FR2881272B1 - ELABORATION OF A TUNNEL OXIDE FOR THE MANUFACTURE OF A NON-VOLATILE MEMORY IN LOW TEMPERATURE FLOTOX TECHNOLOGY - Google Patents

ELABORATION OF A TUNNEL OXIDE FOR THE MANUFACTURE OF A NON-VOLATILE MEMORY IN LOW TEMPERATURE FLOTOX TECHNOLOGY

Info

Publication number
FR2881272B1
FR2881272B1 FR0550232A FR0550232A FR2881272B1 FR 2881272 B1 FR2881272 B1 FR 2881272B1 FR 0550232 A FR0550232 A FR 0550232A FR 0550232 A FR0550232 A FR 0550232A FR 2881272 B1 FR2881272 B1 FR 2881272B1
Authority
FR
France
Prior art keywords
elaboration
manufacture
low temperature
volatile memory
tunnel oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0550232A
Other languages
French (fr)
Other versions
FR2881272A1 (en
Inventor
Philippe Ferrandis
Bruno Mourey
Bernard Andre
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0550232A priority Critical patent/FR2881272B1/en
Priority to PCT/FR2006/050048 priority patent/WO2006079742A1/en
Publication of FR2881272A1 publication Critical patent/FR2881272A1/en
Application granted granted Critical
Publication of FR2881272B1 publication Critical patent/FR2881272B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
FR0550232A 2005-01-27 2005-01-27 ELABORATION OF A TUNNEL OXIDE FOR THE MANUFACTURE OF A NON-VOLATILE MEMORY IN LOW TEMPERATURE FLOTOX TECHNOLOGY Expired - Fee Related FR2881272B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0550232A FR2881272B1 (en) 2005-01-27 2005-01-27 ELABORATION OF A TUNNEL OXIDE FOR THE MANUFACTURE OF A NON-VOLATILE MEMORY IN LOW TEMPERATURE FLOTOX TECHNOLOGY
PCT/FR2006/050048 WO2006079742A1 (en) 2005-01-27 2006-01-24 Production of a tunnel oxide of a non-volatile memory transistor using flotox technology by low-temperature ion beam sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0550232A FR2881272B1 (en) 2005-01-27 2005-01-27 ELABORATION OF A TUNNEL OXIDE FOR THE MANUFACTURE OF A NON-VOLATILE MEMORY IN LOW TEMPERATURE FLOTOX TECHNOLOGY

Publications (2)

Publication Number Publication Date
FR2881272A1 FR2881272A1 (en) 2006-07-28
FR2881272B1 true FR2881272B1 (en) 2007-08-10

Family

ID=34954038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0550232A Expired - Fee Related FR2881272B1 (en) 2005-01-27 2005-01-27 ELABORATION OF A TUNNEL OXIDE FOR THE MANUFACTURE OF A NON-VOLATILE MEMORY IN LOW TEMPERATURE FLOTOX TECHNOLOGY

Country Status (2)

Country Link
FR (1) FR2881272B1 (en)
WO (1) WO2006079742A1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63129669A (en) * 1986-11-20 1988-06-02 Matsushita Electric Ind Co Ltd Thin film transistor and manufacture thereof
JP3048072B2 (en) * 1991-05-25 2000-06-05 ローム株式会社 Method and apparatus for forming oxide film
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device

Also Published As

Publication number Publication date
WO2006079742A1 (en) 2006-08-03
FR2881272A1 (en) 2006-07-28

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20081029