FR2895408A1 - Organosiloxane based composition, useful as silica film precursor, comprises a hydro organosiloxane containing a silyl chain and a stabilizer containing a nitrone group - Google Patents
Organosiloxane based composition, useful as silica film precursor, comprises a hydro organosiloxane containing a silyl chain and a stabilizer containing a nitrone group Download PDFInfo
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- FR2895408A1 FR2895408A1 FR0554123A FR0554123A FR2895408A1 FR 2895408 A1 FR2895408 A1 FR 2895408A1 FR 0554123 A FR0554123 A FR 0554123A FR 0554123 A FR0554123 A FR 0554123A FR 2895408 A1 FR2895408 A1 FR 2895408A1
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- organosiloxane
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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Abstract
Description
Composition stabilisée â base de hydro-organo-siloxane et son utilisationStabilized composition based on hydro-organo-siloxane and its use
pour la réalisation d'un semi-conducteur La présente invention concerne une composition à base de hydro-organo-siloxane, utilisable notamment comme précurseur de films de silice. Elle concerne plus particulièrement les tétrasiloxanes et leur utilisation comme précurseurs de films à faible constante diélectriques. The present invention relates to a composition based on hydro-organosiloxane, which can be used in particular as a precursor for silica films. It relates more particularly to tetrasiloxanes and their use as low-dielectric constant film precursors.
Elle se rapporte également à l'utilisation d'une telle composition pour la réalisation de différents films lors de la fabrication des semi-conducteurs et notamment les couches de silice. It also relates to the use of such a composition for the production of different films during the manufacture of semiconductors and in particular silica layers.
Le 1,3,5,7-tetraméthyl cyclo tétrasiloxane (TMCTS) est un exemple d'hydro organo siloxane utilisable notamment dans l'industrie des semi-conducteurs comme précurseur pour le dépôt chimique en phase gazeuse utilisant un plasma (PECVD) de films diélectriques à faible constante k (encore appelés films low k ) sur des galettes de silicium semi-conducteur ( wafer 1 . 1,3,5,7-tetramethylcyclo-tetrasiloxane (TMCTS) is an example of a hydroorganosiloxane which can be used especially in the semiconductor industry as a precursor for the chemical vapor deposition using a plasma (PECVD) of films low k dielectric (also called low k films) on semiconductor wafers (wafer 1.
L'introduction de ces hydro organo siloxanes, et notamment du TMCTS dans le cycle de fabrication des semi-conducteurs a engendré un certain nombre de problèmes de fabrication de ces semi-conducteurs car ces siloxanes peuvent polymériser d'une façon difficilement prévisible. The introduction of these hydroorganosiloxanes, and especially TMCTS in the semiconductor manufacturing cycle has generated a number of manufacturing problems of these semiconductors because these siloxanes can polymerize in a manner that is difficult to predict.
Un tel comportement du précurseur peut s'avérer particulièrement coûteux pour le fabricant de semi-conducteurs et créer des temps d'arrêts inconsidérés des lignes de fabrication si la polymérisation de ces siloxanes a lieu dans les lignes d'alimentation contenant ces produits sous forme liquide ou gazeuse, car en règle générale, la seule réparation possible consiste à changer les lignes de distribution ainsi bouchées par de ces produits polymérisés. Such behavior of the precursor may be particularly costly for the semiconductor manufacturer and create undesired downtime of the production lines if the polymerization of these siloxanes takes place in the feed lines containing these products in liquid form. or gaseous, because as a rule, the only possible repair is to change the distribution lines thus clogged with these polymerized products.
D'autre part, avant même les conséquences extrêmes du bouchage de lignes, une modification intrinsèque du produit, et l'apparition notamment de nouveaux produits issus de phénomènes type polymérisation sera toujours préjudiciable à la qualité du dépôt. On the other hand, even before the extreme consequences of clogging of lines, an intrinsic modification of the product, and the appearance in particular of new products resulting from phenomena like polymerization will always be detrimental to the quality of the deposit.
Il existe donc aujourd'hui une demande des fabricants de semi-conducteurs pour trouver les moyens pour stabiliser ces siloxanes et le TMCTS en particulier afin d'éviter que ces produits ne polymérisent en cours de distribution dans les lignes de distribution. There is now a demand from semiconductor manufacturers to find ways to stabilize these siloxanes and TMCTS in particular to prevent these products from polymerizing during distribution in distribution lines.
On sait que ces siloxanes ont des liaisons Si-H qui peuvent réagir avec l'oxygène ou l'air engendrant ainsi une polymérisation spontanée après une brève exposition à ces gaz à température ambiante. It is known that these siloxanes have Si-H bonds that can react with oxygen or air, thus generating spontaneous polymerization after brief exposure to these gases at room temperature.
La structure cyclique de liaisons Si-O-Si des 25 tétrasiloxanes est propice à la polymérisation : c'est d'ailleurs le phénomène recherché lors de la synthèse de polysiloxanes linéaires de longueur donnée. The cyclic structure of Si-O-Si bonds of tetrasiloxanes is conducive to polymerization: it is moreover the phenomenon sought during the synthesis of linear polysiloxanes of given length.
I l est également évident que les risques liés â une telle 30 polymérisation peuvent être importants, notamment en ce qui concerne les risques liés à la sécurité si les lignes de distribution viennent à se boucher soudainement. 1l est connu, notamment de US-A-5177142 ou de US-A-5556901, de tenter de stabiliser des produits de type silane ou siloxane â l'aide d'anti-oxydants. It is also obvious that the risks associated with such polymerization can be significant, particularly with respect to safety risks if the distribution lines suddenly become clogged. It is known, particularly from US-A-5177142 or US-A-5556901, to attempt to stabilize silane or siloxane products with the aid of antioxidants.
Toutefois, une telle solution ne permet pas la stabilisation vis à vis de l'humidité toujours présente dans les lignes de distribution de ces produits chimiques, la molécule d'eau engendrant elle-même une polymérisation desdits siloxanes. However, such a solution does not allow stabilization with respect to moisture still present in the distribution lines of these chemicals, the water molecule itself generating a polymerization of said siloxanes.
Il est connu de US-2004/0127070 de stabiliser les organo hydro siloxanes à l'aide d'antioxydants de type phénolique éventuellement substitués. It is known from US-2004/0127070 to stabilize the organo-siloxanes with optionally substituted phenolic antioxidants.
Alternativement, la stabilisation de ces produits est réalisée par la combinaison de l'antioxydant phénolique et d'un alkoxysilane. Alternatively, the stabilization of these products is achieved by the combination of the phenolic antioxidant and an alkoxysilane.
Il est également connu de US-B-5858197 des compositions stabilisées de cyclo tétrasiloxanes et d'un inhibiteur de polymérisation et/ou un inhibiteur de radicaux libres dont la fonction serait d'éviter aux siloxanes de polymériser ou d'inhiber les radicaux susceptibles de conduire à la polymérisation des chaînes de siloxanes. De telles fonctions sont remplies par des inhibiteurs de polymérisation neutres ou faiblement acides, tandis que les inhibiteurs de radicaux libres sont des stabilisants évitant la réaction des chaînes avec des espèces radicalaires, issues le plus souvent d'interaction avec l'oxygène. It is also known from US-B-5858197 stabilized compositions of cyclo tetrasiloxanes and a polymerization inhibitor and / or a free radical inhibitor whose function would be to prevent the siloxanes from polymerizing or inhibiting the radicals likely to lead to the polymerization of siloxane chains. Such functions are fulfilled by neutral or weakly acidic polymerization inhibitors, whereas free radical inhibitors are stabilizers which avoid the reaction of the chains with radical species, most often resulting from interaction with oxygen.
Cependant, la description de ce brevet reste très vague quant â la définition et la fonction de ces inhibiteurs de polymérisation et/ou ces inhibiteurs de radicaux libres, ne donnant aucune indication à l'homme de métier pour sélectionner les produits adéquats. However, the description of this patent remains very vague as to the definition and function of these polymerization inhibitors and / or these free radical inhibitors, giving no indication to those skilled in the art to select the appropriate products.
Parmi les produits rentrant dans ces différentes définitions, sont cités notamment des produits considérés comme cancérigènes et notamment les hydrazines, et dont l'utilisation est par conséquent peu recommandée dans des usines de fabrication, notamment de semi-conducteurs. 11 est également connu de GB-A-2405404 des matériaux de type cyclo siloxanes stabilisés utilisables comme précurseurs de matériaux diélectriques, ces matériaux ayant une composition comportant le siloxane et un agent stabilisant choisi parmi les inhibiteurs de radicaux libres et/ou des agents de type protecteurs d'extrémité ou terminaison de chaîne > ( end-capping en langue anglaise).Parmi les précurseurs de diélectrique de type siloxanes stabilisés décrits dans cette demande de brevet, on trouve notamment le TMCTS (cité ci-avant), ainsi que l'octométhyl cyclo tétrasiloxane (DMCTS). Among the products falling within these different definitions, mention is made in particular of products considered to be carcinogenic and in particular hydrazines, and the use of which is therefore not recommended in manufacturing plants, particularly semiconductors. It is also known from GB-A-2405404 stabilized cyclo siloxane materials useful as precursors of dielectric materials, these materials having a composition comprising the siloxane and a stabilizing agent selected from free radical inhibitors and / or agents type end protectors or end-capping> (end-capping in English). Amongst the stabilized siloxane-type dielectric precursors described in this patent application, there are notably the TMCTS (cited above), as well as the octomethyl cyclo tetrasiloxane (DMCTS).
Dans cette demande GB-A-2405404, le terme end-capping reagent est défini comme un réactif qui réagit facilement avec des groupes ou radicaux hydroxyles résultant de la cassure de la liaison Si-0 de la structure de la molécule siloxane ou du cycle siloxane formant ainsi un réactif siloxane ayant une extrémité non réactive car recouverte (ec capped ). In this application GB-A-2405404, the term end-capping reagent is defined as a reagent which easily reacts with hydroxyl groups or radicals resulting from the breakage of the Si-O bond of the structure of the siloxane molecule or of the siloxane ring thus forming a siloxane reagent having a non-reactive end because covered (ec capped).
Parmi les agents de type end-capping décrits dans cette demande figurent notamment des agents de type silyl mono-fonctionnels de formule R1 R2 R3 SiX. Among the end-capping agents described in this application include mono-functional silyl agents of formula R1 R2 R3 SiX.
Les inhibiteurs de radicaux libres sont définis dans cette demande de brevet comme des substances qui stoppent la polymérisation des radicaux libres des siloxanes activés en réagissant avec ceux-ci. Par exemple, ces inhibiteurs de radicaux libres peuvent être des phénols, éventuellement substitués. Un mélange d'inhibiteurs de radicaux libres et de réactifs de type end-capping peut également être utilisé. Free radical inhibitors are defined in this patent application as substances which stop the polymerization of free radicals of activated siloxanes by reacting with them. For example, these free radical inhibitors may be phenols, optionally substituted. A mixture of free radical inhibitors and end-capping reagents can also be used.
L'invention concerne de nouvelles compositions à base de hydro organo siloxanes, en particulier les tétrasiloxanes, et notamment les cyclo tétrasiloxanes et plus particulièrement l'OMCTS ou le TMCTS et un stabilisant comportant au moins une fonction nitrone de type : Pour plus de détails concernant la définition de la 20 fonction nitrone, on pourra se reporter à l'article paru dans le magasine L'Actualité Chimique , Nov-Dec 2003, intitulé: La vectorisation de pièges à radicaux libres, Nouvelle stratégie thérapeutique , par Grégory Durand, Ange Polidori et Bernard Pucci. 25 L'invention concerne des compositions à base de hydro organo siloxane, utilisable notamment comme précurseurs de films de silice, caractérisé en ce qu'elles comportent notamment . (a) au moins un hydro organo siloxane ayant au moins une chaîne de formule [-HSiR-O], le radical R étant un radical choisi parmi les radicaux alkyle (C1 à C18, linéaires, branchés et/ou cycliques), 30 ou les radicaux alkoxy linéaires, branchés et /ou cycliques, ou les radicaux alkyl substitués ou non ; The invention relates to novel compositions based on hydroorganosiloxanes, in particular tetrasiloxanes, and especially cyclo tetrasiloxanes and more particularly to OMCTS or TMCTS and a stabilizer comprising at least one nitrone function of the following type: For more details concerning the definition of the nitrone function, reference may be made to the article published in the magazine L'Actualité Chimique, Nov-Dec 2003, entitled: The vectorization of free radical traps, New therapeutic strategy, by Grégory Durand, Polidori Angel and Bernard Pucci. The invention relates to compositions based on hydroorganosiloxane, which can be used in particular as precursors for silica films, characterized in that they comprise in particular. (a) at least one hydroorganosiloxane having at least one chain of the formula [-HSiR-O], the radical R being a radical chosen from linear, branched and / or cyclic (C1-C18) alkyl radicals, linear, branched and / or cyclic alkoxy radicals, or substituted or unsubstituted alkyl radicals;
(b) au moins un stabilisant ayant au moins une 5 fonction nitrone de formule : o- (b) at least one stabilizer having at least one nitrone function of the formula:
De préférence, l'hydro organo siloxane sera un Preferably, the hydroorganosiloxane will be a
10 tétrasiloxane, plus préférentiellement un cyclo tétrasiloxane de formule : R1 R2 f Si o7 0 R8 , \,R3 Si Si Avec R1-Re choisis parmi le groupe de produits suivants : hydrogène - un radical alkyl C1-Cxo linéraire, branché au cyclique 25 un radical alkoxy C1-C4 Tetrasiloxane, more preferably a cyclo tetrasiloxane of formula: ## STR1 ## wherein R 1 -R 1 is selected from the following group of products: hydrogen - a linear C 1 -C 10 alkyl radical, branched to cyclic a C1-C4 alkoxy radical
Selon un mode préférentiel, la composition selon l'invention utilise du 1,3,5,7 tetramethyl cyclo tétrasiloxane (TMCTS). L'utilisation des stabilisants du type nitrone et notamment les molécules du groupe PBN (N-TERT-BUTYL-ALPHAPHENYLNITRCNE), DMPO (5,5-DIMETHYL-1-PYRRCLINE N-CXIDE)et POBN (ALPHA-(4-PYRIDYL I--DXIDE)-N-TERT-BUTYLNITRDNE) 15 20 R7 ~Ra 1 a~S R6 Rs 30 s'avère particulièrement efficace pour réaliser une telle stabilisation et permet d'améliorer les performances de l'art antérieur. According to a preferred embodiment, the composition according to the invention uses 1,3,5,7 tetramethylcyclo tetrasiloxane (TMCTS). The use of nitrone stabilizers and in particular the molecules of the PBN group (N-TERT-BUTYL-ALPHAPHENYLNITRCNE), DMPO (5,5-DIMETHYL-1-PYRRCLINE N-CXIDE) and POBN (ALPHA- (4-PYRIDYL) --DXIDE) -N-TERT-BUTYLNITRDNE) 15 20 R7 ~ Ra 1 a ~ S R6 Rs 30 is particularly effective for achieving such stabilization and improves the performance of the prior art.
L'invention concerne également la réalisation notamment de couches ou de films de silice SiO2 à l'aide d'une des compositions décrites dans la présente demande typiquement par la technologie PECVD, films utilisés notamment pour réaliser des couches de protection particulièrement dures, pour réaliser des films diélectriques à très faible constante k, et notamment pour la réalisation de couches barrières ou de couches de séparation de connexions électriques. The invention also relates to the production, in particular, of layers or films of SiO2 silica using one of the compositions described in the present application, typically using PECVD technology, films used in particular for producing particularly tough protective layers, to achieve dielectric films with very low constant k, and in particular for the production of barrier layers or layers of separation of electrical connections.
L'invention concerne plus généralement l'utilisation de la fonction nitrone, par exemple partie d'un stabilisant, pour stabiliser les précurseurs du type hydro organo siloxane, et notamment les précurseurs de SiO2 dans, notamment, la fabrication des semi-conducteurs. The invention relates more generally to the use of the nitrone function, for example part of a stabilizer, for stabilizing the precursors of the hydroorganosiloxane type, and in particular the precursors of SiO 2 in, in particular, the manufacture of semiconductors.
La préparation d'une composition selon l'invention dépend du type de nitrones utilisés : certains nitrones sont en phase solide ou en phase liquide à température ambiante. Le mélange visé consiste donc à dissoudre ou mélanger quelques milliers de ppm de nitrones dans le produit à stabiliser. Le choix de 1000ppm environ est préféré, car il permet de ne pas contaminer excessivement le produit à stabiliser. Dans certaines applications, il est possible de réduire encore cette quantité, ce qui constitue un avantage supplémentaire. Il est en effet important, notamment dans les applications de l'invention concernant la fabrication des circuits intégrés, d'introduire le moins possible d'impuretés dans le produit à utiliser. The preparation of a composition according to the invention depends on the type of nitrones used: some nitrones are in the solid phase or in the liquid phase at room temperature. The target mixture therefore consists of dissolving or mixing a few thousand ppm of nitrones in the product to be stabilized. The choice of approximately 1000 ppm is preferred because it makes it possible not to excessively contaminate the product to be stabilized. In some applications, it is possible to further reduce this amount, which is an additional advantage. It is indeed important, especially in the applications of the invention concerning the manufacture of integrated circuits, to introduce the least possible impurities into the product to be used.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0554123A FR2895408A1 (en) | 2005-12-28 | 2005-12-28 | Organosiloxane based composition, useful as silica film precursor, comprises a hydro organosiloxane containing a silyl chain and a stabilizer containing a nitrone group |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0554123A FR2895408A1 (en) | 2005-12-28 | 2005-12-28 | Organosiloxane based composition, useful as silica film precursor, comprises a hydro organosiloxane containing a silyl chain and a stabilizer containing a nitrone group |
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| Publication Number | Publication Date |
|---|---|
| FR2895408A1 true FR2895408A1 (en) | 2007-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0554123A Pending FR2895408A1 (en) | 2005-12-28 | 2005-12-28 | Organosiloxane based composition, useful as silica film precursor, comprises a hydro organosiloxane containing a silyl chain and a stabilizer containing a nitrone group |
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| FR (1) | FR2895408A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008075293A1 (en) * | 2006-12-18 | 2008-06-26 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Additives to stabilize cyclotetrasiloxane and its derivatives |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US550272A (en) * | 1895-11-26 | Thill-coupling | ||
| US20040039219A1 (en) * | 2001-12-13 | 2004-02-26 | Tianniu Chen | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
| US20050176596A1 (en) * | 2002-05-31 | 2005-08-11 | Piero Piccinelli | Alkylaminosiloxanes as corrosion inhibitors |
-
2005
- 2005-12-28 FR FR0554123A patent/FR2895408A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US550272A (en) * | 1895-11-26 | Thill-coupling | ||
| US20040039219A1 (en) * | 2001-12-13 | 2004-02-26 | Tianniu Chen | Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
| US20050176596A1 (en) * | 2002-05-31 | 2005-08-11 | Piero Piccinelli | Alkylaminosiloxanes as corrosion inhibitors |
Non-Patent Citations (1)
| Title |
|---|
| KLAMANN DIETER, HAGEMANN HERMANN: "Houben-Weyl, Methoden der organischen Chemie (vierte Auflage), C, N-Doppelbindungs-systeme", 1990, GEORG THIEME VERLAG, GERMANY, XP002396758 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008075293A1 (en) * | 2006-12-18 | 2008-06-26 | L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Additives to stabilize cyclotetrasiloxane and its derivatives |
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