FR2687480B1 - PHOTOELECTRIC DETECTOR WITH QUANTUM WELLS WITH IMPROVED DETECTIVITY. - Google Patents

PHOTOELECTRIC DETECTOR WITH QUANTUM WELLS WITH IMPROVED DETECTIVITY.

Info

Publication number
FR2687480B1
FR2687480B1 FR9201826A FR9201826A FR2687480B1 FR 2687480 B1 FR2687480 B1 FR 2687480B1 FR 9201826 A FR9201826 A FR 9201826A FR 9201826 A FR9201826 A FR 9201826A FR 2687480 B1 FR2687480 B1 FR 2687480B1
Authority
FR
France
Prior art keywords
photoelectric detector
quantum wells
improved detectivity
detectivity
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9201826A
Other languages
French (fr)
Other versions
FR2687480A1 (en
Inventor
Benoit Deveaud-Pledran
Jean-Michel Gerard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Priority to FR9201826A priority Critical patent/FR2687480B1/en
Priority to US08/018,116 priority patent/US5296699A/en
Priority to DE69303738T priority patent/DE69303738T2/en
Priority to EP93400392A priority patent/EP0557186B1/en
Priority to JP5053073A priority patent/JPH06260672A/en
Publication of FR2687480A1 publication Critical patent/FR2687480A1/en
Application granted granted Critical
Publication of FR2687480B1 publication Critical patent/FR2687480B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035254—Superlattices; Multiple quantum well structures including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System, e.g. Si-SiGe superlattices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
FR9201826A 1992-02-18 1992-02-18 PHOTOELECTRIC DETECTOR WITH QUANTUM WELLS WITH IMPROVED DETECTIVITY. Expired - Fee Related FR2687480B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9201826A FR2687480B1 (en) 1992-02-18 1992-02-18 PHOTOELECTRIC DETECTOR WITH QUANTUM WELLS WITH IMPROVED DETECTIVITY.
US08/018,116 US5296699A (en) 1992-02-18 1993-02-17 Quantum well photoelectric detector with improved detectivity
DE69303738T DE69303738T2 (en) 1992-02-18 1993-02-17 Photoelectric detector with quantum wells and improved detectivity
EP93400392A EP0557186B1 (en) 1992-02-18 1993-02-17 Quantumwell photoelectric detector with enhanced detectivity
JP5053073A JPH06260672A (en) 1992-02-18 1993-02-18 Photoelectric detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9201826A FR2687480B1 (en) 1992-02-18 1992-02-18 PHOTOELECTRIC DETECTOR WITH QUANTUM WELLS WITH IMPROVED DETECTIVITY.

Publications (2)

Publication Number Publication Date
FR2687480A1 FR2687480A1 (en) 1993-08-20
FR2687480B1 true FR2687480B1 (en) 1997-08-14

Family

ID=9426761

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9201826A Expired - Fee Related FR2687480B1 (en) 1992-02-18 1992-02-18 PHOTOELECTRIC DETECTOR WITH QUANTUM WELLS WITH IMPROVED DETECTIVITY.

Country Status (5)

Country Link
US (1) US5296699A (en)
EP (1) EP0557186B1 (en)
JP (1) JPH06260672A (en)
DE (1) DE69303738T2 (en)
FR (1) FR2687480B1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5539206A (en) * 1995-04-20 1996-07-23 Loral Vought Systems Corporation Enhanced quantum well infrared photodetector
US6054718A (en) * 1998-03-31 2000-04-25 Lockheed Martin Corporation Quantum well infrared photocathode having negative electron affinity surface
FR2780203B1 (en) * 1998-06-23 2003-07-04 Thomson Csf QUANTUM WELL DETECTOR WITH PHOTOEXCITED ELECTRON STORAGE LAYER
US6198101B1 (en) 1998-09-08 2001-03-06 Lockheed Martin Corporation Integral charge well for a QWIP FPA
JP4365255B2 (en) * 2004-04-08 2009-11-18 浜松ホトニクス株式会社 Luminescent body, electron beam detector, scanning electron microscope and mass spectrometer using the same
JP5282361B2 (en) * 2007-02-19 2013-09-04 富士通株式会社 Quantum well type photodetector and manufacturing method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873555A (en) * 1987-06-08 1989-10-10 University Of Pittsburgh Of The Commonwealth System Of Higher Education Intraband quantum well photodetector and associated method
US5023673A (en) * 1989-07-21 1991-06-11 At&T Bell Laboratories Semiconductor mesa structured optical processing devices, with added side-surface recombination centers to improve the speed of operation
FR2663787B1 (en) * 1990-06-26 1997-01-31 Thomson Csf ELECTROMAGNETIC WAVE DETECTOR.

Also Published As

Publication number Publication date
FR2687480A1 (en) 1993-08-20
DE69303738D1 (en) 1996-08-29
EP0557186B1 (en) 1996-07-24
EP0557186A1 (en) 1993-08-25
US5296699A (en) 1994-03-22
DE69303738T2 (en) 1997-03-06
JPH06260672A (en) 1994-09-16

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Legal Events

Date Code Title Description
ST Notification of lapse