FR2680279A1 - High-performance thermo-electronic device - Google Patents
High-performance thermo-electronic device Download PDFInfo
- Publication number
- FR2680279A1 FR2680279A1 FR9110258A FR9110258A FR2680279A1 FR 2680279 A1 FR2680279 A1 FR 2680279A1 FR 9110258 A FR9110258 A FR 9110258A FR 9110258 A FR9110258 A FR 9110258A FR 2680279 A1 FR2680279 A1 FR 2680279A1
- Authority
- FR
- France
- Prior art keywords
- thermo
- thin layer
- thin
- electrical
- ito
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000004922 lacquer Substances 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 239000004332 silver Substances 0.000 claims abstract description 3
- 230000008021 deposition Effects 0.000 claims abstract 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 230000005676 thermoelectric effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
DISPOSITIF THERMO-ELECTRONIQUE A HAUTES PERFORMANCES
La présente invention concerne un dispositif thermo-électronique à hautes performances et d'élaboration simple et peu coûteuse, qui peut servir de base à des applications importantes et nombreuses. Parmi ces applications, on peut citer un convertisseur direct d'énergie thermique basse température en énergie électrique et un capteur thermique sensible.HIGH PERFORMANCE THERMO-ELECTRONIC DEVICE
The present invention relates to a thermoelectronic device with high performance and simple and inexpensive development, which can serve as a basis for important and numerous applications. Among these applications, mention may be made of a direct converter of low-temperature thermal energy into electrical energy and a sensitive thermal sensor.
Le fonctionnement de ce dispositif est basé sur un effet thermo-électronique intense à des températures modérées (50-100 OC), de nature différente des effets thermo-électriques classiques, type effet Seebeck. L'intensité du phénomène croft quand la température augmente, sans gradient thermique impose. The operation of this device is based on an intense thermoelectronic effect at moderate temperatures (50-100 OC), different in nature from conventional thermoelectric effects, such as the Seebeck effect. The intensity of the phenomenon croft when the temperature increases, without imposing thermal gradient.
La conversion directe de l'énergie thermique basse température en énergie électrique est un domaine ou l'état de la technique est peu avancé.Elle est basée sur-les effets thermo-électriques classiques, qui donnent des tensions modérées, inférieures au mu/0, et exigeant un gradient thermique. Il en est de meme pour les capteurs de températures. L'intensité du phénomène observé (200 mV en circuit ouvert et 4 mA/cm2en -court-circuit à 70 OC) pmet l'utilisation du dispositif comme convertisseur direct d'énergie thermique basse température en énergie électrique, avec un rendement intéressant. Il permet aussi l'utilisation du dispositif comme capteur thermique sensible. The direct conversion of low-temperature thermal energy into electrical energy is a field where the state of the art is not very advanced.It is based on the classic thermoelectric effects, which give moderate voltages, lower than mu / 0 , and requiring a thermal gradient. The same goes for temperature sensors. The intensity of the observed phenomenon (200 mV in open circuit and 4 mA / cm2 in short circuit at 70 OC) allows the use of the device as a direct converter of low temperature thermal energy into electrical energy, with an interesting yield. It also allows the device to be used as a sensitive thermal sensor.
En plus de ces deux applications, il existe certainement d'autres domaines ou il pourrait entre utilisé.In addition to these two applications, there are certainly other areas where it could be used.
Le dispositif que nous avons élaboré est constitué de couches minces de semiconducteurs et de métaux. Le support peut être une plaque de verre ou métal (Ex: aluminium, molybdène...).Sur le support est déposée une électro- - de d'I.T.O.(Indium Tin Oxide) par une technique spray. Sur l'ITO (sur lequel on réserve une place pour le contact électrique);en dépose une couche mince de (Cd,Zn)S (5 % de ZnS) de quelques rm d'épaisseur,par une technique C.V.D. The device we have developed consists of thin layers of semiconductors and metals. The support can be a glass or metal plate (Ex: aluminum, molybdenum, etc.) On the support is deposited an I.T.O. electrodecord (Indium Tin Oxide) by a spray technique. On the ITO (on which space is reserved for the electrical contact); deposit a thin layer of (Cd, Zn) S (5% ZnS) a few rm thick, using a C.V.D.
(Chemical Vapor Deposition) à courte distance,avec de l'iode cristallisée comme agent de transport. On fait un recuit à 350 OC dans le vide pendant 2 heures pour rendre le (Cd,Zn)S conducteur type n. Puis, sur le (Cd,Zn)S est déposée une couche mince,de quelques e m d'épaisseur,de CuGaSe Te (x=1)
x 2-x par CVD à courte distance. avec l'iode cristalliséecomme agent de transport.(Chemical Vapor Deposition) at close range, with crystallized iodine as the transport agent. Annealing at 350 ° C. in vacuum for 2 hours to make (Cd, Zn) S n-type conductive. Then, on the (Cd, Zn) S is deposited a thin layer, a few em thick, of CuGaSe Te (x = 1)
x 2-x by CVD at short distance. with crystallized iodine as the transport agent.
Cette couche mince est fortement conductrice type p.Les contadts électriques sont constitués par de la laque d'argent étalée au pinceau: un contact sur l'ITO non recouvert par le (Cd,Zn)S et un contact sur le CuGaSe Te2 x . This thin layer is highly conductive type p. The electrical contadts consist of silver lacquer spread with a brush: a contact on the ITO not covered by (Cd, Zn) S and a contact on CuGaSe Te2 x.
Avec ce dispositif, nous avons obtenu une tension en circuit ouvert de 200 mV et un courant de court-circuit de l'ordre du mA/cm2 pour une tempé ture de 70 OC sans gradient thermique apparent. La tension et le courant augmentent quand la température croit. A cet effet thermo-électronique peut s'ajouter éventuellement un effet photovoltaique, dans le cas où le support est le verre et si la lumière arrive au niveau de la jonction (Cd,Zn)S
CuGaSe Te . Les deux effets ont le mëme signe. Le phénomène est stable,
x 2-x les caractéristiques se maintiennent dans le temps.With this device, we obtained an open-circuit voltage of 200 mV and a short-circuit current of the order of mA / cm2 for a temperature of 70 OC without apparent thermal gradient. The voltage and the current increase when the temperature increases. To this thermo-electronic effect can possibly be added a photovoltaic effect, in the case where the support is glass and if the light arrives at the level of the junction (Cd, Zn) S
CuGaSe Te. The two effects have the same sign. The phenomenon is stable,
x 2-x the characteristics are maintained over time.
Les performances de ce dispositif peuvent certainement entre encore améliorées, notamment par l'optimisation de la structure électrique (résistance shunt, résistance série, contact électrique) et du matériau. L'effet thermo-électronique observé peut s'expliquer peutfetre par le vidage thermique de pièges profonds à un interface, et le triage des charges par le champ électrique existant aux contacts semiconducteur(n)-semiconducteur(p) ou métal-semiconducteur. Les matériaux responsables sont mal connus car plusieurs composés peuvent se former quand on dépose CuGaSe Te2 (d'après
x le diagramme de phase). Il faut noter aussi que d'autres matériaux sont susceptibles de donner l'effet observé, notamment d'autres composés de la famille de CuGaSe Te , c'est-à-dire les composés I-III-VI2 . Il faut
x 2-x noter également que d'autres méthodes de dépit des couches minces-peuvent etre utilisées.The performance of this device can certainly be further improved, in particular by optimizing the electrical structure (shunt resistance, series resistance, electrical contact) and the material. The observed thermoelectronic effect can be explained by the thermal emptying of deep traps at an interface, and the sorting of the charges by the electric field existing at the semiconductor (n) -semiconductor (p) or metal-semiconductor contacts. The responsible materials are not well known because several compounds can be formed when CuGaSe Te2 is deposited (according to
x phase diagram). It should also be noted that other materials are capable of giving the observed effect, in particular other compounds of the CuGaSe Te family, that is to say compounds I-III-VI2. It is necessary
x 2-x Also note that other methods - despite the thin films - may be used.
Le dispositif présenté ici est intéressant par ses applications potentielles. 70 OC est la température de l'eau d'un chauffe-eau solaire par exemple, ou la température d'une tole noire exposée au soleil. D'ou un moyen intéressant de convertir l'énergie solaire en énergie électrique à bas prix de revient, d'autant plus qu'un effet photovoltaique peut éventuellement s'ajouter. L'énergie thermique perdue dans les moteurs peut aussi etre utilisée. Une technique de déport de couches minces en grande surface et à bas prix de revient devrait permettre de passer du stade du laboratoire au stade industriel. The device presented here is interesting for its potential applications. 70 OC is the water temperature of a solar water heater for example, or the temperature of a black plate exposed to the sun. Hence an interesting way of converting solar energy into electrical energy at low cost, especially since a photovoltaic effect can possibly be added. The thermal energy lost in the motors can also be used. A thin film offset technique in supermarkets and at low cost should make it possible to move from the laboratory stage to the industrial stage.
Le dispositif présenté ici peut aussi etre utilisé comme capteur thermique sensible, The device presented here can also be used as a sensitive thermal sensor,
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9110258A FR2680279A1 (en) | 1991-08-09 | 1991-08-09 | High-performance thermo-electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9110258A FR2680279A1 (en) | 1991-08-09 | 1991-08-09 | High-performance thermo-electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2680279A1 true FR2680279A1 (en) | 1993-02-12 |
Family
ID=9416156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9110258A Pending FR2680279A1 (en) | 1991-08-09 | 1991-08-09 | High-performance thermo-electronic device |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2680279A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957954A (en) * | 2016-05-13 | 2016-09-21 | 宁波工程学院 | Mn containing P-type Cu5Ga9Te16 medium-temperature thermoelectric material and preparation technology thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103384A (en) * | 1982-12-04 | 1984-06-14 | Hoya Corp | Transparent conductive film for solar battery |
| US4523051A (en) * | 1983-09-27 | 1985-06-11 | The Boeing Company | Thin films of mixed metal compounds |
| JPS60142575A (en) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | Photovoltaic element |
| US4642140A (en) * | 1985-04-30 | 1987-02-10 | The United States Of America As Represented By The United States Department Of Energy | Process for producing chalcogenide semiconductors |
| JPS6428968A (en) * | 1987-07-24 | 1989-01-31 | Fuji Electric Co Ltd | Solar cell |
| WO1990015445A1 (en) * | 1989-06-07 | 1990-12-13 | International Solar Electric Technology, Inc. | Improved group i-iii-vi2 semiconductor films for solar cell application |
-
1991
- 1991-08-09 FR FR9110258A patent/FR2680279A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59103384A (en) * | 1982-12-04 | 1984-06-14 | Hoya Corp | Transparent conductive film for solar battery |
| US4523051A (en) * | 1983-09-27 | 1985-06-11 | The Boeing Company | Thin films of mixed metal compounds |
| JPS60142575A (en) * | 1983-12-28 | 1985-07-27 | Matsushita Electric Ind Co Ltd | Photovoltaic element |
| US4642140A (en) * | 1985-04-30 | 1987-02-10 | The United States Of America As Represented By The United States Department Of Energy | Process for producing chalcogenide semiconductors |
| JPS6428968A (en) * | 1987-07-24 | 1989-01-31 | Fuji Electric Co Ltd | Solar cell |
| WO1990015445A1 (en) * | 1989-06-07 | 1990-12-13 | International Solar Electric Technology, Inc. | Improved group i-iii-vi2 semiconductor films for solar cell application |
Non-Patent Citations (6)
| Title |
|---|
| 19TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 1987 4 Mai 1987, NEW ORLEANS, LOUISANA pages 1445 - 1447; W. CHEN ET AL.: 'DEVELOPMENT OF THIN FILM POLYCRYSTALLINE CUIN1-XGAXSE2 SOLAR CELLS' * |
| PATENT ABSTRACTS OF JAPAN vol. 008, no. 221 (E-271)9 Octobre 1984 & JP-A-59 103 384 ( HOYA GLASS KK ) 14 Juin 1984 * |
| PATENT ABSTRACTS OF JAPAN vol. 009, no. 305 (E-363)3 Décembre 1985 & JP-A-60 142 575 ( MATSUSHITA DENKI SANGYO KK ) 27 Juillet 1985 * |
| PATENT ABSTRACTS OF JAPAN vol. 013, no. 216 (E-760)19 Mai 1989 & JP-A-1 028 968 ( FUJI ELECTRIC CO LTD ) 31 Janvier 1989 * |
| SEVENTH E.C. PHOTOVOLTAIC SOLAR ENERGY CONFERENCE 27 Octobre 1986, SEVILLA,SPAIN pages 459 - 464; L. STOLT ET AL.: 'CUINSE2 AN CUGASE2 THIN FILM SOLAR CELLS FOR TANDEM STRUCTURES' * |
| SOLAR CELLS. vol. 14, no. 2, Mai 1985, LAUSANNE CH pages 123 - 131; P. RAM ET AL.: 'TOTALLY SPRAYED CUINSE2/CD(ZN)S AND CUINS2/CD(ZN)S SOLAR CELLS' * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105957954A (en) * | 2016-05-13 | 2016-09-21 | 宁波工程学院 | Mn containing P-type Cu5Ga9Te16 medium-temperature thermoelectric material and preparation technology thereof |
| CN105957954B (en) * | 2016-05-13 | 2018-05-15 | 宁波工程学院 | P-type Cu containing Mn5Ga9Te16Warm thermoelectric material and its preparation process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tani et al. | Phototransport effects in polyacetylene,(CH) x | |
| Nang et al. | Photovoltaic Effect observed on the construction of metal-amorphous InxSe1-x thin film–SnO2 system | |
| Ozaki et al. | Junction formation with pure and doped polyacetylene | |
| Staebler et al. | Reversible conductivity changes in discharge‐produced amorphous Si | |
| Rappaport | The photovoltaic effect and its utilization | |
| Ortega et al. | Optoelectronic properties of CdO/Si photodetectors | |
| US4127738A (en) | Photovoltaic device containing an organic layer | |
| US3530007A (en) | Solar cell including aceanthraquinoxaline photosensitive material | |
| Nagatomo et al. | Fabrication and characterization of SnO2/n-Si solar cells | |
| US20030010973A1 (en) | Polymer semiconductor device comprising at least a rectifying function and mehtod for making same | |
| FR2773215A1 (en) | BOLOMETRIC THERMAL DETECTOR | |
| Singh et al. | Design issues in the fabrication of CdS–CdTe solar cells on molybdenum foil substrates | |
| Gregg | Photovoltaic properties of a molecular semiconductor modulated by an exciton‐dissociating film | |
| Schroder | Transparent gate silicon photodetectors | |
| Matsushita et al. | Photovoltaic Effect of Amorphous InxSe1-x Film–SnO2 Structure | |
| US3952323A (en) | Semiconductor photoelectric device | |
| Raissi et al. | Highly sensitive ptsi/porous si schottky detectors | |
| FR2680279A1 (en) | High-performance thermo-electronic device | |
| JPH0434833B2 (en) | ||
| JPS6143870B2 (en) | ||
| Kimmitt | Recent development of infrared detectors | |
| Williams | Gold in solar cells: A review of current work | |
| JP7344086B2 (en) | Photoelectric conversion element, its manufacturing method, and stacked image sensor | |
| Yamaguchi | Defect at the surface of a-Si: H films as elucidated by photocurrent | |
| US4227943A (en) | Schottky barrier solar cell |