FR2815359B1 - CLEANING AFTER ENGRAVING DIELECTRIC ASSOCIATED WITH COPPER - Google Patents
CLEANING AFTER ENGRAVING DIELECTRIC ASSOCIATED WITH COPPERInfo
- Publication number
- FR2815359B1 FR2815359B1 FR0013267A FR0013267A FR2815359B1 FR 2815359 B1 FR2815359 B1 FR 2815359B1 FR 0013267 A FR0013267 A FR 0013267A FR 0013267 A FR0013267 A FR 0013267A FR 2815359 B1 FR2815359 B1 FR 2815359B1
- Authority
- FR
- France
- Prior art keywords
- engraving
- copper
- cleaning
- dielectric associated
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013267A FR2815359B1 (en) | 2000-10-17 | 2000-10-17 | CLEANING AFTER ENGRAVING DIELECTRIC ASSOCIATED WITH COPPER |
PCT/FR2001/003141 WO2002033742A1 (en) | 2000-10-17 | 2001-10-11 | Post-etching cleaning of a copper-associated dielectric |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0013267A FR2815359B1 (en) | 2000-10-17 | 2000-10-17 | CLEANING AFTER ENGRAVING DIELECTRIC ASSOCIATED WITH COPPER |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2815359A1 FR2815359A1 (en) | 2002-04-19 |
FR2815359B1 true FR2815359B1 (en) | 2003-05-16 |
Family
ID=8855421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0013267A Expired - Fee Related FR2815359B1 (en) | 2000-10-17 | 2000-10-17 | CLEANING AFTER ENGRAVING DIELECTRIC ASSOCIATED WITH COPPER |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2815359B1 (en) |
WO (1) | WO2002033742A1 (en) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5556482A (en) * | 1991-01-25 | 1996-09-17 | Ashland, Inc. | Method of stripping photoresist with composition containing inhibitor |
US5496491A (en) * | 1991-01-25 | 1996-03-05 | Ashland Oil Company | Organic stripping composition |
JP3160344B2 (en) * | 1991-01-25 | 2001-04-25 | アシュランド インコーポレーテッド | Organic stripping composition |
FR2792737B1 (en) * | 1999-04-26 | 2001-05-18 | Atochem Elf Sa | COMPOSITIONS FOR STRIPPING PHOTORESISTS IN THE MANUFACTURE OF INTEGRATED CIRCUITS |
-
2000
- 2000-10-17 FR FR0013267A patent/FR2815359B1/en not_active Expired - Fee Related
-
2001
- 2001-10-11 WO PCT/FR2001/003141 patent/WO2002033742A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2002033742A1 (en) | 2002-04-25 |
FR2815359A1 (en) | 2002-04-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |