FR2929001B1 - Dispositif de detection de rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire - Google Patents

Dispositif de detection de rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire

Info

Publication number
FR2929001B1
FR2929001B1 FR0801484A FR0801484A FR2929001B1 FR 2929001 B1 FR2929001 B1 FR 2929001B1 FR 0801484 A FR0801484 A FR 0801484A FR 0801484 A FR0801484 A FR 0801484A FR 2929001 B1 FR2929001 B1 FR 2929001B1
Authority
FR
France
Prior art keywords
ebcmos
solar
hybrid
detection device
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0801484A
Other languages
English (en)
Other versions
FR2929001A1 (fr
Inventor
Jean Luc Reverchon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0801484A priority Critical patent/FR2929001B1/fr
Priority to PCT/EP2009/053007 priority patent/WO2009115466A1/fr
Publication of FR2929001A1 publication Critical patent/FR2929001A1/fr
Application granted granted Critical
Publication of FR2929001B1 publication Critical patent/FR2929001B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14694—The active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/429—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to measurement of ultraviolet light
FR0801484A 2008-03-18 2008-03-18 Dispositif de detection de rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire Active FR2929001B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0801484A FR2929001B1 (fr) 2008-03-18 2008-03-18 Dispositif de detection de rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire
PCT/EP2009/053007 WO2009115466A1 (fr) 2008-03-18 2009-03-13 Dispositif de detection du rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0801484A FR2929001B1 (fr) 2008-03-18 2008-03-18 Dispositif de detection de rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire

Publications (2)

Publication Number Publication Date
FR2929001A1 FR2929001A1 (fr) 2009-09-25
FR2929001B1 true FR2929001B1 (fr) 2010-03-05

Family

ID=39846940

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0801484A Active FR2929001B1 (fr) 2008-03-18 2008-03-18 Dispositif de detection de rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire

Country Status (2)

Country Link
FR (1) FR2929001B1 (fr)
WO (1) WO2009115466A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4361919A (en) * 1980-11-10 1982-12-07 Hull James R Convertible child's bed

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6747258B2 (en) * 2001-10-09 2004-06-08 Itt Manufacturing Enterprises, Inc. Intensified hybrid solid-state sensor with an insulating layer
FR2898216B1 (fr) * 2006-03-02 2008-06-06 Sagem Defense Securite Matrice, support et boitier d'un dispositif de captation d'image, procedes de fabrication correspondants

Also Published As

Publication number Publication date
WO2009115466A1 (fr) 2009-09-24
FR2929001A1 (fr) 2009-09-25

Similar Documents

Publication Publication Date Title
BRPI1007894A2 (pt) dispositivo de envio de medicamento
DE102008032787B8 (de) Kollisionserfassungsvorrichtung
IT1397291B1 (it) Dispositivo di rilevazione.
BRPI1014843A2 (pt) dispositivo de medição de urina.
BRPI0917512A2 (pt) Dispositivo de difusão com sensor de odores
BR112012015778A2 (pt) dispositivo de sinalização.
DK2479559T3 (da) Strålingsdekteteringsanordning
BRPI0915993A2 (pt) dispositivo de alarme
FR2938602B1 (fr) Dispositif de modulateur en puits
BRPI0915103A2 (pt) dispositivo de envio de cateter
FR2935737B1 (fr) Dispositif de cogeneration amelioree
DE112009002566A5 (de) Kollisionserfassungsvorrichtung
BRPI0913604A2 (pt) dispositivo de vedação
BRPI0823199A2 (pt) Aparelho de deteccao de grandeza de operacao
FR2953818B1 (fr) Dispositif de remplissage
FR2914428B1 (fr) Dispositif de detection de fuite
BRPI0923891A2 (pt) dispositivo de dosagem
FR2947723B1 (fr) Dispositif de massage.
FR2938782B1 (fr) Dispositif de soudage a double epaulement
BRPI0906557A2 (pt) Dispositivo de osteossíntese.
FR2907229B1 (fr) Dispositif de detection.
FR2908856B1 (fr) Dispositif de jonction etanche
FR2951210B1 (fr) Dispositif de lestage de garde-corps et ensemble de garde-corps associe
FR2941784B1 (fr) Dispositif de detection de passage d'individus.
FR2929001B1 (fr) Dispositif de detection de rayonnement ultraviolet de type ebcmos hybride comportant une membrane insensible au rayonnement solaire

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 13

PLFP Fee payment

Year of fee payment: 14

PLFP Fee payment

Year of fee payment: 15

PLFP Fee payment

Year of fee payment: 16

PLFP Fee payment

Year of fee payment: 17