FR2958075B1 - Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe - Google Patents

Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe

Info

Publication number
FR2958075B1
FR2958075B1 FR1052120A FR1052120A FR2958075B1 FR 2958075 B1 FR2958075 B1 FR 2958075B1 FR 1052120 A FR1052120 A FR 1052120A FR 1052120 A FR1052120 A FR 1052120A FR 2958075 B1 FR2958075 B1 FR 2958075B1
Authority
FR
France
Prior art keywords
hydrophobic material
metal electrode
producing
zone
drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1052120A
Other languages
English (en)
Other versions
FR2958075A1 (fr
Inventor
Gilgueng Hwang
Dogan Sinan Haliyo
Stephane Regnier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite Pierre et Marie Curie
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite Pierre et Marie Curie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Universite Pierre et Marie Curie filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1052120A priority Critical patent/FR2958075B1/fr
Priority to CN2011800149788A priority patent/CN102918632A/zh
Priority to EP11713677A priority patent/EP2550675A1/fr
Priority to US13/636,267 priority patent/US20130011577A1/en
Priority to JP2013500393A priority patent/JP2013522921A/ja
Priority to PCT/EP2011/001476 priority patent/WO2011116964A1/fr
Publication of FR2958075A1 publication Critical patent/FR2958075A1/fr
Application granted granted Critical
Publication of FR2958075B1 publication Critical patent/FR2958075B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroplating Methods And Accessories (AREA)
FR1052120A 2010-03-24 2010-03-24 Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe Expired - Fee Related FR2958075B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1052120A FR2958075B1 (fr) 2010-03-24 2010-03-24 Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe
CN2011800149788A CN102918632A (zh) 2010-03-24 2011-03-24 用于在疏水性材料的表面上提供金属电极的方法
EP11713677A EP2550675A1 (fr) 2010-03-24 2011-03-24 Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe
US13/636,267 US20130011577A1 (en) 2010-03-24 2011-03-24 Method for providing a metal electrode on the surface of a hydrophobic material
JP2013500393A JP2013522921A (ja) 2010-03-24 2011-03-24 疎水性材料表面上に金属電極を配設する方法
PCT/EP2011/001476 WO2011116964A1 (fr) 2010-03-24 2011-03-24 Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1052120A FR2958075B1 (fr) 2010-03-24 2010-03-24 Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe

Publications (2)

Publication Number Publication Date
FR2958075A1 FR2958075A1 (fr) 2011-09-30
FR2958075B1 true FR2958075B1 (fr) 2012-03-23

Family

ID=43302969

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1052120A Expired - Fee Related FR2958075B1 (fr) 2010-03-24 2010-03-24 Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe

Country Status (6)

Country Link
US (1) US20130011577A1 (fr)
EP (1) EP2550675A1 (fr)
JP (1) JP2013522921A (fr)
CN (1) CN102918632A (fr)
FR (1) FR2958075B1 (fr)
WO (1) WO2011116964A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019106546A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7109087B2 (en) * 2003-10-03 2006-09-19 Applied Materials, Inc. Absorber layer for DSA processing
JP4741218B2 (ja) * 2003-10-28 2011-08-03 株式会社半導体エネルギー研究所 液晶表示装置及びその作製方法、並びに液晶テレビ受像機
JP2006310346A (ja) * 2005-04-26 2006-11-09 Seiko Epson Corp 機能性膜パターン形成装置、機能性膜パターンの形成方法及び電子機器
JP2007115743A (ja) * 2005-10-18 2007-05-10 Seiko Epson Corp パターン形成方法、薄膜トランジスタ、及び電子機器
JP4732118B2 (ja) * 2005-10-18 2011-07-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2010043346A (ja) * 2008-08-18 2010-02-25 Autonetworks Technologies Ltd 導電性パターンの形成方法及びめっき端子の製造方法

Also Published As

Publication number Publication date
JP2013522921A (ja) 2013-06-13
WO2011116964A1 (fr) 2011-09-29
US20130011577A1 (en) 2013-01-10
FR2958075A1 (fr) 2011-09-30
CN102918632A (zh) 2013-02-06
EP2550675A1 (fr) 2013-01-30

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FR2958075B1 (fr) Procede de realisation d'une electrode metallique a la surface d'un materiau hydrophobe

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20141128