FR2584237B1 - NORMALLY PASSING INTEGRATED MOS-BIPOLAR DEVICE - Google Patents

NORMALLY PASSING INTEGRATED MOS-BIPOLAR DEVICE

Info

Publication number
FR2584237B1
FR2584237B1 FR8509862A FR8509862A FR2584237B1 FR 2584237 B1 FR2584237 B1 FR 2584237B1 FR 8509862 A FR8509862 A FR 8509862A FR 8509862 A FR8509862 A FR 8509862A FR 2584237 B1 FR2584237 B1 FR 2584237B1
Authority
FR
France
Prior art keywords
bipolar device
integrated mos
normally passing
passing integrated
normally
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8509862A
Other languages
French (fr)
Other versions
FR2584237A1 (en
Inventor
Christophe Cros
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telemecanique SA
Original Assignee
La Telemecanique Electrique SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by La Telemecanique Electrique SA filed Critical La Telemecanique Electrique SA
Priority to FR8509862A priority Critical patent/FR2584237B1/en
Publication of FR2584237A1 publication Critical patent/FR2584237A1/en
Application granted granted Critical
Publication of FR2584237B1 publication Critical patent/FR2584237B1/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR8509862A 1985-06-28 1985-06-28 NORMALLY PASSING INTEGRATED MOS-BIPOLAR DEVICE Expired FR2584237B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8509862A FR2584237B1 (en) 1985-06-28 1985-06-28 NORMALLY PASSING INTEGRATED MOS-BIPOLAR DEVICE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8509862A FR2584237B1 (en) 1985-06-28 1985-06-28 NORMALLY PASSING INTEGRATED MOS-BIPOLAR DEVICE

Publications (2)

Publication Number Publication Date
FR2584237A1 FR2584237A1 (en) 1987-01-02
FR2584237B1 true FR2584237B1 (en) 1987-08-07

Family

ID=9320754

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8509862A Expired FR2584237B1 (en) 1985-06-28 1985-06-28 NORMALLY PASSING INTEGRATED MOS-BIPOLAR DEVICE

Country Status (1)

Country Link
FR (1) FR2584237B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5128742A (en) * 1988-04-14 1992-07-07 Powerex, Inc. Variable gain switch
US5757037A (en) * 1995-02-01 1998-05-26 Silicon Power Corporation Power thyristor with MOS gated turn-off and MOS-assised turn-on

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018468A1 (en) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH CONTROLLABLE EMITTER SHORT CIRCUITS AND METHOD FOR ITS OPERATION
DE3138763A1 (en) * 1981-09-29 1983-06-30 Siemens AG, 1000 Berlin und 8000 München LIGHT-IGNITABLE THYRISTOR WITH CONTROLLABLE EMITTER SHORT-CIRCUITS AND IGNITION GAIN
DE3379302D1 (en) * 1982-12-13 1989-04-06 Gen Electric Lateral insulated-gate rectifier structures
SE435436B (en) * 1983-02-16 1984-09-24 Asea Ab DOUBLE FLOOD PROTECTION

Also Published As

Publication number Publication date
FR2584237A1 (en) 1987-01-02

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Legal Events

Date Code Title Description
ST Notification of lapse