FR2576453A1 - Photoelectric solar cell for photovoltaic generator - Google Patents

Photoelectric solar cell for photovoltaic generator Download PDF

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Publication number
FR2576453A1
FR2576453A1 FR8600436A FR8600436A FR2576453A1 FR 2576453 A1 FR2576453 A1 FR 2576453A1 FR 8600436 A FR8600436 A FR 8600436A FR 8600436 A FR8600436 A FR 8600436A FR 2576453 A1 FR2576453 A1 FR 2576453A1
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France
Prior art keywords
solar cell
solar
carrier substrate
reflecting means
semiconductor body
Prior art date
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Granted
Application number
FR8600436A
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French (fr)
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FR2576453B1 (en
Inventor
Helmut Bebermeier
Jurgen Koch
Joachim Rath
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Licentia Patent Verwaltungs GmbH
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Licentia Patent Verwaltungs GmbH
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Publication of FR2576453A1 publication Critical patent/FR2576453A1/en
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Publication of FR2576453B1 publication Critical patent/FR2576453B1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The solar cell (2) is based upon a carrier substrate (1) and has a solid state element (3) that responds to emissions on both surfaces. The surfaces have an electrically conducting track system (4,5) and one has an electrical connector (6). On the top surface of the solar cell is a transparent glass cover (7) which is adhesively bonded (8). Between the solid state element and the carrier substrate is a reflective layer (9) in the form of a foil, e.g. aluminium. The elements are bonded together (10). Incident infra-red emission (IR) is reflected by the foil and avoids an increase in temp. of the substrate.

Description

La présente invention est.relative à une cellule solaire, utilisable dans des générateurs solaires photovoltaïques et constituée par un corps. semi-conducteur en forme de disque placé sur un substrat porteur conçu pour une irradiation bilatérale et dont les faces opposées, qui constituent le côté inférieur et le côté supérieur de la cellule solaire portent chacune un système de pistes conductrices structuré qui laisse à découvert des zones essentielles de la surface. The present invention is related to a solar cell, usable in photovoltaic solar generators and constituted by a body. disc-shaped semiconductor placed on a carrier substrate designed for bilateral irradiation, the opposite faces of which, which constitute the lower side and the upper side of the solar cell, each carry a structured conductive track system which leaves exposed areas essentials of the surface.

On connaît une cellule solaire qui est constituée par un corps semi-conducteur en forme de disque conçu pour une irradiation bilatérale et qui contient une transition pn(DE-OS 33 OS 269). Le corps de base semi-conducteur du premier type de conduction présente un dopage uniforme.Du côté de l'une de ses surfaces, le corps semi-conducteur comporte une zone du deuxième type de conduction, mince et plus dopée que le corps de base. Les deux zones de la cellule solaire sont en contact, sur les faces opposées du corps semi-conducteur, avec un système de pistes conductrices qui laisse à découvert des zones structurées-essentielles de la surface du semi-conducteur.Il est préférable que la face du corps semi-conducteur dans laquelle la zone du deuxième type de conduction est réalisée, soit utilisée pour la radiation incidente de lumière arrivant dans la direction d'incidence principale correspondant à la plus grande intensité tandis que la face arrière opposée du corps semi-conducteur, moins sensible, est celle par laquelle arrive la lumière dans la direction d'incidence correspondant à la plus faible.intensité. A solar cell is known which is constituted by a semiconductor body in the form of a disc designed for bilateral irradiation and which contains a pn transition (DE-OS 33 OS 269). The semiconductor base body of the first type of conduction has uniform doping. On one of its surfaces, the semiconductor body has a zone of the second type of conduction, which is thin and more doped than the base body. . The two areas of the solar cell are in contact, on the opposite faces of the semiconductor body, with a system of conductive tracks which leaves exposed essential-structured areas of the surface of the semiconductor. It is preferable that the face of the semiconductor body in which the zone of the second type of conduction is produced, or used for the incident radiation of light arriving in the main direction of incidence corresponding to the greatest intensity while the opposite rear face of the semiconductor body , less sensitive, is that by which the light arrives in the direction of incidence corresponding to the lowest intensity.

Lorsqu'on place une cellule solaire de ce type sur un substrat porteur non transparent, l'inconvénient est que le rayonnement
IR qui n'est pas absorbé par la cellule solaire est absorbé par le substrat. De ce fait, la cellule solaire s'échauffe et son rendement diminue. Le but de l'invention est donc la réalisation d'une cellule sloaire du type initialement défini dans laquelle le système cellule solaire/substrat porteur soit réalisé dans des condit ons optimales du point de vue optique et thermique et dans laquelle, par conséquent, le rendement électrique de la cellule solaire est amélioré. When a solar cell of this type is placed on a non-transparent carrier substrate, the disadvantage is that the radiation
IR that is not absorbed by the solar cell is absorbed by the substrate. As a result, the solar cell heats up and its efficiency decreases. The object of the invention is therefore to produce a sloar cell of the type initially defined in which the solar cell / carrier substrate system is produced under optitic and thermal conditions and in which, consequently, the electrical efficiency of the solar cell is improved.

Ce-but est atteint, suivant l'invention, du fait qu'entre le côté supérieur du substrat porteur et le côté inférieur du corps semi-conducteur on intercale un milieu réfléchissant qui réfléchit le rayonnement IR qui pénètre par la face supérieure de la cellule solaire et traverse le corps semi-conducteur. This object is achieved, according to the invention, because between the upper side of the carrier substrate and the lower side of the semiconductor body is interposed a reflective medium which reflects the IR radiation which penetrates through the upper face of the cell solar and passes through the semiconductor body.

L'un des avantages de l'invention consiste en ce qu'on peut réaliser une réfléxion IR maximale, ce qui donné une température de fonctionnement minimale pour la cellule solaire conçue par une irradiation bilatérale. Un autre avantage réside également dans la possibilité de placer la cellule solaire sur n'importe quel substrat por-teur, transparent ou non. One of the advantages of the invention consists in that a maximum IR reflection can be achieved, which gives a minimum operating temperature for the solar cell designed by bilateral irradiation. Another advantage also lies in the possibility of placing the solar cell on any carrier substrate, transparent or not.

Diverses autres caractéristiques de l'invention ressortent d'ailleurs de la description détaillée qui suit. Various other characteristics of the invention will also emerge from the detailed description which follows.

Une forme de réalisation de l'objet de l'invention est représentée, à titre d'exemples non limitatifs, au dessin annexé. An embodiment of the object of the invention is shown, by way of nonlimiting examples, in the accompanying drawing.

La figure unique est un exemple de réalisation de l'invention. The single figure is an exemplary embodiment of the invention.

La figure est une vue de côté représentant schématiquement, sans respecter d'échelle, une cellule solaire 2 placée sur un mSx*rat porteur 1. Cette cellule solaire est consti- tuée par un corps semi-conducteur 3 conçu pour une irradiation bilatérale et portant, sur chacune. de ses faces opposées, qui constituent le côté inférieur et le côté supérieur de la cellule solaire 2, un système de pistes conductrices structuré laissant à découvert des zones de surface essentielles. Les systèmes de pistes conductrices sont désignés par les références 4 et 5 et le système de pistes conductrices supérieur 4 est relié électriquement à une pièce de liaison 6. La cellule solaire 2 se termine à sa partie supérieure par un verre couvrant 7 collé de préférence au moyen d'un adhésif transparent.La couche d'adhésif correspondante est désignée par la référence 8. The figure is a side view schematically representing, without respecting scale, a solar cell 2 placed on a mSx * carrying rat 1. This solar cell is constituted by a semiconductor body 3 designed for bilateral irradiation and carrying , on each. from its opposite faces, which constitute the lower side and the upper side of the solar cell 2, a system of structured conductive tracks leaving exposed essential surface areas. The conductive track systems are designated by the references 4 and 5 and the upper conductive track system 4 is electrically connected to a connecting piece 6. The solar cell 2 ends at its upper part by a covering glass 7 preferably glued to the by means of a transparent adhesive The corresponding adhesive layer is designated by the reference 8.

Entre le substrat porteur 1, qui peut être une structure dite rigide et non transparente, et le corps semi-conducteur 3, le dispositif compote un moyen réfléchissant 9. Les propriétés optiques de ce moyen 9, qui est constitué par ~ exemple par une feuille mince de n'importe quel matériau réfléchissant ou par de l'aluminium, sont adaptées aux propriétés du système. La liaison mécanique entre le corps semi-conducteur 2 et le moyen réfléchissant 9 est assurée par un adhésif transparent formant une couChe désignée au dessin par la référence 10. Le moyen 9 peut être collé sur le substrat porteur 1 ou encore faire partie intégrante de ce substrat porteur. Between the carrier substrate 1, which can be a so-called rigid and non-transparent structure, and the semiconductor body 3, the device compotes a reflecting means 9. The optical properties of this means 9, which consists for example of a sheet thin of any reflective material or by aluminum, are adapted to the properties of the system. The mechanical connection between the semiconductor body 2 and the reflecting means 9 is provided by a transparent adhesive forming a layer designated in the drawing by the reference 10. The means 9 can be bonded to the carrier substrate 1 or even be an integral part of it. carrier substrate.

Le moyen réfléchissant 9 réfléchit le rayonnement
IR qui pénètre par le côté supérieur de la cellule solaire 2 et traverse le corps semi-conducteur 3. Dans ces conditions, le rayonnement IR réfléchit, pénètre donc à nouveau dans le corps semi-conducteur 3 à partir du côté inférieur de la cellule solaire 1. Il en résulte qu'aucune fraction du rayonnement IR ne peut être absorbée par le substrat porteur 1. La cellule solaire 1 ne subit donc aucune élévation de température. On obtient donc une optimisation optique et thermique et, par conséquent, une amélioration notable du rendement électrique, qui augmente de 7 % environ. The reflecting means 9 reflects the radiation
IR which penetrates through the upper side of the solar cell 2 and passes through the semiconductor body 3. Under these conditions, the IR radiation reflects, therefore penetrates again into the semiconductor body 3 from the lower side of the solar cell 1. As a result, no fraction of the IR radiation can be absorbed by the carrier substrate 1. The solar cell 1 therefore does not undergo any rise in temperature. Optical and thermal optimization is therefore obtained and, consequently, a notable improvement in electrical efficiency, which increases by approximately 7%.

Claims (7)

REVENDICATION.S 1. Cellule solaire utilisable dans des générateurs solaires photovoltalques et constituée par un corps semiconducteur en forme de disque placé sur un substrat porteur qui est conçu pour une irradiation bilatérale et dont les faces opposées, qui constituent le côté inférieur et le côté supérieur de la cellule solaire, portent chacun un système de pistes conductrices structuré qui laisse à découvert des zones essentielles de la surface, caractérisé en ce qu'entre le côté supérieur du substrat porteur (1) et le côté inférieur du corps semi-conducteur (3) la cellule comprend un moyen réfléchissant (9) qui réfléchit le rayonnement IR qui pénètre par la face supérieure de la cellule solaire (2) et traverse le corps semi-conducteur (3)  1. Solar cell usable in photovoltaic solar generators and constituted by a disc-shaped semiconductor body placed on a carrier substrate which is designed for bilateral irradiation and whose opposite faces, which constitute the lower side and the upper side of the cell solar, each carry a structured conductive track system which uncovers essential areas of the surface, characterized in that between the upper side of the carrier substrate (1) and the lower side of the semiconductor body (3) the cell comprises a reflecting means (9) which reflects the IR radiation which penetrates through the upper face of the solar cell (2) and passes through the semiconductor body (3) 2.Générateur solaire selon la revendication 1, caractérisé en ce que les propriétés optiques du moyen (9) sont adpatées aux propriétés du système. 2. Solar generator according to claim 1, characterized in that the optical properties of the means (9) are adapted to the properties of the system. 3. Générateur-solaire selon l'une des revendications 1 ou 2, caractérisé en ce que le moyen réfléchissant (9) est constitué par une feuille mince. 3. Solar generator according to one of claims 1 or 2, characterized in that the reflecting means (9) consists of a thin sheet. 4.. Générateur solaire selon la revendication 3, caractérisé en ce qu'il comprend une feuille mince en aluminium. 4 .. Solar generator according to claim 3, characterized in that it comprises a thin aluminum sheet. 5. Générateur solaire selon 11 une des revendications 1,2,3 ou 4, caractérisé en ce que la liaison mécanique entre le côté inférieur de la cellule solaire (2) et le moyen réfléchissant (9) est assurée par un adhésif transparent (10). 5. Solar generator according to one of claims 1,2,3 or 4, characterized in that the mechanical connection between the lower side of the solar cell (2) and the reflecting means (9) is provided by a transparent adhesive (10 ). 6. Générateur solaire ~selon l'une des revendications 1 à 5, caractérisé en ce que le moyen réfléchissant (9) est collé sur le substrat porteur (1). 6. Solar generator ~ according to one of claims 1 to 5, characterized in that the reflecting means (9) is bonded to the carrier substrate (1). 7. Générateur solaire selon l'une des revendications 1 à 5, caractérisé en ce que le moyen réfléchissant (9) fait partie intégrante du substrat porteur (1).  7. Solar generator according to one of claims 1 to 5, characterized in that the reflecting means (9) is an integral part of the carrier substrate (1).
FR868600436A 1985-01-24 1986-01-14 SOLAR CELL FOR PHOTOVOLTAIC SOLAR GENERATORS Expired FR2576453B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853502218 DE3502218A1 (en) 1985-01-24 1985-01-24 Solar cell which can be used for photovoltaic solar generators

Publications (2)

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FR2576453A1 true FR2576453A1 (en) 1986-07-25
FR2576453B1 FR2576453B1 (en) 1989-05-26

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FR868600436A Expired FR2576453B1 (en) 1985-01-24 1986-01-14 SOLAR CELL FOR PHOTOVOLTAIC SOLAR GENERATORS

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FR (1) FR2576453B1 (en)
NL (1) NL8600001A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3815512C2 (en) * 1988-05-06 1994-07-28 Deutsche Aerospace Solar cell and process for its manufacture
DE3943516C2 (en) * 1989-02-07 1993-11-25 Kunert Heinz Transparent element for use as a window, wall, roof or parapet element
WO1999001893A2 (en) 1997-06-30 1999-01-14 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
DE19730975A1 (en) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Porous material especially single crystal silicon layer production

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355196A (en) * 1981-03-11 1982-10-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell having improved back surface reflector
GB2116775A (en) * 1982-03-18 1983-09-28 Energy Conversion Devices Inc Photovoltaic device
US4442310A (en) * 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
EP0112646A2 (en) * 1982-11-22 1984-07-04 Exxon Research And Engineering Company Photovoltaic device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0167231A1 (en) * 1984-05-02 1986-01-08 Energy Conversion Devices, Inc. Photoresponsive device incorporating improved back reflector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4355196A (en) * 1981-03-11 1982-10-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell having improved back surface reflector
GB2116775A (en) * 1982-03-18 1983-09-28 Energy Conversion Devices Inc Photovoltaic device
US4442310A (en) * 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
EP0112646A2 (en) * 1982-11-22 1984-07-04 Exxon Research And Engineering Company Photovoltaic device

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Publication number Publication date
NL8600001A (en) 1986-08-18
FR2576453B1 (en) 1989-05-26
DE3502218A1 (en) 1986-07-24

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