FR2806743B1 - METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2 - Google Patents

METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2

Info

Publication number
FR2806743B1
FR2806743B1 FR0003771A FR0003771A FR2806743B1 FR 2806743 B1 FR2806743 B1 FR 2806743B1 FR 0003771 A FR0003771 A FR 0003771A FR 0003771 A FR0003771 A FR 0003771A FR 2806743 B1 FR2806743 B1 FR 2806743B1
Authority
FR
France
Prior art keywords
caf2
single crystals
growing single
growing
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0003771A
Other languages
French (fr)
Other versions
FR2806743A1 (en
Inventor
Patrick Herve
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Priority to FR0003771A priority Critical patent/FR2806743B1/en
Priority to EP01908872A priority patent/EP1266053A1/en
Priority to PCT/US2001/003759 priority patent/WO2001073168A1/en
Priority to JP2001570876A priority patent/JP2003528795A/en
Priority to US10/220,029 priority patent/US6797058B2/en
Publication of FR2806743A1 publication Critical patent/FR2806743A1/en
Application granted granted Critical
Publication of FR2806743B1 publication Critical patent/FR2806743B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007Mechanisms for moving either the charge or the heater
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001Continuous growth
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/12Halides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR0003771A 2000-03-24 2000-03-24 METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2 Expired - Fee Related FR2806743B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0003771A FR2806743B1 (en) 2000-03-24 2000-03-24 METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2
EP01908872A EP1266053A1 (en) 2000-03-24 2001-02-06 PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF 2?
PCT/US2001/003759 WO2001073168A1 (en) 2000-03-24 2001-02-06 PROCESS AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY OF CaF¿2?
JP2001570876A JP2003528795A (en) 2000-03-24 2001-02-06 In particular, a method and apparatus for growing a single crystal of CaF2
US10/220,029 US6797058B2 (en) 2000-03-24 2001-02-06 Process and device for growing single crystals, especially of CaF2

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0003771A FR2806743B1 (en) 2000-03-24 2000-03-24 METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2

Publications (2)

Publication Number Publication Date
FR2806743A1 FR2806743A1 (en) 2001-09-28
FR2806743B1 true FR2806743B1 (en) 2002-06-28

Family

ID=8848469

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0003771A Expired - Fee Related FR2806743B1 (en) 2000-03-24 2000-03-24 METHOD AND DEVICE FOR GROWING SINGLE CRYSTALS, ESPECIALLY CaF2

Country Status (4)

Country Link
EP (1) EP1266053A1 (en)
JP (1) JP2003528795A (en)
FR (1) FR2806743B1 (en)
WO (1) WO2001073168A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1337696A1 (en) 2000-10-13 2003-08-27 Corning Incorporated Method and device for producing optical fluoride crystals
US7033433B2 (en) * 2003-01-24 2006-04-25 Corning Incorporated Crystal growth methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2591259A (en) * 1946-09-26 1952-04-01 Selas Corp Of America Billet heating furnace
BE567500A (en) * 1957-05-20
DE3144284A1 (en) * 1981-11-07 1983-05-19 Leybold-Heraeus GmbH, 5000 Köln METHOD, DEVICE AND CONTROL ARRANGEMENT FOR WORKING UP HARD METAL SCRAP BY ALLOYS
US4649002A (en) * 1985-04-01 1987-03-10 Kennecott Corporation System for preventing decomposition of silicon carbide articles during sintering
DE3644057A1 (en) * 1986-12-22 1988-06-30 Vaw Ver Aluminium Werke Ag METHOD AND DEVICE FOR THE THERMAL AND / OR REDUCING TREATMENT OF SOLID, GRAIN AND / OR AGGLOMERED INSERT MATERIALS
JPH04154686A (en) * 1990-10-19 1992-05-27 Gakei Denki Seisakusho:Kk Multistage crucible and production of compound semiconductor single crystal using the same multistage crucible
JP4154744B2 (en) * 1997-12-01 2008-09-24 株式会社ニコン Calcium fluoride crystal production method and raw material treatment method

Also Published As

Publication number Publication date
FR2806743A1 (en) 2001-09-28
JP2003528795A (en) 2003-09-30
EP1266053A1 (en) 2002-12-18
WO2001073168A1 (en) 2001-10-04

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