FR2606129B1 - IMPROVED QUARTZ TUBE FOR THE HEAT TREATMENT OF SEMICONDUCTOR WAFERS - Google Patents

IMPROVED QUARTZ TUBE FOR THE HEAT TREATMENT OF SEMICONDUCTOR WAFERS

Info

Publication number
FR2606129B1
FR2606129B1 FR8615431A FR8615431A FR2606129B1 FR 2606129 B1 FR2606129 B1 FR 2606129B1 FR 8615431 A FR8615431 A FR 8615431A FR 8615431 A FR8615431 A FR 8615431A FR 2606129 B1 FR2606129 B1 FR 2606129B1
Authority
FR
France
Prior art keywords
heat treatment
semiconductor wafers
quartz tube
improved quartz
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8615431A
Other languages
French (fr)
Other versions
FR2606129A1 (en
Inventor
Joel Boutault
Christian Deseez
Michel Mathieu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Compagnie IBM France SAS
Original Assignee
Compagnie IBM France SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie IBM France SAS filed Critical Compagnie IBM France SAS
Priority to FR8615431A priority Critical patent/FR2606129B1/en
Publication of FR2606129A1 publication Critical patent/FR2606129A1/en
Application granted granted Critical
Publication of FR2606129B1 publication Critical patent/FR2606129B1/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR8615431A 1986-10-30 1986-10-30 IMPROVED QUARTZ TUBE FOR THE HEAT TREATMENT OF SEMICONDUCTOR WAFERS Expired FR2606129B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8615431A FR2606129B1 (en) 1986-10-30 1986-10-30 IMPROVED QUARTZ TUBE FOR THE HEAT TREATMENT OF SEMICONDUCTOR WAFERS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8615431A FR2606129B1 (en) 1986-10-30 1986-10-30 IMPROVED QUARTZ TUBE FOR THE HEAT TREATMENT OF SEMICONDUCTOR WAFERS

Publications (2)

Publication Number Publication Date
FR2606129A1 FR2606129A1 (en) 1988-05-06
FR2606129B1 true FR2606129B1 (en) 1989-08-18

Family

ID=9340558

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8615431A Expired FR2606129B1 (en) 1986-10-30 1986-10-30 IMPROVED QUARTZ TUBE FOR THE HEAT TREATMENT OF SEMICONDUCTOR WAFERS

Country Status (1)

Country Link
FR (1) FR2606129B1 (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2409791A1 (en) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Doping semiconductor wafers - by diffusion in a furnace-heated tube closed at the ends using an atmosphere of pressurised argon
JPS5849290B2 (en) * 1980-08-18 1983-11-02 富士通株式会社 quartz reaction tube
DE8605735U1 (en) * 1986-03-03 1986-04-17 Heraeus Quarzschmelze Gmbh, 6450 Hanau Double wall quartz glass tube

Also Published As

Publication number Publication date
FR2606129A1 (en) 1988-05-06

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Legal Events

Date Code Title Description
ST Notification of lapse
ST Notification of lapse