FR2797349B1 - Composant a elements mono-electron et dispositif quantique, ainsi que procede industriel de realisation et reacteur multichambres de mise en oeuvre - Google Patents
Composant a elements mono-electron et dispositif quantique, ainsi que procede industriel de realisation et reacteur multichambres de mise en oeuvreInfo
- Publication number
- FR2797349B1 FR2797349B1 FR9910116A FR9910116A FR2797349B1 FR 2797349 B1 FR2797349 B1 FR 2797349B1 FR 9910116 A FR9910116 A FR 9910116A FR 9910116 A FR9910116 A FR 9910116A FR 2797349 B1 FR2797349 B1 FR 2797349B1
- Authority
- FR
- France
- Prior art keywords
- mono
- reactor
- well
- component
- production method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000009776 industrial production Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7613—Single electron transistors; Coulomb blockade devices
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9910116A FR2797349B1 (fr) | 1999-08-04 | 1999-08-04 | Composant a elements mono-electron et dispositif quantique, ainsi que procede industriel de realisation et reacteur multichambres de mise en oeuvre |
AU70055/00A AU7005500A (en) | 1999-08-04 | 2000-07-21 | Component with monoelectron elements and quantum device, industrial method for producing the same and multi-chamber reactor for carrying out said method |
PCT/FR2000/002099 WO2001011689A1 (fr) | 1999-08-04 | 2000-07-21 | Composant a elements mono-electron et dispositif quantique, ainsi que procede industriel de realisation et reacteur multichambres de mise en oeuvre |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9910116A FR2797349B1 (fr) | 1999-08-04 | 1999-08-04 | Composant a elements mono-electron et dispositif quantique, ainsi que procede industriel de realisation et reacteur multichambres de mise en oeuvre |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2797349A1 FR2797349A1 (fr) | 2001-02-09 |
FR2797349B1 true FR2797349B1 (fr) | 2002-03-08 |
Family
ID=9548876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9910116A Expired - Fee Related FR2797349B1 (fr) | 1999-08-04 | 1999-08-04 | Composant a elements mono-electron et dispositif quantique, ainsi que procede industriel de realisation et reacteur multichambres de mise en oeuvre |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU7005500A (fr) |
FR (1) | FR2797349B1 (fr) |
WO (1) | WO2001011689A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2992774B1 (fr) | 2012-06-29 | 2015-12-25 | Inst Nat Sciences Appliq | Capteur de molecule integrable dans un terminal mobile |
US20190194016A1 (en) * | 2016-09-29 | 2019-06-27 | Intel Corporation | Quantum computing assemblies |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2749977B1 (fr) * | 1996-06-14 | 1998-10-09 | Commissariat Energie Atomique | Transistor mos a puits quantique et procedes de fabrication de celui-ci |
EP0843361A1 (fr) * | 1996-11-15 | 1998-05-20 | Hitachi Europe Limited | Dispositif de mémoire |
AU3818997A (en) * | 1997-07-25 | 1999-02-16 | Regents Of The University Of Minnesota | Single-electron floating-gate mos memory |
-
1999
- 1999-08-04 FR FR9910116A patent/FR2797349B1/fr not_active Expired - Fee Related
-
2000
- 2000-07-21 AU AU70055/00A patent/AU7005500A/en not_active Abandoned
- 2000-07-21 WO PCT/FR2000/002099 patent/WO2001011689A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
AU7005500A (en) | 2001-03-05 |
FR2797349A1 (fr) | 2001-02-09 |
WO2001011689A1 (fr) | 2001-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |