FR2886055B1 - PROCESS FOR PRODUCING A LIGHT-EMITTING DIODE EMITTING IN ULTRAVIOLET BASED ON HETEROJUNCTION OF n-ZnO / p-GaN: Mg ON A SUBSTRATE OF c-Al2O3 - Google Patents

PROCESS FOR PRODUCING A LIGHT-EMITTING DIODE EMITTING IN ULTRAVIOLET BASED ON HETEROJUNCTION OF n-ZnO / p-GaN: Mg ON A SUBSTRATE OF c-Al2O3

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Publication number
FR2886055B1
FR2886055B1 FR0505154A FR0505154A FR2886055B1 FR 2886055 B1 FR2886055 B1 FR 2886055B1 FR 0505154 A FR0505154 A FR 0505154A FR 0505154 A FR0505154 A FR 0505154A FR 2886055 B1 FR2886055 B1 FR 2886055B1
Authority
FR
France
Prior art keywords
heterojunction
al2o3
gan
zno
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0505154A
Other languages
French (fr)
Other versions
FR2886055A1 (en
Inventor
David John Rogers
Teherani Ferechtea Hosseini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR0505154A priority Critical patent/FR2886055B1/en
Publication of FR2886055A1 publication Critical patent/FR2886055A1/en
Application granted granted Critical
Publication of FR2886055B1 publication Critical patent/FR2886055B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
FR0505154A 2005-05-23 2005-05-23 PROCESS FOR PRODUCING A LIGHT-EMITTING DIODE EMITTING IN ULTRAVIOLET BASED ON HETEROJUNCTION OF n-ZnO / p-GaN: Mg ON A SUBSTRATE OF c-Al2O3 Expired - Fee Related FR2886055B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0505154A FR2886055B1 (en) 2005-05-23 2005-05-23 PROCESS FOR PRODUCING A LIGHT-EMITTING DIODE EMITTING IN ULTRAVIOLET BASED ON HETEROJUNCTION OF n-ZnO / p-GaN: Mg ON A SUBSTRATE OF c-Al2O3

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0505154A FR2886055B1 (en) 2005-05-23 2005-05-23 PROCESS FOR PRODUCING A LIGHT-EMITTING DIODE EMITTING IN ULTRAVIOLET BASED ON HETEROJUNCTION OF n-ZnO / p-GaN: Mg ON A SUBSTRATE OF c-Al2O3

Publications (2)

Publication Number Publication Date
FR2886055A1 FR2886055A1 (en) 2006-11-24
FR2886055B1 true FR2886055B1 (en) 2007-10-19

Family

ID=35597975

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0505154A Expired - Fee Related FR2886055B1 (en) 2005-05-23 2005-05-23 PROCESS FOR PRODUCING A LIGHT-EMITTING DIODE EMITTING IN ULTRAVIOLET BASED ON HETEROJUNCTION OF n-ZnO / p-GaN: Mg ON A SUBSTRATE OF c-Al2O3

Country Status (1)

Country Link
FR (1) FR2886055B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5193586B2 (en) * 2007-12-25 2013-05-08 株式会社東芝 Semiconductor light emitting device

Also Published As

Publication number Publication date
FR2886055A1 (en) 2006-11-24

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