FR2788159A1 - Fabrication of miniaturized planar read head with high magneto-resistance - Google Patents
Fabrication of miniaturized planar read head with high magneto-resistance Download PDFInfo
- Publication number
- FR2788159A1 FR2788159A1 FR9900158A FR9900158A FR2788159A1 FR 2788159 A1 FR2788159 A1 FR 2788159A1 FR 9900158 A FR9900158 A FR 9900158A FR 9900158 A FR9900158 A FR 9900158A FR 2788159 A1 FR2788159 A1 FR 2788159A1
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- Prior art keywords
- layers
- giant magnetoresistance
- layer
- spacer
- spacers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Abstract
Description
PROCEDE DE FABRICATION D'UNE TETE DE LECTUREMETHOD FOR MANUFACTURING A READING HEAD
PLANAIRE MINIATURISEE A MAGNETORESISTANCE MINIATURIZED PLANAR WITH MAGNETORESISTANCE
GEANTE.GIANT.
DESCRIPTIONDESCRIPTION
Domaine technique La présente invention a pour objet un procédé de fabrication d'une Technical Field The subject of the present invention is a method for manufacturing a
tête de lecture planaire miniaturisée à magnétorésistance géante. Miniaturized planar read head with giant magnetoresistance.
Ce procédé de fabrication est utilisable en particulier pour la This manufacturing process can be used in particular for the
réalisation de têtes de lecture pour l'enregistrement magnétique. production of read heads for magnetic recording.
Etat de l'art antérieur.State of the prior art.
Pour réaliser une tête d'enregistrement planaire, il est souvent fait appel aux techniques dites d'espaceur, bien connues de l'homme de l'art en technologie de circuits intégrés. Cette technique est appelée dans le langage anglo-saxon (" Low doped drain: LDD". Elle consiste à réaliser un premier dopage des contacts dans le silicium, en utilisant la grille comme masque, puis de déposer sur le flanc de la grille, une couche mince qui élargira la taille de la grille, afin de pratiquer un second dopage décalé par rapport au premier d'une longueur égale à l'épaisseur de la To make a planar recording head, often called so-called spacer techniques, well known to those skilled in the art in integrated circuit technology, are used. This technique is called in Anglo-Saxon language ("Low doped drain: LDD". It consists in carrying out a first doping of the contacts in silicon, using the grid as a mask, then to deposit on the side of the grid, a thin layer which will enlarge the size of the grid, in order to practice a second doping offset from the first of a length equal to the thickness of the
couche mince déposée sur le flanc de la grille. thin layer deposited on the side of the grid.
Ce même procédé, est utilisé également pour fabriquer l'entrefer d'une tête d'enregistrement planaire, comme décrit, parmi d'autres procédés, dans le brevet N 854001369 du 28 Janvier 1985. On voit sur la figure 1 une marche 32, sur laquelle une couche mince 34 a été déposée, puis gravée verticalement. Après enlèvement de la couche 32 qui servait de marche, la figure 2 montre l'espaceur 33 ainsi obtenu, qui This same process is also used to fabricate the air gap of a planar recording head, as described, among other processes, in patent N 854001369 of January 28, 1985. We see in FIG. 1 a step 32, on which a thin layer 34 has been deposited, then etched vertically. After removal of the layer 32 which served as a step, FIG. 2 shows the spacer 33 thus obtained, which
constituera l'entrefer de la tête.will constitute the air gap of the head.
Bien que satisfaisant à certains égards, ces procédés dits d'espaceur qui permettent de réaliser un motif de dimension bien inférieure à ce que les procédés conventionnels de photolithographie offriraient, ne permettent pas d'autoaligner d'autres motifs de petites dimensions, par rapport à l'espaceur. L'objet de la présente invention, est un procédé de fabrication d'une tête à magnétorésistance géante, ou à valve de spin, telle que décrite dans la demande de brevet N 9815450 du 3 Décembre 1998, qui inclut un espaceur de petite dimension, ainsi que d'autres motifs, obtenus notamment par gravure, de petite dimension qui doivent être autoalignés par rapport à l'espaceur. Cette tête à magnétorésistance géante, est montrée en coupe sur la figure 3, Les parties qui la composent sont extrêmement miniaturisées. La structure de la tête, nécessite un autoalignement des deux rubans 202 et 203 à magnétorésistance géante, dont les largeurs (L) de petite dimension, doivent être strictement identiques. Elle nécessite également que l'espaceur ou le monopole 201 de faible épaisseur, soit bien centré par rapport aux deux rubans 202 et 203, tout en étant isolé par des espaces identiques 207, 208 situés de part et d'autre du monopole Exposé de l'invention Le procédé selon l'invention comporte la réalisation d'un premier espaceur, entouré de deux autres espaceurs de dimensions identiques, les trois espaceurs étant sacrificiel, et servent de masque à la gravure de couches sous jacentes, pour former les deux rubans (202, 203), ainsi que Although satisfactory in certain respects, these so-called spacer methods which make it possible to produce a pattern of dimension much smaller than what conventional photolithography methods would offer, do not make it possible to self-align other patterns of small dimensions, relative to the spacer. The object of the present invention is a process for manufacturing a giant magnetoresistance head, or a spin valve, as described in patent application N 9815450 of December 3, 1998, which includes a small spacer, as well as other patterns, obtained in particular by etching, of small size which must be self-aligned with respect to the spacer. This giant magnetoresistance head is shown in section in Figure 3. The parts that make it up are extremely miniaturized. The structure of the head requires a self-alignment of the two ribbons 202 and 203 with giant magnetoresistance, the widths (L) of small dimension, must be strictly identical. It also requires that the spacer or the thin monopoly 201, be well centered with respect to the two tapes 202 and 203, while being isolated by identical spaces 207, 208 located on either side of the monopoly. 'invention The method according to the invention comprises the production of a first spacer, surrounded by two other spacers of identical dimensions, the three spacers being sacrificial, and serve as a mask for the etching of underlying layers, to form the two ribbons ( 202, 203), as well as
le monopole (201).the monopoly (201).
De façon plus précise, le procédé selon l'invention, comporte la réalisation d'un premier espaceur, qui sera recouvert d'une couche formant deux espaceurs situés de part et d'autre du premier espaceur. La nature du matériau constituant le premier espaceur est choisie pour être gravable sélectivement par rapport à la couche constituant les deux More specifically, the method according to the invention comprises the production of a first spacer, which will be covered with a layer forming two spacers located on either side of the first spacer. The nature of the material constituting the first spacer is chosen to be selectively etchable with respect to the layer constituting the two
espaceurs de part et d'autre du premier espaceur. spacers on either side of the first spacer.
L'ensemble est ensuite utilisé comme un masque, pour graver les couches formant la magnétorésistance géante, afin de former un seul ruban, de largeur égale à celle des trois espaceurs, et dont l'espaceur The assembly is then used as a mask, to etch the layers forming the giant magnetoresistance, in order to form a single ribbon, of width equal to that of the three spacers, and of which the spacer
central sera parfaitement positionné au centre de ce ruban. central will be perfectly positioned in the center of this ribbon.
Le tout est recouvert par une couche épaisse. Cette couche est planarisée, afin d'ouvrir le premier espaceur. Ce premier espaceur va être gravé sélectivement, par rapport aux deux autres espaceurs qui l'entourent. Le sillon laissé par la gravure du premier espaceur, va servir de masque à la gravure plus profonde des couches sous jacentes, formant la magnétorésistance géante, qui après gravure constitueront les deux The whole is covered by a thick layer. This layer is planarized, in order to open the first spacer. This first spacer will be selectively etched relative to the other two spacers which surround it. The groove left by the engraving of the first spacer, will serve as a mask for the deeper engraving of the underlying layers, forming the giant magnetoresistance, which after engraving will constitute the two
rubans (202, 203).ribbons (202, 203).
L'intérieur du sillon constitué par la gravure des couches formant la magnétorésistance géante, est recouvert sur ses flancs d'une couche mince diélectrique, puis le sillon est comblé par du matériau magnétique, pour former le monopole (201) Les caractéristiques de l'invention apparaîtront mieux à la lumière The interior of the groove formed by the etching of the layers forming the giant magnetoresistance, is covered on its flanks with a thin dielectric layer, then the groove is filled with magnetic material, to form the monopoly (201) The characteristics of the invention will appear better in light
de la description qui va suivre.of the description which follows.
Brève description des dessins.Brief description of the drawings.
* Les figures 1,2, déjà décrites montrent des exemples de l'art antérieur. * La figure 3 montre la structure de la tête à magnétorésistance * Figures 1,2, already described show examples of the prior art. * Figure 3 shows the structure of the magnetoresistive head
géante à réaliser, selon le procédé de l'invention. giant to make, according to the method of the invention.
+ Les figures 4 à 15, montrent les différentes étapes du procédé de + Figures 4 to 15 show the different stages of the
réalisation, selon l'invention.embodiment, according to the invention.
Exposé détaillé du procédé de fabrication. Detailed description of the manufacturing process.
Sur un substrat isolant (401) comme du SiO2 ou de l'alumine,par exemple, on dépose l'ensemble des couches (402) formant la magnétorésistance géante comme montré sur la figure 4, selon des On an insulating substrate (401) such as SiO2 or alumina, for example, all of the layers (402) forming the giant magnetoresistance are deposited as shown in FIG. 4,
procédés bien connus de l'homme de l'art. methods well known to those skilled in the art.
Les couches (402) sont ensuite gravées selon les techniques connues de l'homme de l'art, pour former un ruban de largeur égale à quelques microns, comme le montre la figure 5. Ces couches sont ensuite protégées par une couche mince diélectrique (501) de SiO2 ou d'alumine par exemple, qui après planarisation, aura une épaisseur bien controlée, au dessus des couches (402). Cette couche diélectrique est ensuite revêtue d'une couche fine (502), d'arrêt de planarisation, choisie pour résister à la planarisation finale comme décrite plus loin. La nature de The layers (402) are then etched according to techniques known to those skilled in the art, to form a ribbon of width equal to a few microns, as shown in FIG. 5. These layers are then protected by a thin dielectric layer ( 501) of SiO2 or alumina for example, which after planarization, will have a well-controlled thickness, above the layers (402). This dielectric layer is then coated with a thin layer (502), of planarization stop, chosen to resist the final planarization as described below. The nature of
cette couche peut être avantageusement du tungstène. this layer can advantageously be tungsten.
On réalise le support (601) en résine photosensible du premier espaceur comme le montre la figure 6, selon les procédés connus de l'homme de l'art. La marche qui constitue le support d'espaceur, obtenue par photolithographie, se situe aux environs du centre du ruban constitué The support (601) is made of photosensitive resin of the first spacer as shown in Figure 6, according to methods known to those skilled in the art. The step which constitutes the spacer support, obtained by photolithography, is located around the center of the ribbon formed
par les couches magnétorésistantes géantes. by the giant magnetoresistive layers.
Sur ce support d'espaceur, on dépose une couche mince, qui peut avantageusement être en aluminium, ou tout autre matériau, choisi pour constituer l'espaceur (701), comme le montre la figure 7, offrant une gravure sélective par rapport aux deux autres espaceurs qui l'entourera par la suite. Par enlèvement du support d'espaceur (601), il reste l'espaceur (701) situé environ au centre du ruban constitué par les On this spacer support, a thin layer is deposited, which can advantageously be made of aluminum, or any other material, chosen to constitute the spacer (701), as shown in FIG. 7, offering selective etching with respect to the two. other spacers which will surround it thereafter. By removing the spacer support (601), there remains the spacer (701) located approximately in the center of the ribbon formed by the
couches magnétorésistantes géantes, comme le montre la figure 8. giant magnetoresistive layers, as shown in Figure 8.
On dépose ensuite sur cet espaceur une couche mince de SiO2 ou d'alumine, que l'on grave pour obtenir comme le montre la figure 9 un double espaceur (901,902) autour du premier espaceur (701). Notons que l'épaisseur de la couche de SiO2 ou d'alumine, déposée sur les flancs du premier espaceur (701), constituera la largeur (L) des deux rubans à A thin layer of SiO2 or alumina is then deposited on this spacer, which is etched to obtain, as shown in FIG. 9, a double spacer (901.902) around the first spacer (701). Note that the thickness of the layer of SiO2 or alumina, deposited on the sides of the first spacer (701), will constitute the width (L) of the two ribbons to
1 5 magnétorésistance géante, comme montré sur la figure 3. 1 5 giant magnetoresistance, as shown in figure 3.
On grave ensuite l'ensemble des couches formant la magnétorésistance géante, par usinage ionique, en utilisant les doubles Then the set of layers forming the giant magnetoresistance is etched, by ionic machining, using the double
espaceurs (901, 902), comme masque, comme le montre la figure 10. spacers (901, 902), as a mask, as shown in Figure 10.
Ainsi, le premier espaceur (701) sera parfaitement centré par rapport aux bords (1001, 1002) du ruban formant les couches de la magnétorésistance Thus, the first spacer (701) will be perfectly centered relative to the edges (1001, 1002) of the tape forming the layers of the magnetoresistance
géante, comme le montre la figure 10. giant, as shown in Figure 10.
On réalise ensuite un dépôt épais de SiO2, ou d'alumine par exemple, d'encapsulation, que l'on planarise, afin d'ouvrir le premier espaceur (701) comme le montre la figure 11. On grave ensuite sélectivement le premier espaceur (701) en gravant l'aluminium par exemple qui le constitue, par gravure chimique bien connue de l'homme A thick deposit of SiO2, or of alumina for example, of encapsulation, which is planarized, is then carried out in order to open the first spacer (701) as shown in FIG. 11. The first spacer is then selectively etched (701) by etching the aluminum, for example which constitutes it, by chemical etching well known to man
de l'art. Cette gravure, s'arrête sur la couche (502), de la figure 5. art. This engraving stops on the layer (502) of FIG. 5.
Après enlèvement de l'espaceur (701), on utilise le sillon ainsi formé dans le SiO2, ou l'alumine, comme masque pour graver plus en profondeur les couches constituant la magnétorésistance géante comme le montre la figure 12. Le ruban constitué des couches à magnétorésistance géante, est ainsi gravé dans sa longueur et forme ainsi deux rubans (202, 203) de largeur (L) précisément égales à l'épaisseur des deux espaceurs (901,902), et situés parfaitement symétriquement par rapport au sillon After removal of the spacer (701), the groove thus formed in SiO2 or alumina is used as a mask to etch more deeply the layers constituting the giant magnetoresistance as shown in Figure 12. The ribbon consisting of the layers with giant magnetoresistance, is thus etched in its length and thus forms two ribbons (202, 203) of width (L) precisely equal to the thickness of the two spacers (901,902), and located perfectly symmetrically with respect to the groove
(120) de la figure 12, de largeur (e), comme montré sur la figure 3. (120) of FIG. 12, of width (e), as shown in FIG. 3.
On dépose ensuite une couche mince diélectrique, comme du SiO2ou de l'alumine par exemple, (207,208) d'épaisseur égale a quelques centaine d'angstrôms qui recouvrira l'intérieur du sillon (120), comme le A thin dielectric layer is then deposited, such as SiO 2 or alumina for example, (207.208) of thickness equal to a few hundred angstroms which will cover the interior of the groove (120), like the
montre la figure 13.shows figure 13.
Puis on dépose une couche de matériau magnétique (140) que l'on voit sur la figure 14, que l'on planarise en s'appuyant sur la couche arrêt de planarisation (502) déposée au début du procédé, comme montré sur la figure 5. On obtient donc la structure finale représentée sur la figure , avec le monopole (201). La distance (H) qui sépare les rubans (202, 203) de la surface 150, est très précise, car elle est constituée de la couche (501) de la figure 5, au dessus des couches (202,203) Il faut noter que la tête à magnétorésistance de la figure 3 a pu être réalisée par le procédé selon l'invention, sans faire appel à des Then a layer of magnetic material (140) which is seen in FIG. 14 is deposited, which is planarized by resting on the planarization stop layer (502) deposited at the start of the process, as shown in the figure. 5. We therefore obtain the final structure shown in the figure, with the monopoly (201). The distance (H) which separates the ribbons (202, 203) from the surface 150, is very precise, because it consists of the layer (501) of FIG. 5, above the layers (202,203) It should be noted that the magnetoresistor head of Figure 3 could be achieved by the method according to the invention, without using any
technologies de photolithographie submicroniques. submicron photolithography technologies.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9900158A FR2788159B1 (en) | 1999-01-06 | 1999-01-06 | METHOD FOR MANUFACTURING A MINIATURIZED PLANAR READING HEAD WITH Giant MAGNETORESISTANCE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9900158A FR2788159B1 (en) | 1999-01-06 | 1999-01-06 | METHOD FOR MANUFACTURING A MINIATURIZED PLANAR READING HEAD WITH Giant MAGNETORESISTANCE |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2788159A1 true FR2788159A1 (en) | 2000-07-07 |
| FR2788159B1 FR2788159B1 (en) | 2001-02-09 |
Family
ID=9540724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9900158A Expired - Fee Related FR2788159B1 (en) | 1999-01-06 | 1999-01-06 | METHOD FOR MANUFACTURING A MINIATURIZED PLANAR READING HEAD WITH Giant MAGNETORESISTANCE |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2788159B1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4731157A (en) * | 1984-02-03 | 1988-03-15 | Commissariat A L'energie Atomique | Process for the production of a magnetic head for perpendicular recording |
| US5196976A (en) * | 1989-03-29 | 1993-03-23 | Commissariat A L'energie Atomique | Magnetoresistance magnetic head for perpendicular recording on a magnetic support |
| US5528440A (en) * | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
| DE19811857A1 (en) * | 1997-03-18 | 1998-10-08 | Toshiba Kawasaki Kk | Magneto-resistive head for magnetic recording apparatus |
-
1999
- 1999-01-06 FR FR9900158A patent/FR2788159B1/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4731157A (en) * | 1984-02-03 | 1988-03-15 | Commissariat A L'energie Atomique | Process for the production of a magnetic head for perpendicular recording |
| US5196976A (en) * | 1989-03-29 | 1993-03-23 | Commissariat A L'energie Atomique | Magnetoresistance magnetic head for perpendicular recording on a magnetic support |
| US5528440A (en) * | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
| DE19811857A1 (en) * | 1997-03-18 | 1998-10-08 | Toshiba Kawasaki Kk | Magneto-resistive head for magnetic recording apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2788159B1 (en) | 2001-02-09 |
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