FR2776137A1 - Protective circuit for use in the transmission line for analogue signals - Google Patents

Protective circuit for use in the transmission line for analogue signals Download PDF

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Publication number
FR2776137A1
FR2776137A1 FR9802909A FR9802909A FR2776137A1 FR 2776137 A1 FR2776137 A1 FR 2776137A1 FR 9802909 A FR9802909 A FR 9802909A FR 9802909 A FR9802909 A FR 9802909A FR 2776137 A1 FR2776137 A1 FR 2776137A1
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FR
France
Prior art keywords
line
amplifier
amplifier element
protection circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9802909A
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French (fr)
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FR2776137B1 (en
Inventor
Norbert Boigues
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Priority to FR9802909A priority Critical patent/FR2776137B1/en
Priority to PCT/EP1999/001393 priority patent/WO1999046842A1/en
Priority to DE59914959T priority patent/DE59914959D1/en
Priority to JP54535099A priority patent/JP3983307B2/en
Priority to EP99914470A priority patent/EP0981848B1/en
Priority to US09/423,791 priority patent/US6529358B1/en
Publication of FR2776137A1 publication Critical patent/FR2776137A1/en
Application granted granted Critical
Publication of FR2776137B1 publication Critical patent/FR2776137B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • H02H9/025Current limitation using field effect transistors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)

Abstract

Signals (RVB) from a computer are fed to a pre-amplifier stage (PT,R1). Its output is fed to the base of a transistor (T2) acting as an amplifier with collector and emitter resistors (LR1,LR2) selected so that the collector voltage level of a series transistor (T1) is equal to the signal voltage. A diode (D) is connected between base and emitter of the series transistor so that normally it is non-conducting

Description

La présente invention concerne un circuit de protection, à placer entre unThe present invention relates to a protection circuit, to be placed between a

générateurgenerator

de signal analogique et une ligne de transmission de ce signal.  analog signal and a transmission line for this signal.

Un tel circuit est utilisé par exemple dans un véhicule routier, o existe un risque  Such a circuit is used for example in a road vehicle, where there is a risk

important de chocs électriques sur les lignes.  significant electric shock on the lines.

Un circuit de protection est connu du document DE-OS-28 12 157. Selon ce document, un transistor de commutation est associé à un transistor auxiliaire commandé en conduction par un signal aux bornes d'une résistance de mesure du courant, qui  A protection circuit is known from document DE-OS-28 12 157. According to this document, a switching transistor is associated with an auxiliary transistor controlled in conduction by a signal at the terminals of a current measurement resistor, which

ajoute du courant dans la base du transistor de commutation.  adds current to the base of the switching transistor.

Un objet de l'invention est de rendre encore plus efficace le circuit.  An object of the invention is to make the circuit even more efficient.

A cet effet, le circuit de protection comporte d'une part un premier élément amplificateur semi-conducteur monté à la fois en amplificateur conventionnel avec un premier élément de charge et en suiveur avec un second élément de charge, et d'autre part un second élément amplificateur semi-conducteur de même type de conduction que le premier, dont une électrode de réception de courant est branchée au premier élément amplificateur du côté du second élément de charge, une électrode de fourniture de courant débite vers la ligne, et une électrode de commande est reliée par une résistance  To this end, the protection circuit comprises on the one hand a first semiconductor amplifier element mounted both as a conventional amplifier with a first load element and as a follower with a second load element, and on the other hand a second semiconductor amplifier element of the same conduction type as the first, of which a current receiving electrode is connected to the first amplifier element on the side of the second charging element, a current supply electrode delivered to the line, and a control is connected by a resistor

au premier élément amplificateur du côté du premier élément de charge.  to the first amplifier element on the side of the first load element.

Ces aspects de l'invention ainsi que d'autres aspects plus détaillés apparaîtront plus  These aspects of the invention as well as other more detailed aspects will appear more clearly.

clairement grâce à la description suivante d'un mode de réalisation constituant un  clearly through the following description of an embodiment constituting a

exemple non limitatif.nonlimiting example.

La figure 1 représente un véhicule routier.  Figure 1 shows a road vehicle.

La figure 2 est un schéma d'un mode de réalisation du circuit.  FIG. 2 is a diagram of an embodiment of the circuit.

Le véhicule 1 de la figure 1 est muni d'une unité centrale génératrice d'un signal analogique et d'une ligne de transmission de ce signal qui aboutit à un périphérique incorporé au tableau de bord DB du véhicule. L'unité centrale CU est par exemple le calculateur d'un appareil de navigation qui délivre des signaux RVB de composantes de couleur pour un afficheur, la ligne est par exemple une ligne bipolaire blindée LI (une  The vehicle 1 in FIG. 1 is provided with a central unit generating an analog signal and a line for transmitting this signal which terminates in a peripheral incorporated in the dashboard DB of the vehicle. The central processing unit CU is for example the computer of a navigation device which delivers RGB signals of color components for a display, the line is for example a shielded bipolar line LI (a

par couleur), et le périphérique est par exemple un afficheur à cristaux liquides DISP.  by color), and the device is for example a DISP liquid crystal display.

Le circuit de la figure 2 est alimenté par une tension VCC par exemple de 12 volts. Il est à insérer entre une borne d'entrée RVB, sur laquelle le calculateur CU fournit un signal, et la ligne LI. Le signal de la borne d'entrée est appliqué à un étage préamplificateur connu en soi, constitué d'un transistor PT monté en suiveur avec une résistance de charge R1. Le signal issu de cet étage préamplificateur est appliqué à  The circuit of FIG. 2 is supplied by a voltage VCC for example of 12 volts. It is to be inserted between an RGB input terminal, on which the CU computer provides a signal, and the LI line. The signal from the input terminal is applied to a preamplifier stage known per se, consisting of a transistor PT mounted as a follower with a load resistor R1. The signal from this preamplifier stage is applied to

l'électrode de commande, ici la base, d'un premier élément amplificateur semi-  the control electrode, here the base, of a first semi-amplifier element

conducteur, ici un transistor bipolaire T1 de type NPN, monté à la fois en amplificateur conventionnel avec un premier élément de charge, ici la résistance LR1 placée dans la connexion de collecteur, et en suiveur avec un second élément de charge, ici la résistance LR2 placée dans la connexion d'émetteur. D'autre part un second élément amplificateur semiconducteur de même type de conduction que le premier, ici un transistor T2 de type NPN, possède une électrode de réception de courant, à savoir son collecteur, branchée au premier élément amplificateur Tl du côté du second élément de charge LR2, une électrode de fourniture de courant, à savoir son émetteur, débitant vers la ligne LI, et une électrode de commande, à savoir sa base, reliée par une résistance au premier élément amplificateur T1 du côté du premier élément de charge LR1. Si par exemple la ligne LI était en court-circuit avec la masse, un courant excessif dans LR1 ferait chuter la tension au point 2, donc aussi la tension de base de T3,  conductor, here a bipolar transistor T1 of the NPN type, mounted both as a conventional amplifier with a first load element, here the resistor LR1 placed in the collector connection, and as a follower with a second load element, here the resistor LR2 placed in the transmitter connection. On the other hand a second semiconductor amplifier element of the same type of conduction as the first, here a transistor T2 of NPN type, has a current receiving electrode, namely its collector, connected to the first amplifier element Tl on the side of the second element. of charge LR2, a current supply electrode, namely its transmitter, delivering to the line LI, and a control electrode, namely its base, connected by a resistor to the first amplifier element T1 on the side of the first charge element LR1 . If for example the line LI was in short-circuit with the ground, an excessive current in LR1 would make fall the tension at the point 2, thus also the basic tension of T3,

limitant ainsi le courant fourni à la ligne.  thus limiting the current supplied to the line.

Les transistors bipolaires pourraient éventuellement être remplacés par des transistors à effet de champ. Dans ce cas l'électrode de commande serait appelée grille, l'électrode de réception de courant appelée drain, et l'électrode de fourniture de courant appelée source. Une diode D est branchée entre la ligne LI et la base du second transistor T2, avec sa cathode reliée à la base de T2, donc dans un sens tel qu'elle est bloquée en service normal. Elle aurait un effet de blocage si accidentellement la ligne LI venait en contact avec l'alimentation 12 volts. Un petit modèle suffit car il n'y passe jamais beaucoup de  The bipolar transistors could possibly be replaced by field effect transistors. In this case the control electrode would be called the gate, the current receiving electrode called the drain, and the current supply electrode called the source. A diode D is connected between the line LI and the base of the second transistor T2, with its cathode connected to the base of T2, therefore in a direction such that it is blocked in normal service. It would have a blocking effect if accidentally the LI line came into contact with the 12 volt supply. A small model is enough because it never passes a lot of

courant, du fait qu'elle est en série avec R3.  current, because it is in series with R3.

Le trajet de courant principal du second transistor T2 est shunté par une capacité entre son collecteur et son émetteur, pour court-circuiter la résistance dynamique de ce transistor. Le circuit constitué avec T1 et T12 est suivi d'un filtre passe-bas constitué d'une  The main current path of the second transistor T2 is shunted by a capacitance between its collector and its emitter, to short-circuit the dynamic resistance of this transistor. The circuit formed with T1 and T12 is followed by a low-pass filter consisting of

inductance L en série, et de deux capacités C1 en parallèle.  inductance L in series, and two capacitors C1 in parallel.

Un exemple de réalisation emploie les valeurs suivantes: - Rl = 470 ohms, LR1 et LR2 = 33 ohms, R3 = 4700 ohms - C1 = 1 nF, L= 1 pH  An exemplary embodiment uses the following values: - Rl = 470 ohms, LR1 and LR2 = 33 ohms, R3 = 4700 ohms - C1 = 1 nF, L = 1 pH

- D = 1N4148- D = 1N4148

Claims (4)

REVENDICATIONS:CLAIMS: 1. Circuit de protection, à placer entre un générateur de signal analogique et une ligne de transmission de ce signal, caractérisé en ce qu'il comporte d'une part un premier élément amplificateur semiconducteur monté à la fois en amplificateur conventionnel avec un premier élément de charge et en suiveur avec un second élément de charge, et d'autre part un second élément amplificateur semi-conducteur de même type de conduction que le premier, dont une électrode de réception de courant est branchée au premier élément amplificateur du côté du second élément de charge, une électrode de fourniture de courant débite vers la ligne, et une électrode de commande est reliée par  1. Protection circuit, to be placed between an analog signal generator and a line for transmitting this signal, characterized in that it comprises on the one hand a first semiconductor amplifier element mounted both as a conventional amplifier with a first element charging and in follower with a second charging element, and on the other hand a second semiconductor amplifier element of the same type of conduction as the first, of which a current receiving electrode is connected to the first amplifier element on the side of the second charging element, a current supply electrode flows to the line, and a control electrode is connected by une résistance au premier élément amplificateur du côté du premier élément de charge.  a resistance to the first amplifier element on the side of the first load element. 2. Circuit de protection selon la revendication 1, caractérisé en ce qu'une diode est branchée entre la ligne et l'électrode de commande du second élément amplificateur  2. Protection circuit according to claim 1, characterized in that a diode is connected between the line and the control electrode of the second amplifier element semi-conducteur, dans un sens tel qu'elle est bloquée en service normal.  semiconductor, in a direction such that it is blocked in normal service. 3. Circuit de protection selon la revendication 1, caractérisé en ce que le trajet de courant principal du second élément amplificateur semiconducteur est shunté par une capacité.  3. Protection circuit according to claim 1, characterized in that the main current path of the second semiconductor amplifier element is shunted by a capacitor. 4. Circuit de protection selon la revendication'l, caractérisé en ce qu'il est suivi d'un4. Protection circuit according to claim'l, characterized in that it is followed by a filtre passe-bas à inductance et capacités.  low-pass filter with inductance and capacities.
FR9802909A 1998-03-10 1998-03-10 PROTECTION CIRCUIT TO BE PLACED BETWEEN A SIGNAL GENERATOR AND A CABLE Expired - Fee Related FR2776137B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9802909A FR2776137B1 (en) 1998-03-10 1998-03-10 PROTECTION CIRCUIT TO BE PLACED BETWEEN A SIGNAL GENERATOR AND A CABLE
PCT/EP1999/001393 WO1999046842A1 (en) 1998-03-10 1999-03-04 Protective circuit
DE59914959T DE59914959D1 (en) 1998-03-10 1999-03-04 PROTECTION CIRCUIT
JP54535099A JP3983307B2 (en) 1998-03-10 1999-03-04 Protection circuit
EP99914470A EP0981848B1 (en) 1998-03-10 1999-03-04 Protective circuit
US09/423,791 US6529358B1 (en) 1998-03-10 1999-03-04 Driver protection circuit for preventing damage due to line contact with ground or supply voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9802909A FR2776137B1 (en) 1998-03-10 1998-03-10 PROTECTION CIRCUIT TO BE PLACED BETWEEN A SIGNAL GENERATOR AND A CABLE

Publications (2)

Publication Number Publication Date
FR2776137A1 true FR2776137A1 (en) 1999-09-17
FR2776137B1 FR2776137B1 (en) 2000-07-13

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FR9802909A Expired - Fee Related FR2776137B1 (en) 1998-03-10 1998-03-10 PROTECTION CIRCUIT TO BE PLACED BETWEEN A SIGNAL GENERATOR AND A CABLE

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FR (1) FR2776137B1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292723B (en) * 1963-07-18 1969-04-17 Telefunken Patent Stabilized power supply, especially for remote feeding of the line amplifiers of broadband carrier frequency systems with a voltage stabilization and a current limiting circuit
DE1764713A1 (en) * 1968-07-24 1971-10-07 Telefunken Patent Circuit arrangement for current limitation
DE2812157A1 (en) * 1978-03-20 1979-09-27 Siemens Ag CIRCUIT ARRANGEMENT FOR THE PROTECTION OF ELECTRONIC SENDING AND RECEIVING DEVICES AGAINST OVERCURRENT
EP0505602A1 (en) * 1991-03-28 1992-09-30 Siemens Aktiengesellschaft Protection circuit for the electrical system of a vehicle

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292723B (en) * 1963-07-18 1969-04-17 Telefunken Patent Stabilized power supply, especially for remote feeding of the line amplifiers of broadband carrier frequency systems with a voltage stabilization and a current limiting circuit
DE1764713A1 (en) * 1968-07-24 1971-10-07 Telefunken Patent Circuit arrangement for current limitation
DE2812157A1 (en) * 1978-03-20 1979-09-27 Siemens Ag CIRCUIT ARRANGEMENT FOR THE PROTECTION OF ELECTRONIC SENDING AND RECEIVING DEVICES AGAINST OVERCURRENT
EP0505602A1 (en) * 1991-03-28 1992-09-30 Siemens Aktiengesellschaft Protection circuit for the electrical system of a vehicle

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Publication number Publication date
FR2776137B1 (en) 2000-07-13

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