FR2551266B1 - Element photoconducteur utilisable en electrophotographie - Google Patents

Element photoconducteur utilisable en electrophotographie

Info

Publication number
FR2551266B1
FR2551266B1 FR848413086A FR8413086A FR2551266B1 FR 2551266 B1 FR2551266 B1 FR 2551266B1 FR 848413086 A FR848413086 A FR 848413086A FR 8413086 A FR8413086 A FR 8413086A FR 2551266 B1 FR2551266 B1 FR 2551266B1
Authority
FR
France
Prior art keywords
electrophotography
photoconductive element
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR848413086A
Other languages
English (en)
French (fr)
Other versions
FR2551266A1 (fr
Inventor
Keishi Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2551266A1 publication Critical patent/FR2551266A1/fr
Application granted granted Critical
Publication of FR2551266B1 publication Critical patent/FR2551266B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
FR848413086A 1983-08-23 1984-08-22 Element photoconducteur utilisable en electrophotographie Expired - Lifetime FR2551266B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58153673A JPS6045257A (ja) 1983-08-23 1983-08-23 電子写真用光導電部材

Publications (2)

Publication Number Publication Date
FR2551266A1 FR2551266A1 (fr) 1985-03-01
FR2551266B1 true FR2551266B1 (fr) 1991-03-15

Family

ID=15567667

Family Applications (1)

Application Number Title Priority Date Filing Date
FR848413086A Expired - Lifetime FR2551266B1 (fr) 1983-08-23 1984-08-22 Element photoconducteur utilisable en electrophotographie

Country Status (5)

Country Link
US (1) US4571370A (US20080293856A1-20081127-C00150.png)
JP (1) JPS6045257A (US20080293856A1-20081127-C00150.png)
DE (1) DE3430913A1 (US20080293856A1-20081127-C00150.png)
FR (1) FR2551266B1 (US20080293856A1-20081127-C00150.png)
GB (1) GB2147713B (US20080293856A1-20081127-C00150.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812932B2 (ja) * 1985-12-06 1996-02-07 キヤノン株式会社 フォトセンサアレイ
JP4171428B2 (ja) * 2003-03-20 2008-10-22 三洋電機株式会社 光起電力装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4471042A (en) * 1978-05-04 1984-09-11 Canon Kabushiki Kaisha Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium
JPS56150753A (en) * 1980-04-23 1981-11-21 Canon Inc Image forming member for electrophotography
DE3117037A1 (de) * 1980-05-08 1982-03-11 Takao Sakai Osaka Kawamura Elektrophotografisches, lichtempfindliches element
GB2095030B (en) * 1981-01-08 1985-06-12 Canon Kk Photoconductive member
JPS57115552A (en) * 1981-01-08 1982-07-19 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic receptor
JPS57172344A (en) * 1981-04-17 1982-10-23 Minolta Camera Co Ltd Electrophotographic photorecepter
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member

Also Published As

Publication number Publication date
US4571370A (en) 1986-02-18
JPS6045257A (ja) 1985-03-11
GB8420727D0 (en) 1984-09-19
FR2551266A1 (fr) 1985-03-01
DE3430913A1 (de) 1985-03-21
GB2147713B (en) 1987-01-28
DE3430913C2 (US20080293856A1-20081127-C00150.png) 1988-12-01
GB2147713A (en) 1985-05-15
JPH0217023B2 (US20080293856A1-20081127-C00150.png) 1990-04-19

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