FR2621758B1 - - Google Patents
Info
- Publication number
- FR2621758B1 FR2621758B1 FR8811500A FR8811500A FR2621758B1 FR 2621758 B1 FR2621758 B1 FR 2621758B1 FR 8811500 A FR8811500 A FR 8811500A FR 8811500 A FR8811500 A FR 8811500A FR 2621758 B1 FR2621758 B1 FR 2621758B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/105—Modifications for increasing the maximum permissible switched voltage in thyristor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/18—Modifications for indicating state of switch
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
- H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE3730140 | 1987-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2621758A1 FR2621758A1 (en) | 1989-04-14 |
FR2621758B1 true FR2621758B1 (en) | 1993-12-31 |
Family
ID=6335530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8811500A Granted FR2621758A1 (en) | 1987-09-05 | 1988-09-02 | Device for diagnosis or for the determination of the communication states of semiconductor-based protection apparatuses independently of the potential |
Country Status (2)
Country | Link |
---|---|
CH (1) | CH676527A5 (en) |
FR (1) | FR2621758A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19844823C1 (en) * | 1998-09-30 | 1999-10-28 | Siemens Ag | Thyristor circuit for high power static converter |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH602987A5 (en) * | 1976-04-23 | 1978-08-15 | Autophon Ag | Photocoupled switch monitor |
JPS5725160A (en) * | 1980-07-18 | 1982-02-09 | Fuji Electric Co Ltd | Antiparallel thyristor firing device by light auxiliary thyristor |
-
1988
- 1988-09-01 CH CH326888A patent/CH676527A5/en not_active IP Right Cessation
- 1988-09-02 FR FR8811500A patent/FR2621758A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
CH676527A5 (en) | 1991-01-31 |
FR2621758A1 (en) | 1989-04-14 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ER | Errata listed in the french official journal (bopi) |
Free format text: 15/89 |
|
ST | Notification of lapse |