FR2622346A1 - Capacitor for electronic micro-circuit and arrangement incorporating such a capacitor - Google Patents
Capacitor for electronic micro-circuit and arrangement incorporating such a capacitor Download PDFInfo
- Publication number
- FR2622346A1 FR2622346A1 FR8714689A FR8714689A FR2622346A1 FR 2622346 A1 FR2622346 A1 FR 2622346A1 FR 8714689 A FR8714689 A FR 8714689A FR 8714689 A FR8714689 A FR 8714689A FR 2622346 A1 FR2622346 A1 FR 2622346A1
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- 239000003990 capacitor Substances 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910001252 Pd alloy Inorganic materials 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 241000158147 Sator Species 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/02—Mountings
- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32265—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48265—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19103—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device interposed between the semiconductor or solid-state device and the die mounting substrate, i.e. chip-on-passive
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
La présente invention a trait d'une façon générale aux condensateurs pour circuits électroniques à haute intégration, et concerne en particulier un nouveau montage d'un condensateur en association avec un microcircuit ou puce monté par exemple par soudage sur une carte de support telle qu'un circuit imprimé. The present invention relates generally to capacitors for highly integrated electronic circuits, and relates in particular to a new mounting of a capacitor in association with a microcircuit or chip mounted for example by welding on a support card such as a printed circuit.
Dans la technique antérieure, un condensateur, tel qu'un condensateur de découplage d'alimentation, par exemple de type céramique monolithique à bornes de connexion faciales, est rapporté sur la carte à proximité du micro-circuit. On a représenté sur la figure 1 un exemple d'un tel montage. In the prior art, a capacitor, such as a power decoupling capacitor, for example of the monolithic ceramic type with facial connection terminals, is attached to the card near the micro-circuit. There is shown in Figure 1 an example of such an arrangement.
La carte 10 comporte à sa surface supérieure deux zones ou pistes conductrices 12, 14 correspondant respectivement à la masse et à la tension d'alimentation du micro-circuit 40. Le micro-circuit 40 comprend à sa surface inférieure une couche conductrice 42 formant borne de masse en contact électrique avec la masse 12 et, à sa surface supérieure, une série de plots de connexion 44 parmi lesquels le plot extrême gauche 44a doit recevoir la tension d'alimentation. Le condensateur de découplage 20 est disposé sur la carte 10 à coté du micro-circuit. Sa borne latérale 26 est reliée, ici par soudage, à la piste 14, tandis que sa borne 24 située sur sa face latérale opposée est reliée à la masse 12. Enfin, un fil électrique 32 relie la borne positive 26 du condensateur (ou alternativement la piste 14) au plot 44a du micro-circuit 40. The card 10 has at its upper surface two zones or conductive tracks 12, 14 corresponding respectively to the mass and to the supply voltage of the micro-circuit 40. The micro-circuit 40 comprises on its lower surface a conductive layer 42 forming a terminal earth in electrical contact with earth 12 and, at its upper surface, a series of connection pads 44 among which the extreme left pad 44a must receive the supply voltage. The decoupling capacitor 20 is disposed on the card 10 next to the micro-circuit. Its lateral terminal 26 is connected, here by welding, to the track 14, while its terminal 24 located on its opposite lateral face is connected to the ground 12. Finally, an electric wire 32 connects the positive terminal 26 of the capacitor (or alternatively track 14) at stud 44a of micro-circuit 40.
Cependant, cette solution classique présente un certain nombre d'inconvénients : d'une part, le montage des composants côte-à-côte est encombrant et donc désavantageux du point de vue de la miniaturisation; d'autre part, il nécessite entre le condensateur et les bornes d'alimentation du micro-circuit des connexions de longueur relativement grande qui induisent des phénomènes d'inductance et de résistance en ligne. Ces phéncéénes prennent toute leur ortare dans le découplage des circuits électroniques numériques, dont la fréquence de travail (fréquence d'horloge) est de plus en plus élevée. However, this conventional solution has a certain number of drawbacks: on the one hand, the mounting of the components side by side is bulky and therefore disadvantageous from the point of view of miniaturization; on the other hand, it requires connections of relatively long length between the capacitor and the supply terminals of the micro-circuit which induce inductance and resistance phenomena in line. These phenomena take all their ortare in the decoupling of digital electronic circuits, whose working frequency (clock frequency) is higher and higher.
Ainsi, la présente invention vise principalement à proposer un nouveau condensateur destiné à être associé à un micro-circuit actif ou puce, qui permette de minimiser l'encombrement en surface de ces deux composants. Thus, the present invention aims mainly to propose a new capacitor intended to be associated with an active micro-circuit or chip, which makes it possible to minimize the space requirement on the surface of these two components.
Un autre objet principal de l'invention est de proposer un condensateur permettant une réduction au minimum de la longueur des liaisons entre le condensateur et les bornes d'alimentation du micro-circuit, pour ainsi notamment favoriser l'action de découplage.Another main object of the invention is to provide a capacitor allowing the length of the connections between the capacitor and the supply terminals of the micro-circuit to be reduced to a minimum, thus in particular promoting the decoupling action.
A cet effet, la présente invention concerne un condensateur destiné à être associé à un micro-circuit électronique ou analogue comportant une surface conductrice de base constituant l'une de ses bornes de raccordement, du type comprenant une structure sandwich de feuilles conductrices et de feuilles diélectriques alternées et deux bornes de connexion s'étendant à la périphérie de ladite structure sandwich, caractérisé en ce que chaque borne comprend une partie de connexion avec les feuilles conductrices#s'éten- dant transversalement auxdites feuilles dans deux régions de bords opposés de ladite structure et une partie inférieure de connexion avec des zones conductrices respectives formées sur un substrat, et en ce que l'une des deux bornes comprend une partie supérieure de connexion avec ladite surface conductrice de base du micro-circuit, de telle sorte que le condensateur peut être monté en sandwich entre le substrat et le micro-circuit en établissant entre eux au moins une connexion. To this end, the present invention relates to a capacitor intended to be associated with an electronic micro-circuit or the like comprising a basic conductive surface constituting one of its connection terminals, of the type comprising a sandwich structure of conductive sheets and sheets alternating dielectrics and two connection terminals extending at the periphery of said sandwich structure, characterized in that each terminal comprises a connection part with the conductive sheets # extending transversely to said sheets in two regions of opposite edges of said structure and a lower part for connection with respective conductive areas formed on a substrate, and in that one of the two terminals comprises an upper part for connection with said base conductive surface of the micro-circuit, so that the capacitor can be sandwiched between the substrate and the micro-circuit by establishing at least one connection between them .
Des aménagements préférés du condensateur selon l'invention sont les suivants
- ses dimensions en plan sont approximativement égales à celles du micro-circuit,
- ladite partie supérieure de l'une des bornes a des dimensions en plan approximativement égales à celles
du micro-circuit,
- son autre borne comporte également une par
tie supérieure située sur un prolongement latéral de fai
ble largeur du condensateur, et destiné à recevoir un fil
de connexion avec une autre borne de raccordement du micro
circuit, les parties supérieures des deux bornes du conden
sateur étant séparées par un espace de faible largeur,
- la partie de connexion avec les feuilles con
ductrices de ladite autre borne est disposée extérieurement
entre ses parties supérieure et inférieure,
- la partie de connexion avec les feuilles con
ductrices de ladite autre borne comprend au moins un puits
métallisé formé dans une partie de l'épaisseur de la structure à partir
de sa surface inférieure, à proximité d'un bord opposé à la partie de
connexion avec les feuilles conductrices de la première borne,
- il a des dimensions en plan précisément égales à celles du micro-circuit,
- il est de type céramique multicouche à structure monolithique,
- ses bornes sont réalisées en alliage argentpalladium.Preferred arrangements of the capacitor according to the invention are as follows:
- its dimensions in plan are approximately equal to those of the micro-circuit,
- Said upper part of one of the terminals has dimensions in plan approximately equal to those
micro-circuit,
- its other terminal also has one per
upper tie located on a lateral extension of fai
ble width of the capacitor, and intended to receive a wire
connection with another microphone connection terminal
circuit, the upper parts of the two terminals of the conden
sator being separated by a narrow space,
- the connection part with the con sheets
ductrices of said other terminal is arranged externally
between its upper and lower parts,
- the connection part with the con sheets
ductrices of said other terminal comprises at least one well
metallized formed in part of the thickness of the structure from
from its lower surface, near an edge opposite the part of
connection with the conductive sheets of the first terminal,
- it has plan dimensions precisely equal to those of the micro-circuit,
- it is of the multilayer ceramic type with a monolithic structure,
- its terminals are made of argentpalladium alloy.
L'invention concerne égalent un montage d'un microcircuit et d'un condensateur sur un substrat, caractérisé en ce qutil comprend un condensateur du type défini ci-dessus, en ce que le oenden- sateur est monté en sandwich entre le substrat et le micro-circuit, et en ce qu'un fil de connexion de faible longueur est prévu entre une région latérale du condensateur ou une zone conductrice voisine du substrat et une borne supérieure du micro-circuit. The invention also relates to the mounting of a microcircuit and a capacitor on a substrate, characterized in that it comprises a capacitor of the type defined above, in that the intensifier is sandwiched between the substrate and the micro-circuit, and in that a connecting wire of short length is provided between a lateral region of the capacitor or a conductive area adjacent to the substrate and an upper terminal of the micro-circuit.
Un autre avantage apporté par la présente invention ré side en ce que le condnnsateur,placé au-dessous du micro-circuit, tient lieu simultanément de radiateur de dissipation thermique, qui abaisse la teirature de travail dudit micro-circuit. Another advantage provided by the present invention lies in that the condenser, placed below the micro-circuit, acts simultaneously as a heat dissipation radiator, which lowers the working temperature of said micro-circuit.
D'autres aspects et avantages de là présente invention apparatront mieux à la lecture de la description détaillée suivante de formes de réalisations préférées de celle-ci, donnée à titre d'exemple et faite en référence aux dessins annexés, sur lesquels
- la figure 1 est une vue en coupe transversale schématique d'un montage conforme à la technique antérieure;
- la figure 2 est une vue en coupe transversale d'un montage selon une première forme de réalisation de l'invention;
- les figures 3a et 3b sont des vues en plan de dessus et de dessous du condensateur utilisé dans le montage de la figure 2;
- la figure 4 est une vue en coupe transversale d'un montage selon une seconde forme de réalisation de l'invention; et
- les figures Sa et 5b sont des vues en plan de dessus et de dessous du condensateur utilisé dans le montage de la figure 4.Other aspects and advantages of the present invention will appear better on reading the following detailed description of preferred embodiments thereof, given by way of example and made with reference to the accompanying drawings, in which
- Figure 1 is a schematic cross-sectional view of an assembly according to the prior art;
- Figure 2 is a cross-sectional view of an assembly according to a first embodiment of the invention;
- Figures 3a and 3b are top and bottom plan views of the capacitor used in the assembly of Figure 2;
- Figure 4 is a cross-sectional view of an assembly according to a second embodiment of the invention; and
- Figures Sa and 5b are top and bottom plan views of the capacitor used in the assembly of Figure 4.
On a représenté sur la figure 2 un montage conforme à une première forme de réalisation de la présente invention. There is shown in Figure 2 an assembly according to a first embodiment of the present invention.
Un substrat isolant ou carte, disposé horizontalement et désigné par la référence 100, présente à sa surface supérieure deux zones ou pistes conductrices 102, 104. An insulating substrate or card, arranged horizontally and designated by the reference 100, has at its upper surface two zones or conductive tracks 102, 104.
La piste 104 amène la tension d'alimentation d'un microcircuit intégré, comme on le verra plus loin, tandis que la piste 102 correspond à la masse.Track 104 brings the supply voltage of an integrated microcircuit, as will be seen below, while track 102 corresponds to ground.
Un micro-circuit ou puce 140 et un condensateur 120, utilisé ici pour le découplage de l'alimentation dudit micro-circuit, sont montés sur la carte. A micro-circuit or chip 140 and a capacitor 120, used here for decoupling the supply of said micro-circuit, are mounted on the card.
Le micro-circuit 140 comporte à sa surface inférieure une couche conductrice 142 destinée à être reliée à la masse et à sa surface supérieure une série de plots 144 destinés à la connexion du micro-circuit avec l'extérieur. The micro-circuit 140 comprises on its lower surface a conductive layer 142 intended to be connected to ground and on its upper surface a series of studs 144 intended for the connection of the micro-circuit with the outside.
Parmi ces plots, celui qui est situé à l'extrême droite sur la figure 2, indiqué en 144a, est destiné à recevoir la tension positive d'alimentation. Among these studs, the one located at the extreme right in Figure 2, indicated in 144a, is intended to receive the positive supply voltage.
Conformément à l'invention, le condensateur 120 est destiné à venir se loger entre le substrat 100 et le micro-circuit. Il comprend dans le présent exemple une structure monolithique constituée par des feuilles de céramique et de feuilles conductrices ou électrodes alternées, globalement désignée par la référence 122. Les feuilles sont ici disposées horizontalement. According to the invention, the capacitor 120 is intended to be housed between the substrate 100 and the micro-circuit. In the present example, it comprises a monolithic structure constituted by ceramic sheets and alternating conductive sheets or electrodes, generally designated by the reference 122. The sheets are here arranged horizontally.
Un premier groupe de feuilles conductrices s'étend jusqu'au bord de gauche de la structure 122, tandis que les feuilles de l'autre groupe viennent jusqu'au bord opposé de ladite structure, à droite sur la figure 2. A first group of conductive sheets extends to the left edge of the structure 122, while the sheets of the other group come to the opposite edge of said structure, on the right in FIG. 2.
De cette manière, deux bornes de connexion conductrices peuvent être appliquées sur les faces latérales gauche et droite pour être en contact avec les groupes respectifs de feuilles conductrices. In this way, two conductive connection terminals can be applied to the left and right side faces to be in contact with the respective groups of conductive sheets.
Conformément à l'invention, une première borne 124 du condensateur 120 comprend une partie latérale 124a en contact avec le groupe respectif de feuilles conductrices, une partie supérieure 124b s'étendant sur la majeure partie de la surface supérieure de la structure 122, et une partie inférieure 124c s'étendant sur environ la moitié de la surface inférieure de la structure 122. According to the invention, a first terminal 124 of the capacitor 120 comprises a lateral part 124a in contact with the respective group of conductive sheets, an upper part 124b extending over most of the upper surface of the structure 122, and a lower part 124c extending over approximately half of the lower surface of the structure 122.
La seconde borne du condensateur, globalement désignée par la référence 126, comprend une partie latérale 126a en contact électrique avec l'autre groupe de feuilles conductrices de la structure de condensateur, une partie supérieure 126b s'étendant en direction de la partie 124b de l'autre borne, dans une région de bordure laissée libre par cette dernière, ainsi qu'une partie inférieure 126c s'étendant sur environ la moitié de la surface inférieure de la structure 122 laissée libre par la partie 124c de l'autre borne
Comme on peut l'observert afin d'éviter que les deux bornes 124, 126 ne viennent au contact l'une de l'autre, il existe un premier espace 128 entre les parties supérieures 124b, 126b des deux électrodes et un second espace 130 entre leurs parties inférieures 124c, 126c.The second terminal of the capacitor, generally designated by the reference 126, comprises a lateral part 126a in electrical contact with the other group of conductive sheets of the capacitor structure, an upper part 126b extending in the direction of the part 124b of the other terminal, in a border region left free by the latter, as well as a lower part 126c extending over approximately half of the lower surface of the structure 122 left free by the part 124c of the other terminal
As can be observed in order to prevent the two terminals 124, 126 from coming into contact with one another, there is a first space 128 between the upper parts 124b, 126b of the two electrodes and a second space 130 between their lower parts 124c, 126c.
Comme on peut l'observer, le condensateur, dans le plan de la figure 2, présente une longueur légèrement supérieure à celle du micro-circuit, la longueur de la partie supérieure 124b de la borne 124 étant quant à elle sensiblement égale à la longueur du micro-circuit. As can be observed, the capacitor, in the plane of FIG. 2, has a length slightly greater than that of the micro-circuit, the length of the upper part 124b of the terminal 124 being for its part substantially equal to the length of the micro-circuit.
De préférence, le micro-circuit et le condensateur ont approximativement même dimension dans la direction transversale au plan de la figure 2. Preferably, the micro-circuit and the capacitor have approximately the same dimension in the direction transverse to the plane of FIG. 2.
Le montage du micro-circuit 140 et du condensateur 120, destiné au découplage de sa tension d'alimentation continue, s'effectue comme représenté sur la figure 2. La caractéristique essentielle de l'invention réside en ce que le condensateur 120 vient prendre place entre le substrat 100 et le micro-circuit 140, et par conséquent, ne vient pas encombrer la carte, ce qui est particulièrement propice du point de vue de la miniaturisation. The mounting of the micro-circuit 140 and of the capacitor 120, intended for decoupling its DC supply voltage, is carried out as shown in FIG. 2. The essential characteristic of the invention resides in that the capacitor 120 comes to take place between the substrate 100 and the micro-circuit 140, and therefore does not clutter the card, which is particularly favorable from the point of view of miniaturization.
Plus précisément, le condensateur 120 est tout d'abord fixé sur la carte 100 en une position telle que les zones conductrices 102 et 104 de cette dernière soient respectivement en contact électrique avec les parties inférieures 124c, 126c des deux bornes du condensateur, puis le micro-circuit 140 est fixé sur le dessus du condensateur 120 par sa couche conductrice 142, superposée à la partie supérieure 124b de la borne 124 et en contact électrique avec oelle-ci. Enfin, un fil de connexion 132 est soudé entre la partie supérieure 126b de la borne 126 et le plot d'alimentation 144a du micro-circuit. Le condensateur 120 est ainsi relié aux deux pôles de l'alimentation du micro-circuit 140, en parallèle avec ce dernier. More precisely, the capacitor 120 is firstly fixed on the card 100 in a position such that the conductive zones 102 and 104 of the latter are respectively in electrical contact with the lower parts 124c, 126c of the two terminals of the capacitor, then the micro-circuit 140 is fixed on top of the capacitor 120 by its conductive layer 142, superimposed on the upper part 124b of the terminal 124 and in electrical contact with it. Finally, a connection wire 132 is soldered between the upper part 126b of the terminal 126 and the supply pad 144a of the micro-circuit. The capacitor 120 is thus connected to the two poles of the supply of the micro-circuit 140, in parallel with the latter.
On peut noter qu'en variante, le fil 132 peut être monté entre la zone conductrice 104 du substrat 100 et le plot 144a du microcircuit. It may be noted that, as a variant, the wire 132 can be mounted between the conductive area 104 of the substrate 100 and the stud 144a of the microcircuit.
Un autre avantage de la présente invention, outre le fait que le condensateur ne vient pas accroitre l'encombrement du micro-circuit sur la carte, réside en ce que la longueur des liaisons électriques entre le condensateur 120 et le micro-circuit 140 est réduite au minimum. Les pertes en ligne par inductance et résistance sont ainsi minimisées, et le découplage au niveau de l'alimentation s'effectue de façon optimale. Ceci permet en particulier, dans le cas des micro-circuits numériques, d'utiliser des fréquences de travail (fréquences d'horloge) plus élevées. Another advantage of the present invention, in addition to the fact that the capacitor does not increase the size of the micro-circuit on the card, resides in that the length of the electrical connections between the capacitor 120 and the micro-circuit 140 is reduced at least. The line losses by inductance and resistance are thus minimized, and the decoupling at the level of the supply is carried out in an optimal way. This allows in particular, in the case of digital micro-circuits, to use higher working frequencies (clock frequencies).
Outre, les particularités de l'invention décrites jusqu'à présent, le condensateur 120 est réalisé de préférence par les technologies classiques des condensateurs céramiques multicouches monolithiques à bornes de connexion faciales : les feuilles destinées à former les plaques du condensateur sont rendues conductrices selon des motifs donnés par sérigraphie, puis on réalise un empilage de feuilles conductrices et de feuilles céramiques alternées. Suivent les étapes classiques de mise en pression de la structuremultisandwich obtenue, de cuisson et de métallisation. In addition to the features of the invention described so far, the capacitor 120 is preferably produced by conventional technologies of monolithic multilayer ceramic capacitors with face connection terminals: the sheets intended to form the plates of the capacitor are made conductive according to patterns given by screen printing, then a stack of conductive sheets and alternating ceramic sheets is produced. Follow the classic steps of pressurizing the obtained multi-sandwich structure, baking and metallization.
De préférence, les bornes 124, 126 du condensateur sont réalisées en alliage argent-palladium (80%20%); qui est avantageux en ce que la fixation du condensateur sur la carte 100 et sur le micro-circuit peut être réalisée au choix par soudage, par collage ou par la technique de thermr-carrpression,ou encore par toute autre technique appropriée. Preferably, the terminals 124, 126 of the capacitor are made of a silver-palladium alloy (80% 20%); which is advantageous in that the fixing of the capacitor on the card 100 and on the micro-circuit can be carried out as desired by welding, by gluing or by the thermr-carrpression technique, or by any other suitable technique.
En ce qui concerne le procédé de mise en place des bornes sur la structure monolithique 122, on peut par exemple utiliser la technique classique de trempage pour les parties de bords latéraux 124a, 126a électriquement reliées aux feuilles conductrices de la structure 122, tandis que les parties supérieure et inférieure de chaque borne sont avantageusement réalisées par sérigraphie. As regards the method of placing the terminals on the monolithic structure 122, it is possible, for example, to use the conventional dipping technique for the side edge portions 124a, 126a electrically connected to the conductive sheets of the structure 122, while the upper and lower parts of each terminal are advantageously produced by screen printing.
Un avantage auxiliaire du condensateur à montage "sandwich" de la présente invention réside en ce qu'il constitue, grâce à la bonne conductibilité thermique et à l'épaisseur substantielle de ses bornes 124, 126, un radiateur de dissipation thermique vis-à-vis du microcircuit actif 140. La température de travail de ce dernier est ainsi diminuée. An auxiliary advantage of the sandwich-mounted capacitor of the present invention lies in that, thanks to the good thermal conductivity and the substantial thickness of its terminals 124, 126, a heat dissipation radiator with respect to screw of the active microcircuit 140. The working temperature of the latter is thus reduced.
En pratique, on peut réaliser conformément à l'invention des condensateurs céramiques d'une épaisseur de l'ordre de quelques dixièmes de millimètres, aptes à se loger par exemple sous des micro-circuits ayant des dimensions horizontales de l'ordre de 2 à 20 mm. In practice, ceramic capacitors can be produced in accordance with the invention with a thickness of the order of a few tenths of a millimeter, capable of being housed for example under micro-circuits having horizontal dimensions of the order of 2 to 20 mm.
On peut par exemple, en faisant varier l'épais- seur du condensateur, obtenir des capacités de 10 nF à 100 nF sous une tension nominale de 40v. One can for example, by varying the thickness of the capacitor, obtain capacitances from 10 nF to 100 nF at a nominal voltage of 40v.
Comme on l'a indiqué plus haut, il est nécessaire, dans la première réalisation de l'invention, de prolonger le condensateur latéralement, par exemple sur une distance de l'ordre de 0,5 mm, au-delà du bord correspondant du micro-circuit, et ceci afin de maintenir l'isolation électrique requise entre la borne 126 et la couche de masse 142 et de fournir un accès par le dessus à ladite borne 126 pour le raccordement par fil soudé avec le plot 144a du micro-circuit. As indicated above, it is necessary, in the first embodiment of the invention, to extend the capacitor laterally, for example over a distance of the order of 0.5 mm, beyond the corresponding edge of the micro-circuit, and this in order to maintain the required electrical insulation between terminal 126 and ground layer 142 and to provide access from above to said terminal 126 for connection by wire welded to the stud 144a of the micro-circuit .
De préférence, l'espace 128 entre les parties supérieures 124b, 126b des bornes du condensateur à une largeur de l'ordre de 100 à 200 gm. Une telle dimension peut être aisément obtenue par la technique de sérigraphie sus-mentionnée. Preferably, the space 128 between the upper parts 124b, 126b of the terminals of the capacitor has a width of the order of 100 to 200 gm. Such a dimension can be easily obtained by the above-mentioned screen printing technique.
En référence maintenant aux figures 4, 5a et 5b, on va décrire une seconde forme de réalisation de l'in- vention dans laquelle le condensateur peut avoir des dimensions en plan rigoureusement égales à celles du micro-circuit auquel il est associé, ce qui est encore plus avantageux du point de vue de l'encombrement. Referring now to Figures 4, 5a and 5b, we will describe a second embodiment of the invention in which the capacitor can have dimensions in plan strictly equal to those of the micro-circuit with which it is associated, which is even more advantageous from the point of view of space.
Sur ces figures, des éléments ou parties identiques ou similaires à ceux des figures 2, 3a et 3b sont désignés par les mêmes numéros de référence. In these figures, elements or parts identical or similar to those of Figures 2, 3a and 3b are designated by the same reference numbers.
Comme on peut l'observer sur la figure 4, du fait que le condensateur ne déborde pas vers la droite du micro-circuit 140, et compte tenu du fait que la partie de contact 124b de la borne 124 et sa partie homologue -142 du micro-circuit occupent l'intégralité de la surface supérieure du condensateur, il est impossible d'assurer le contact avec les feuilles conductrices du deuxième groupe de la structure de condensateur multicouche 122 en disposant une borne faciale latérale 126a comme dans le cas de la première forme de réalisation. As can be seen in Figure 4, the fact that the capacitor does not overflow to the right of the micro-circuit 140, and taking into account that the contact part 124b of the terminal 124 and its homologous part -142 of the micro-circuit occupy the entire upper surface of the capacitor, it is impossible to ensure contact with the conductive sheets of the second group of the multilayer capacitor structure 122 by having a lateral face terminal 126a as in the case of the first embodiment.
Ainsi, conformément à cette variante, la seconde borne 126 du condensateur comprend seulement une partie inférieure 126s, destinée à venir au contact de la zone 104 du substrat 100, et un puits ou trou borgne 134 est ménagé à partir de la face inférieure de la structure de condensateur 122 essentiellement sur une grande partie de la hauteur de cette dernière, comme illustré, sans toutefois atteindre la partie conductrice supérieure 124b de la borne 124. Ce trou 134 est métallisé sur toute sa surface (en 126d) de telle sorte qu'un contact électrique est établi entre la borne t26 et le groupe de feuilles conductrices associé. Thus, in accordance with this variant, the second terminal 126 of the capacitor comprises only a lower part 126s, intended to come into contact with the zone 104 of the substrate 100, and a well or blind hole 134 is formed from the lower face of the capacitor structure 122 essentially over a large part of the height of the latter, as illustrated, without however reaching the upper conductive part 124b of the terminal 124. This hole 134 is metallized over its entire surface (at 126d) so that an electrical contact is established between terminal t26 and the associated group of conductive sheets.
D'une façon générale, la hauteur du trou borgne 134 sera choisie de manière à ce que sa métallisation intérieure établisse un contact avec toutes les feuilles conductrices du groupe considéré de la structure 122. In general, the height of the blind hole 134 will be chosen so that its interior metallization establishes contact with all the conductive sheets of the group considered in the structure 122.
Bien entendu, le motif conducteur des feuilles de l'autre groupe est déterminé de manière à ce qu'aucun contact électrique ne soit établi entre ces feuilles et la borne 126. On a représenté sur la figure 5b, en traits pointillés, un contour possible de ces feuilles conductrices. Elles#présentent chacune une encoche 138 s'étendant à partir du bord de la structure 122 opposé à la borne 124a et jusqu'à la région du puits 134. Of course, the conductive pattern of the sheets of the other group is determined so that no electrical contact is established between these sheets and the terminal 126. A possible contour has been shown in FIG. 5b, in dotted lines. of these conductive sheets. They each have a notch 138 extending from the edge of the structure 122 opposite the terminal 124a and up to the region of the well 134.
Les feuilles conductrices de l'autre groupe, devant être en contact avec la borne 126, s'étendent quant à elles sur la majeure partie de la section de la structure multi-couches 22, à l'exception bien entendu de la zone de bordure adjacente à la borne 124a. The conductive sheets of the other group, which must be in contact with the terminal 126, extend over the major part of the section of the multi-layer structure 22, with the exception of course of the border area adjacent to terminal 124a.
Le puits 134 peut avoir un diamètre de l'ordre de 0,5 mm et être distant par exemple de 1 à 3 mm du bord de la structure monolithique 122, cette distance étant suffisante pour ne pas fragiliser cette région de bord. The well 134 may have a diameter of the order of 0.5 mm and be distant for example from 1 to 3 mm from the edge of the monolithic structure 122, this distance being sufficient not to weaken this edge region.
Le puits 134 peut être ménagé dans la structure multicouche 122 par exemple par fraisage mécanique après la mise en compression de la structure et avant sa cuisson, ou encore par fraisaae mécanique ou par rayons laser après sa cuisson. The well 134 can be formed in the multilayer structure 122 for example by mechanical milling after the compression of the structure and before its baking, or also by mechanical milling or by laser beams after its baking.
Préférentiellement, le condensateur 122 conforme à cette seconde forme de réalisation de l'invention est réalisé comme décrit plus haut, c'est-à-dire par les techniques classiques dans le domaine des condensateurs céramiques multicouches. Preferably, the capacitor 122 according to this second embodiment of the invention is produced as described above, that is to say by conventional techniques in the field of multilayer ceramic capacitors.
Bien entendu, la présente invention n'est pas limitée aux modes de réalisation décrits ci-dessus et représentés sur les dessins, mais l'homme de l'art saura concevoir toute variante ou modification conforme à son esprit. Of course, the present invention is not limited to the embodiments described above and shown in the drawings, but those skilled in the art will know how to design any variant or modification in accordance with their spirit.
En particulier, les indications de formes et de dimensions indiqués dans la description ne doivent pas être considérées comme limitatives. A cet égard, les dimensions verticales de certaines parties du condensateur 120 et du micro-circuit 140 ont été volontairement exagérées sur les dessins par souci de clarté. In particular, the indications of shapes and dimensions indicated in the description should not be considered as limiting. In this regard, the vertical dimensions of certain parts of the capacitor 120 and the micro-circuit 140 have been deliberately exaggerated in the drawings for the sake of clarity.
En outre, on pourra prévoir, pour améliorer la connexion électrique avec les feuilles conductrices, une pluralité de trous borgnes 134 au lieu d'un seul, disposés en des emplacements quelconques. In addition, provision may be made to improve the electrical connection with the conductive sheets, a plurality of blind holes 134 instead of just one, arranged in any locations.
Par ailleurs, les termes "supérieur", "inférieur", "latéral", etc. utilisés tout au long de la description et dans les revendications sont à considérer dans un sens relatif, étant entendu que la carte et les composants peuvent prendre une orientation quelconque, par exemple verticale. In addition, the terms "upper", "lower", "lateral", etc. used throughout the description and in the claims are to be considered in a relative sense, it being understood that the card and the components can take any orientation, for example vertical.
Enfin, bien que l'on ait décrit l'invention en relation avec un condensateur de découplage d'alimentation, il est bien entendu que cette application n'est nullement limitative et qu'un condensateur conforme à l'invention peut être utilisée pour toute autre application, notamment filtrage, dans laquelle il doit être associé à un micro-circuit, en liaison ou non avec son alimentation. Finally, although the invention has been described in relation to a supply decoupling capacitor, it is understood that this application is in no way limiting and that a capacitor according to the invention can be used for any another application, in particular filtering, in which it must be associated with a micro-circuit, whether or not in connection with its power supply.
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8714689A FR2622346B1 (en) | 1987-10-23 | 1987-10-23 | CAPACITOR FOR ELECTRONIC MICRO-CIRCUIT AND MOUNTING INCORPORATING SUCH A CAPACITOR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8714689A FR2622346B1 (en) | 1987-10-23 | 1987-10-23 | CAPACITOR FOR ELECTRONIC MICRO-CIRCUIT AND MOUNTING INCORPORATING SUCH A CAPACITOR |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2622346A1 true FR2622346A1 (en) | 1989-04-28 |
| FR2622346B1 FR2622346B1 (en) | 1993-05-28 |
Family
ID=9356112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8714689A Expired - Fee Related FR2622346B1 (en) | 1987-10-23 | 1987-10-23 | CAPACITOR FOR ELECTRONIC MICRO-CIRCUIT AND MOUNTING INCORPORATING SUCH A CAPACITOR |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2622346B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002050852A2 (en) * | 2000-12-19 | 2002-06-27 | Intel Corporation | Capacitor with extended surface lands and method of fabrication therefor |
| EP1688995A1 (en) * | 2005-02-04 | 2006-08-09 | Alcatel Alsthom Compagnie Generale D'electricite | Interposer for decoupling integrated circuits on a circuit board |
| US7206918B2 (en) | 2000-12-19 | 2007-04-17 | Intel Corporation | Address predicting apparatus and methods |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3880493A (en) * | 1973-12-28 | 1975-04-29 | Burroughs Corp | Capacitor socket for a dual-in-line package |
| FR2456388A1 (en) * | 1979-05-10 | 1980-12-05 | Thomson Brandt | ELECTRONIC CIRCUIT MICROBOX, AND HYBRID CIRCUIT HAVING SUCH A MICROBOX |
| FR2495837A1 (en) * | 1980-12-09 | 1982-06-11 | Thomson Csf | Miniature packing for hybrid integrated circuit - provides capacitative coupling for certain connections using deposited electrode plates |
| EP0100175A2 (en) * | 1982-07-28 | 1984-02-08 | Corning Glass Works | Chip capacitor having a compliant termination |
| GB2176654A (en) * | 1985-06-11 | 1986-12-31 | Avx Corp | Printed circuit decoupling topography and method |
-
1987
- 1987-10-23 FR FR8714689A patent/FR2622346B1/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3880493A (en) * | 1973-12-28 | 1975-04-29 | Burroughs Corp | Capacitor socket for a dual-in-line package |
| FR2456388A1 (en) * | 1979-05-10 | 1980-12-05 | Thomson Brandt | ELECTRONIC CIRCUIT MICROBOX, AND HYBRID CIRCUIT HAVING SUCH A MICROBOX |
| FR2495837A1 (en) * | 1980-12-09 | 1982-06-11 | Thomson Csf | Miniature packing for hybrid integrated circuit - provides capacitative coupling for certain connections using deposited electrode plates |
| EP0100175A2 (en) * | 1982-07-28 | 1984-02-08 | Corning Glass Works | Chip capacitor having a compliant termination |
| GB2176654A (en) * | 1985-06-11 | 1986-12-31 | Avx Corp | Printed circuit decoupling topography and method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002050852A2 (en) * | 2000-12-19 | 2002-06-27 | Intel Corporation | Capacitor with extended surface lands and method of fabrication therefor |
| US6483692B2 (en) | 2000-12-19 | 2002-11-19 | Intel Corporation | Capacitor with extended surface lands and method of fabrication therefor |
| WO2002050852A3 (en) * | 2000-12-19 | 2003-04-03 | Intel Corp | Capacitor with extended surface lands and method of fabrication therefor |
| US7206918B2 (en) | 2000-12-19 | 2007-04-17 | Intel Corporation | Address predicting apparatus and methods |
| CN1327461C (en) * | 2000-12-19 | 2007-07-18 | 英特尔公司 | Capacitor with extended surface lands and method of fabrication therefor |
| EP1688995A1 (en) * | 2005-02-04 | 2006-08-09 | Alcatel Alsthom Compagnie Generale D'electricite | Interposer for decoupling integrated circuits on a circuit board |
| US7964802B2 (en) | 2005-02-04 | 2011-06-21 | Alcatel-Lucent | Interposer for decoupling integrated circuits on a circuit board |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2622346B1 (en) | 1993-05-28 |
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