FR2602361B1 - ACTIVE MATRIX DISPLAY SCREEN WITHOUT INTERFERENCE TRANSISTOR AND MANUFACTURING METHOD THEREOF - Google Patents
ACTIVE MATRIX DISPLAY SCREEN WITHOUT INTERFERENCE TRANSISTOR AND MANUFACTURING METHOD THEREOFInfo
- Publication number
- FR2602361B1 FR2602361B1 FR8610618A FR8610618A FR2602361B1 FR 2602361 B1 FR2602361 B1 FR 2602361B1 FR 8610618 A FR8610618 A FR 8610618A FR 8610618 A FR8610618 A FR 8610618A FR 2602361 B1 FR2602361 B1 FR 2602361B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- display screen
- active matrix
- matrix display
- interference transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8610618A FR2602361B1 (en) | 1986-01-27 | 1986-07-22 | ACTIVE MATRIX DISPLAY SCREEN WITHOUT INTERFERENCE TRANSISTOR AND MANUFACTURING METHOD THEREOF |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR868601083A FR2593631B1 (en) | 1986-01-27 | 1986-01-27 | GRID RESISTANT ACTIVE MATRIX DISPLAY SCREEN AND METHODS OF MAKING SAME |
FR8610618A FR2602361B1 (en) | 1986-01-27 | 1986-07-22 | ACTIVE MATRIX DISPLAY SCREEN WITHOUT INTERFERENCE TRANSISTOR AND MANUFACTURING METHOD THEREOF |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2602361A1 FR2602361A1 (en) | 1988-02-05 |
FR2602361B1 true FR2602361B1 (en) | 1989-05-19 |
Family
ID=26224986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8610618A Expired FR2602361B1 (en) | 1986-01-27 | 1986-07-22 | ACTIVE MATRIX DISPLAY SCREEN WITHOUT INTERFERENCE TRANSISTOR AND MANUFACTURING METHOD THEREOF |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2602361B1 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4965646A (en) * | 1988-10-21 | 1990-10-23 | General Electric Company | Thin film transistor and crossover structure for liquid crystal displays |
US5994174A (en) * | 1997-09-29 | 1999-11-30 | The Regents Of The University Of California | Method of fabrication of display pixels driven by silicon thin film transistors |
US6157048A (en) * | 1998-08-05 | 2000-12-05 | U.S. Philips Corporation | Thin film transistors with elongated coiled electrodes, and large area devices containing such transistors |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2533072B1 (en) * | 1982-09-14 | 1986-07-18 | Coissard Pierre | METHOD FOR MANUFACTURING ELECTRONIC CIRCUITS BASED ON THIN FILM TRANSISTORS AND CAPACITORS |
JPS60189969A (en) * | 1984-03-12 | 1985-09-27 | Matsushita Electric Ind Co Ltd | Thin film transistor |
-
1986
- 1986-07-22 FR FR8610618A patent/FR2602361B1/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2602361A1 (en) | 1988-02-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
TP | Transmission of property | ||
TP | Transmission of property | ||
ST | Notification of lapse |