FR2810449A1 - Procede de formation de protuberances cylindriques sur un substrat pour circuits integres - Google Patents

Procede de formation de protuberances cylindriques sur un substrat pour circuits integres Download PDF

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Publication number
FR2810449A1
FR2810449A1 FR0012770A FR0012770A FR2810449A1 FR 2810449 A1 FR2810449 A1 FR 2810449A1 FR 0012770 A FR0012770 A FR 0012770A FR 0012770 A FR0012770 A FR 0012770A FR 2810449 A1 FR2810449 A1 FR 2810449A1
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Prior art keywords
substrate
screening material
forming
galvanizing
integrated circuits
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FR0012770A
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Inventor
Wen Lo Shieh
Yung Cheng Chuang
Ning Huang
Hui Pin Chen
Hua Wen Chiang
Chuang Ming Chang
Feng Chang Tu
Fu Yu Huang
Hsuan Jui Chang
Chia Chieh Hu
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Orient Semiconductor Electronics Ltd
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Orient Semiconductor Electronics Ltd
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Publication of FR2810449A1 publication Critical patent/FR2810449A1/fr
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K3/4007—Surface contacts, e.g. bumps
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Abstract

Ce procédé de formation de protubérances cylindriques sur un substrat pour circuits intégrés comprend les étapes consistant à : former des circuits en cuivre (12) sur une plaquette (11) d'un substrat (1) à l'aide d'un procédé de galvanoplastie; couvrir la plaquette (11) d'un matériau de masquage; former des ouvertures dans le matériau de masquage en alignement avec les circuits en cuivre (12) qui se trouvent sur la plaquette (11); remplir les ouvertures de cuivre pur ou d'un métal à haut point de fusion par un procédé de galvanoplastie pour former des protubérances cylindriques; former une couche (16) d'alliage de soudure sur l'extrémité supérieure de chacune des protubérances cylindriques pour être à niveau avec la surface supérieure dudit matériau de masquage; et retirer le matériau de masquage pour ne laisser que les protubérances cylindriques (17), grâce à quoi l'opération d'accrochage de la matrice au substrat peut être facilitée.

Description

Procéde de formation de protubérances cylindriques sur un substrat pour circuits intégrés le procédé technologique classique des puces à bosses pour connecter une matrice 2' à un substrat l' (voir figures la et 1b), il est nécessaire de former des couches 21' de "métallurgie sous bosses" (UBM) à partir de l'entrée/sortie (E/S) de la matrice 2' et des bosses 22' d'alliage de soudure sur les couches UBM 21', puis de retourner la matrice 2' pour accrocher le substrat l' (des circuits en cuivre 12' ont déjà été formés sur la plaquette 11' du substrat 1'). Ensuite, on insère une matière de remplissage 3' entre 1e substrat l' et la matrice 2'.
Toutefois, les bosses 22' faites d'un alliage de soudure vont fondre dans un procédé à 100---350 degrés Celsius si bien que la force gravitationnelle va abaisser la matrice 2', réduisant ainsi la distance séparant les bosses 22' de la matrice 2' et du substrat l' ce qui accroît par conséquent la difficulté à insérer la matière de remplissage 3'. Par conséquent, ce procédé donne toujours lieu à des bosses cylindriques défectueuses, dont le nombre ne peut pas être réduit.
Par conséquent, un objet de la présente invention est de pro poser un procédé de formation de bosses cylindriques sur un substrat pour circuits intégrés qui peut éviter et réduire les inconvénients sus mentionnés.
La présente invention concerne un procédé de formation de protubérances cylindriques sur un substrat pour circuits intégrés qui comprend les étapes consistant à couvrir le substrat d'un matériau de masquage, former des ouvertures dans le matériau de masquage pour s'aligner avec les circuits en cuivre du substrat, remplir les ouvertures de cuivre pur ou d'un métal à haut point de fusion pour former des bosses cylindriques, puis former une couche d'alliage de soudure au sommet de chacune des bosses cylindriques.
L'invention sera mieux comprise à la lecture de la description détaillée d'un exemple non limitatif illustré par les dessins d'accompa gnement, dans lesquels les figures la et lb illustrent un procédé classique d'encapsu- lation de puces à bosses; les figures 2a, 2b, 2c, 2d, 2e et 2f illustrent un exemple de procédé de formation de protubérances cylindriques sur un substrat pour circuits intégrés; et la figure 3 illustre comment une matrice est accrochée au substrat selon la présente invention au moyen d'une technique de puce à bosses.
En référence aux figures 2a à 2f, le procédé de formation de protubérances cylindriques sur un substrat selon la présente invention comprend les étapes consistant à a. former des circuits en cuivre 12 sur une plaquette 11 d'un substrat 1 à l'aide d'un procédé de galvanoplastie classique (figure 2a); b. couvrir la plaquette 11 d'un matériau de masquage 13 (fi gure 2b), le matériau de masquage 13 ayant une épaisseur égale à la hauteur de la protubérance cylindrique 17 mentionnée plus loin; c. former des ouvertures 14 en alignement avec les circuits en cuivre 12 sur le matériau de masquage 13 (figure 2c); d. remplir les ouvertures 14 de cuivre pur ou d'un métal à haut point de fusion 15 par un procédé de galvanoplastie classique pour former des protubérances cylindriques (figure 2d); e. former une couche d'alliage de soudure sur l'extrémité supérieure de chaque protubérance cylindrique pour être à niveau avec la surface supérieure du matériau de masquage 13 (figure 2e); et f. retirer le matériau de masquage 13 pour ne laisser que les protubérances cylindriques 17 (figure 2f).
Les protubérances cylindriques 17 sont connectées à une ma trice 2 à l'aide d'une technologie de puce à bosses. Etant donné que les protubérances cylindriques 17 sont obtenues par galvanoplastie, la hauteur des protubérances cylindriques 17 peut être contrôlée avec précision, ce qui permet d'obtenir une distance adaptée entre le sub strat 1 et la matrice 2 et donc de faciliter l'insertion de la matière de remplissage. En outre, puisque l'extrémité supérieure de la protubéran ce cylindrique 17 comporte une couche d'alliage de soudure 16, il n'est nécessaire que de former une couche UBM 21 sur la matrice 2 et il n'est plus nécessaire de former des bosses en alliage de soudure sur la matrice 2, ce qui prévient tout risque d'endommager la matrice lors du processus de formation des bosses sur cette dernière.

Claims (1)

REVENDICATION
1. Procédé de formation de protubérances cylindriques sur un substrat pour circuits intégrés qui comprend les étapes consistant à a. former des circuits cuivre (12) sur une plaquette (11) d'un substrat (1) à l'aide d'un procédé de galvanoplastie; b. couvrir ladite plaquette (11) d'un matériau de masquage (13); c. former des ouvertures (14) dans ledit matériau de masqua- ge (13) en alignement avec les circuits en cuivre (12) qui se trouvent sur ladite plaquette (11); d. remplir lesdites ouvertures (14) de cuivre pur ou d'un mé tal à haut point de fusion (15) par un procédé de galvanoplastie pour former des protubérances cylindriques; e. former une couche (16) d'alliage de soudure sur l'extrémité supérieure de chacune desdites protubérances cylindriques pour être à niveau avec la surface supérieure dudit matériau de masquage (13); et f. retirer ledit matériau masquage (13) pour ne laisser que les protubérances cylindriques (17).
FR0012770A 2000-06-15 2000-10-06 Procede de formation de protuberances cylindriques sur un substrat pour circuits integres Pending FR2810449A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW089111780A TW447060B (en) 2000-06-15 2000-06-15 Method for growing a columnar bump on an integrated circuit substrate

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FR2810449A1 true FR2810449A1 (fr) 2001-12-21

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US (1) US6390356B1 (fr)
JP (1) JP2002012997A (fr)
DE (1) DE10051140A1 (fr)
FR (1) FR2810449A1 (fr)
TW (1) TW447060B (fr)

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TW447060B (en) 2001-07-21

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