FR2651372B1 - DUAL METALLIZATION POWER SEMICONDUCTOR COMPONENT AND METHOD FOR METALLIZING THE SAME. - Google Patents
DUAL METALLIZATION POWER SEMICONDUCTOR COMPONENT AND METHOD FOR METALLIZING THE SAME.Info
- Publication number
- FR2651372B1 FR2651372B1 FR8911431A FR8911431A FR2651372B1 FR 2651372 B1 FR2651372 B1 FR 2651372B1 FR 8911431 A FR8911431 A FR 8911431A FR 8911431 A FR8911431 A FR 8911431A FR 2651372 B1 FR2651372 B1 FR 2651372B1
- Authority
- FR
- France
- Prior art keywords
- metallizing
- same
- power semiconductor
- semiconductor component
- metallization power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000009977 dual effect Effects 0.000 title 1
- 238000001465 metallisation Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8911431A FR2651372B1 (en) | 1989-08-31 | 1989-08-31 | DUAL METALLIZATION POWER SEMICONDUCTOR COMPONENT AND METHOD FOR METALLIZING THE SAME. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8911431A FR2651372B1 (en) | 1989-08-31 | 1989-08-31 | DUAL METALLIZATION POWER SEMICONDUCTOR COMPONENT AND METHOD FOR METALLIZING THE SAME. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2651372A1 FR2651372A1 (en) | 1991-03-01 |
FR2651372B1 true FR2651372B1 (en) | 1994-05-06 |
Family
ID=9385031
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8911431A Expired - Fee Related FR2651372B1 (en) | 1989-08-31 | 1989-08-31 | DUAL METALLIZATION POWER SEMICONDUCTOR COMPONENT AND METHOD FOR METALLIZING THE SAME. |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2651372B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5580825A (en) * | 1993-09-20 | 1996-12-03 | International Technology Exchange Corp. | Process for making multilevel interconnections of electronic components |
-
1989
- 1989-08-31 FR FR8911431A patent/FR2651372B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2651372A1 (en) | 1991-03-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |