FR2827709B1 - Detecteur photovoltaique a cascade quantique - Google Patents

Detecteur photovoltaique a cascade quantique

Info

Publication number
FR2827709B1
FR2827709B1 FR0109754A FR0109754A FR2827709B1 FR 2827709 B1 FR2827709 B1 FR 2827709B1 FR 0109754 A FR0109754 A FR 0109754A FR 0109754 A FR0109754 A FR 0109754A FR 2827709 B1 FR2827709 B1 FR 2827709B1
Authority
FR
France
Prior art keywords
quantic
photovoltaic detector
cascade photovoltaic
cascade
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0109754A
Other languages
English (en)
Other versions
FR2827709A1 (fr
Inventor
Vincent Berger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR0109754A priority Critical patent/FR2827709B1/fr
Priority to PCT/FR2002/002601 priority patent/WO2003010829A1/fr
Publication of FR2827709A1 publication Critical patent/FR2827709A1/fr
Application granted granted Critical
Publication of FR2827709B1 publication Critical patent/FR2827709B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
FR0109754A 2001-07-20 2001-07-20 Detecteur photovoltaique a cascade quantique Expired - Fee Related FR2827709B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0109754A FR2827709B1 (fr) 2001-07-20 2001-07-20 Detecteur photovoltaique a cascade quantique
PCT/FR2002/002601 WO2003010829A1 (fr) 2001-07-20 2002-07-22 Detecteur photovoltaique a cascade quantique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0109754A FR2827709B1 (fr) 2001-07-20 2001-07-20 Detecteur photovoltaique a cascade quantique

Publications (2)

Publication Number Publication Date
FR2827709A1 FR2827709A1 (fr) 2003-01-24
FR2827709B1 true FR2827709B1 (fr) 2003-11-07

Family

ID=8865771

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0109754A Expired - Fee Related FR2827709B1 (fr) 2001-07-20 2001-07-20 Detecteur photovoltaique a cascade quantique

Country Status (2)

Country Link
FR (1) FR2827709B1 (fr)
WO (1) WO2003010829A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349889B2 (en) 2012-10-24 2016-05-24 Sharp Kabushiki Kaisha High operating temperature resonant tunnelling quantum well photodetector

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013041933A (ja) * 2011-08-12 2013-02-28 Hamamatsu Photonics Kk 量子カスケード検出器
JP5940656B2 (ja) * 2012-05-16 2016-06-29 浜松ホトニクス株式会社 光検出器
JP6100673B2 (ja) * 2013-11-01 2017-03-22 浜松ホトニクス株式会社 量子カスケード検出器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5165065A (en) * 1985-04-19 1992-11-17 Texas Instruments Incorporated Optically pumped quantum coupled devices
DE4220620C1 (de) * 1992-06-24 1994-01-20 Fraunhofer Ges Forschung Quantentopf-Intersubband-Infrarot-Photodetektor
DE19711505C1 (de) * 1997-03-19 1998-08-27 Fraunhofer Ges Forschung Halbleiterheterostruktur-Strahlungsdetektor für Wellenlängen aus dem infraroten Spektralbereich

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9349889B2 (en) 2012-10-24 2016-05-24 Sharp Kabushiki Kaisha High operating temperature resonant tunnelling quantum well photodetector

Also Published As

Publication number Publication date
FR2827709A1 (fr) 2003-01-24
WO2003010829A1 (fr) 2003-02-06

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Legal Events

Date Code Title Description
TP Transmission of property

Owner name: SOFRADIR, FR

Effective date: 20130927

ST Notification of lapse

Effective date: 20160331