FR2806743B1 - METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2 - Google Patents
METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2Info
- Publication number
- FR2806743B1 FR2806743B1 FR0003771A FR0003771A FR2806743B1 FR 2806743 B1 FR2806743 B1 FR 2806743B1 FR 0003771 A FR0003771 A FR 0003771A FR 0003771 A FR0003771 A FR 0003771A FR 2806743 B1 FR2806743 B1 FR 2806743B1
- Authority
- FR
- France
- Prior art keywords
- caf2
- single crystals
- growing single
- growing
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/007—Mechanisms for moving either the charge or the heater
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0003771A FR2806743B1 (en) | 2000-03-24 | 2000-03-24 | METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2 |
EP01908872A EP1266053A1 (en) | 2000-03-24 | 2001-02-06 | PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF 2? |
PCT/US2001/003759 WO2001073168A1 (en) | 2000-03-24 | 2001-02-06 | PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF¿2? |
JP2001570876A JP2003528795A (en) | 2000-03-24 | 2001-02-06 | In particular, a method and apparatus for growing a single crystal of CaF2 |
US10/220,029 US6797058B2 (en) | 2000-03-24 | 2001-02-06 | Process and device for growing single crystals, especially of CaF2 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0003771A FR2806743B1 (en) | 2000-03-24 | 2000-03-24 | METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2806743A1 FR2806743A1 (en) | 2001-09-28 |
FR2806743B1 true FR2806743B1 (en) | 2002-06-28 |
Family
ID=8848469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0003771A Expired - Fee Related FR2806743B1 (en) | 2000-03-24 | 2000-03-24 | METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1266053A1 (en) |
JP (1) | JP2003528795A (en) |
FR (1) | FR2806743B1 (en) |
WO (1) | WO2001073168A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1337696A1 (en) | 2000-10-13 | 2003-08-27 | Corning Incorporated | Method and device for producing optical fluoride crystals |
US7033433B2 (en) * | 2003-01-24 | 2006-04-25 | Corning Incorporated | Crystal growth methods |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2591259A (en) * | 1946-09-26 | 1952-04-01 | Selas Corp Of America | Billet heating furnace |
BE567500A (en) * | 1957-05-20 | |||
DE3144284A1 (en) * | 1981-11-07 | 1983-05-19 | Leybold-Heraeus GmbH, 5000 Köln | METHOD, DEVICE AND CONTROL ARRANGEMENT FOR WORKING UP HARD METAL SCRAP BY ALLOYS |
US4649002A (en) * | 1985-04-01 | 1987-03-10 | Kennecott Corporation | System for preventing decomposition of silicon carbide articles during sintering |
DE3644057A1 (en) * | 1986-12-22 | 1988-06-30 | Vaw Ver Aluminium Werke Ag | METHOD AND DEVICE FOR THE THERMAL AND / OR REDUCING TREATMENT OF SOLID, GRAIN AND / OR AGGLOMERED INSERT MATERIALS |
JPH04154686A (en) * | 1990-10-19 | 1992-05-27 | Gakei Denki Seisakusho:Kk | Multistage crucible and production of compound semiconductor single crystal using the same multistage crucible |
JP4154744B2 (en) * | 1997-12-01 | 2008-09-24 | 株式会社ニコン | Calcium fluoride crystal production method and raw material treatment method |
-
2000
- 2000-03-24 FR FR0003771A patent/FR2806743B1/en not_active Expired - Fee Related
-
2001
- 2001-02-06 EP EP01908872A patent/EP1266053A1/en not_active Withdrawn
- 2001-02-06 JP JP2001570876A patent/JP2003528795A/en not_active Withdrawn
- 2001-02-06 WO PCT/US2001/003759 patent/WO2001073168A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2806743A1 (en) | 2001-09-28 |
JP2003528795A (en) | 2003-09-30 |
EP1266053A1 (en) | 2002-12-18 |
WO2001073168A1 (en) | 2001-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |