FR2620736B1 - PROCESS FOR THE DEPOSITION OF TUNGSTEN OR MOLYBDENE SILICIDES - Google Patents

PROCESS FOR THE DEPOSITION OF TUNGSTEN OR MOLYBDENE SILICIDES

Info

Publication number
FR2620736B1
FR2620736B1 FR8713092A FR8713092A FR2620736B1 FR 2620736 B1 FR2620736 B1 FR 2620736B1 FR 8713092 A FR8713092 A FR 8713092A FR 8713092 A FR8713092 A FR 8713092A FR 2620736 B1 FR2620736 B1 FR 2620736B1
Authority
FR
France
Prior art keywords
molybdene
silicides
tungsten
deposition
molybdene silicides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8713092A
Other languages
French (fr)
Other versions
FR2620736A1 (en
Inventor
Yves Pauleau
Philippe Lami
Jacques Pelletier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Etat Francais
Original Assignee
Centre National de la Recherche Scientifique CNRS
Etat Francais
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Etat Francais filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR8713092A priority Critical patent/FR2620736B1/en
Publication of FR2620736A1 publication Critical patent/FR2620736A1/en
Application granted granted Critical
Publication of FR2620736B1 publication Critical patent/FR2620736B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
FR8713092A 1987-09-17 1987-09-17 PROCESS FOR THE DEPOSITION OF TUNGSTEN OR MOLYBDENE SILICIDES Expired - Lifetime FR2620736B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8713092A FR2620736B1 (en) 1987-09-17 1987-09-17 PROCESS FOR THE DEPOSITION OF TUNGSTEN OR MOLYBDENE SILICIDES

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8713092A FR2620736B1 (en) 1987-09-17 1987-09-17 PROCESS FOR THE DEPOSITION OF TUNGSTEN OR MOLYBDENE SILICIDES

Publications (2)

Publication Number Publication Date
FR2620736A1 FR2620736A1 (en) 1989-03-24
FR2620736B1 true FR2620736B1 (en) 1990-01-19

Family

ID=9355115

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8713092A Expired - Lifetime FR2620736B1 (en) 1987-09-17 1987-09-17 PROCESS FOR THE DEPOSITION OF TUNGSTEN OR MOLYBDENE SILICIDES

Country Status (1)

Country Link
FR (1) FR2620736B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0648859B1 (en) * 1993-10-14 1997-07-23 Applied Materials, Inc. Processes for the deposition of adherent tungsten silicide films

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4584207A (en) * 1984-09-24 1986-04-22 General Electric Company Method for nucleating and growing tungsten films

Also Published As

Publication number Publication date
FR2620736A1 (en) 1989-03-24

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Legal Events

Date Code Title Description
ST Notification of lapse