FR2671430A1 - Procede de gravure d'un film, notamment en oxyde supraconducteur, et film en resultant. - Google Patents

Procede de gravure d'un film, notamment en oxyde supraconducteur, et film en resultant. Download PDF

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Publication number
FR2671430A1
FR2671430A1 FR9100069A FR9100069A FR2671430A1 FR 2671430 A1 FR2671430 A1 FR 2671430A1 FR 9100069 A FR9100069 A FR 9100069A FR 9100069 A FR9100069 A FR 9100069A FR 2671430 A1 FR2671430 A1 FR 2671430A1
Authority
FR
France
Prior art keywords
film
etching
substrate
laser
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9100069A
Other languages
English (en)
French (fr)
Other versions
FR2671430B1 (enrdf_load_stackoverflow
Inventor
Chambonnet Didier
Belouet Christian
Sinobad Dusan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel Alsthom Compagnie Generale dElectricite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Alsthom Compagnie Generale dElectricite filed Critical Alcatel Alsthom Compagnie Generale dElectricite
Priority to FR9100069A priority Critical patent/FR2671430A1/fr
Publication of FR2671430A1 publication Critical patent/FR2671430A1/fr
Application granted granted Critical
Publication of FR2671430B1 publication Critical patent/FR2671430B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0688—Etching

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
FR9100069A 1991-01-04 1991-01-04 Procede de gravure d'un film, notamment en oxyde supraconducteur, et film en resultant. Granted FR2671430A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9100069A FR2671430A1 (fr) 1991-01-04 1991-01-04 Procede de gravure d'un film, notamment en oxyde supraconducteur, et film en resultant.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9100069A FR2671430A1 (fr) 1991-01-04 1991-01-04 Procede de gravure d'un film, notamment en oxyde supraconducteur, et film en resultant.

Publications (2)

Publication Number Publication Date
FR2671430A1 true FR2671430A1 (fr) 1992-07-10
FR2671430B1 FR2671430B1 (enrdf_load_stackoverflow) 1993-02-26

Family

ID=9408456

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9100069A Granted FR2671430A1 (fr) 1991-01-04 1991-01-04 Procede de gravure d'un film, notamment en oxyde supraconducteur, et film en resultant.

Country Status (1)

Country Link
FR (1) FR2671430A1 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996041370A1 (en) * 1995-06-07 1996-12-19 Cauldron Limited Partnership Removal of material by polarized radiation and back side application of radiation
US6048588A (en) * 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
US6136210A (en) * 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF QUANTUM ELECTRONICS. vol. 25, no. 11, Novembre 1989, NEW YORK US pages 2399 - 2404; N. SAVVA ET AL.: 'Excimer laser patterning of high-Tc superconducting thin films of YBCO ' *
JOURNAL OF APPLIED PHYSICS vol. 66, no. 1, 1 Juillet 1989, NEW YORK, US pages 457 - 459; E. FOGARASSI ET AL.: 'Laser-induced forward transfer of high-Tc YBaCuO and BiSrCaCuO superconducting thin films ' *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6048588A (en) * 1988-07-08 2000-04-11 Cauldron Limited Partnership Method for enhancing chemisorption of material
WO1996041370A1 (en) * 1995-06-07 1996-12-19 Cauldron Limited Partnership Removal of material by polarized radiation and back side application of radiation
US5958268A (en) * 1995-06-07 1999-09-28 Cauldron Limited Partnership Removal of material by polarized radiation
US6136210A (en) * 1998-11-02 2000-10-24 Xerox Corporation Photoetching of acoustic lenses for acoustic ink printing

Also Published As

Publication number Publication date
FR2671430B1 (enrdf_load_stackoverflow) 1993-02-26

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