR100907884B1 (ko) * 2002-12-31 2009-07-15 동부일렉트로닉스 주식회사 반도체 포토 다이오드 및 이의 제조 방법
US6921934B2 (en) * 2003-03-28 2005-07-26 Micron Technology, Inc. Double pinned photodiode for CMOS APS and method of formation
JP4758061B2 (ja) * 2003-10-16 2011-08-24 パナソニック株式会社 固体撮像装置およびその製造方法
KR100606906B1 (ko) * 2004-12-29 2006-08-01 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토다이오드 및 그 제조방법
US7205627B2 (en) * 2005-02-23 2007-04-17 International Business Machines Corporation Image sensor cells
EP1722421A3 (fr) * 2005-05-13 2007-04-18 Stmicroelectronics Sa Photodiode intégrée de type à substrat flottant
US7408211B2 (en) * 2006-11-10 2008-08-05 United Microelectronics Corp. Transfer transistor of CMOS image sensor
JP5374941B2 (ja) * 2008-07-02 2013-12-25 ソニー株式会社 固体撮像装置及び電子機器
US8653436B2 (en) 2009-01-09 2014-02-18 Omnivision Technologies, Inc. CMOS pixel including a transfer gate overlapping the photosensitive region

Also Published As

Publication number Publication date
US20120211804A1 (en) 2012-08-23
FR2971887A1 (fr) 2012-08-24
US8686483B2 (en) 2014-04-01

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20141031