FR2627629B1 - FIELD EFFECT TRANSISTOR USING DOPED METALLOPHTHALOCYANINS AS ACTIVE MATERIAL - Google Patents

FIELD EFFECT TRANSISTOR USING DOPED METALLOPHTHALOCYANINS AS ACTIVE MATERIAL

Info

Publication number
FR2627629B1
FR2627629B1 FR8802268A FR8802268A FR2627629B1 FR 2627629 B1 FR2627629 B1 FR 2627629B1 FR 8802268 A FR8802268 A FR 8802268A FR 8802268 A FR8802268 A FR 8802268A FR 2627629 B1 FR2627629 B1 FR 2627629B1
Authority
FR
France
Prior art keywords
metallophthalocyanins
doped
active material
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8802268A
Other languages
French (fr)
Other versions
FR2627629A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MADRU ROGER
Original Assignee
MADRU ROGER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MADRU ROGER filed Critical MADRU ROGER
Priority to FR8802268A priority Critical patent/FR2627629B1/en
Publication of FR2627629A1 publication Critical patent/FR2627629A1/en
Application granted granted Critical
Publication of FR2627629B1 publication Critical patent/FR2627629B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
FR8802268A 1988-02-19 1988-02-19 FIELD EFFECT TRANSISTOR USING DOPED METALLOPHTHALOCYANINS AS ACTIVE MATERIAL Expired - Fee Related FR2627629B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8802268A FR2627629B1 (en) 1988-02-19 1988-02-19 FIELD EFFECT TRANSISTOR USING DOPED METALLOPHTHALOCYANINS AS ACTIVE MATERIAL

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8802268A FR2627629B1 (en) 1988-02-19 1988-02-19 FIELD EFFECT TRANSISTOR USING DOPED METALLOPHTHALOCYANINS AS ACTIVE MATERIAL

Publications (2)

Publication Number Publication Date
FR2627629A1 FR2627629A1 (en) 1989-08-25
FR2627629B1 true FR2627629B1 (en) 1993-02-05

Family

ID=9363598

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8802268A Expired - Fee Related FR2627629B1 (en) 1988-02-19 1988-02-19 FIELD EFFECT TRANSISTOR USING DOPED METALLOPHTHALOCYANINS AS ACTIVE MATERIAL

Country Status (1)

Country Link
FR (1) FR2627629B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5969376A (en) * 1996-08-23 1999-10-19 Lucent Technologies Inc. Organic thin film transistor having a phthalocyanine semiconductor layer
FR2830327A1 (en) * 2001-10-01 2003-04-04 Grimm R & D Sarl Detector for determining chemical composition of gas or solution comprises use of limited number of sensitive materials or coatings, combined with electrical circuit
CN100364108C (en) * 2002-08-28 2008-01-23 中国科学院长春应用化学研究所 Sandwith FET containing organic semiconductor and its preparing process

Also Published As

Publication number Publication date
FR2627629A1 (en) 1989-08-25

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20051031