FR2968117B1 - ELECTRONIC MEMORY - Google Patents

ELECTRONIC MEMORY

Info

Publication number
FR2968117B1
FR2968117B1 FR1059746A FR1059746A FR2968117B1 FR 2968117 B1 FR2968117 B1 FR 2968117B1 FR 1059746 A FR1059746 A FR 1059746A FR 1059746 A FR1059746 A FR 1059746A FR 2968117 B1 FR2968117 B1 FR 2968117B1
Authority
FR
France
Prior art keywords
electronic memory
electronic
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1059746A
Other languages
French (fr)
Other versions
FR2968117A1 (en
Inventor
Damien Bretegnier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Fab France SAS
Original Assignee
Altis Semiconductor SNC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Altis Semiconductor SNC filed Critical Altis Semiconductor SNC
Priority to FR1059746A priority Critical patent/FR2968117B1/en
Priority to PCT/FR2011/052376 priority patent/WO2012069719A2/en
Publication of FR2968117A1 publication Critical patent/FR2968117A1/en
Application granted granted Critical
Publication of FR2968117B1 publication Critical patent/FR2968117B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
FR1059746A 2010-11-25 2010-11-25 ELECTRONIC MEMORY Active FR2968117B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1059746A FR2968117B1 (en) 2010-11-25 2010-11-25 ELECTRONIC MEMORY
PCT/FR2011/052376 WO2012069719A2 (en) 2010-11-25 2011-10-12 Electronic memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1059746A FR2968117B1 (en) 2010-11-25 2010-11-25 ELECTRONIC MEMORY

Publications (2)

Publication Number Publication Date
FR2968117A1 FR2968117A1 (en) 2012-06-01
FR2968117B1 true FR2968117B1 (en) 2016-09-02

Family

ID=43568242

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1059746A Active FR2968117B1 (en) 2010-11-25 2010-11-25 ELECTRONIC MEMORY

Country Status (2)

Country Link
FR (1) FR2968117B1 (en)
WO (1) WO2012069719A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI595486B (en) * 2016-04-07 2017-08-11 華邦電子股份有限公司 Writing method for resistive? memory cell and resistive memory

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4834542B2 (en) * 2004-04-08 2011-12-14 ルネサスエレクトロニクス株式会社 Semiconductor device
JPWO2008041278A1 (en) * 2006-09-29 2010-01-28 株式会社ルネサステクノロジ Semiconductor device
KR101481401B1 (en) * 2008-05-19 2015-01-14 삼성전자주식회사 Nonvolatile meomory device

Also Published As

Publication number Publication date
WO2012069719A3 (en) 2012-07-12
WO2012069719A2 (en) 2012-05-31
FR2968117A1 (en) 2012-06-01

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