FR2548219B1 - Procede de formation d'une couche de matiere a constituants multiples - Google Patents

Procede de formation d'une couche de matiere a constituants multiples

Info

Publication number
FR2548219B1
FR2548219B1 FR8409208A FR8409208A FR2548219B1 FR 2548219 B1 FR2548219 B1 FR 2548219B1 FR 8409208 A FR8409208 A FR 8409208A FR 8409208 A FR8409208 A FR 8409208A FR 2548219 B1 FR2548219 B1 FR 2548219B1
Authority
FR
France
Prior art keywords
forming
material layer
multiple constituents
constituents
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8409208A
Other languages
English (en)
Other versions
FR2548219A1 (fr
Inventor
John Murray Gibson
Dale Conrad Jacobson
John Milo Poate
Raymond Tzutse Tung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of FR2548219A1 publication Critical patent/FR2548219A1/fr
Application granted granted Critical
Publication of FR2548219B1 publication Critical patent/FR2548219B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10D64/0112—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/14—Schottky barrier contacts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR8409208A 1983-06-20 1984-06-13 Procede de formation d'une couche de matiere a constituants multiples Expired FR2548219B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/506,069 US4555301A (en) 1983-06-20 1983-06-20 Formation of heterostructures by pulsed melting of precursor material

Publications (2)

Publication Number Publication Date
FR2548219A1 FR2548219A1 (fr) 1985-01-04
FR2548219B1 true FR2548219B1 (fr) 1989-06-02

Family

ID=24013041

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8409208A Expired FR2548219B1 (fr) 1983-06-20 1984-06-13 Procede de formation d'une couche de matiere a constituants multiples

Country Status (6)

Country Link
US (1) US4555301A (fr)
JP (1) JPS6011292A (fr)
DE (1) DE3422750A1 (fr)
FR (1) FR2548219B1 (fr)
GB (1) GB2142346B (fr)
NL (1) NL8401927A (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4549913A (en) * 1984-01-27 1985-10-29 Sony Corporation Wafer construction for making single-crystal semiconductor device
US4564403A (en) * 1984-01-27 1986-01-14 Sony Corporation Research Center Single-crystal semiconductor devices and method for making them
US4707197A (en) * 1984-08-02 1987-11-17 American Telephone And Telegraph Company, At&T Bell Laboratories Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method
US4681795A (en) * 1985-06-24 1987-07-21 The United States Of America As Represented By The Department Of Energy Planarization of metal films for multilevel interconnects
US4674176A (en) * 1985-06-24 1987-06-23 The United States Of America As Represented By The United States Department Of Energy Planarization of metal films for multilevel interconnects by pulsed laser heating
JP2580143B2 (ja) * 1985-11-22 1997-02-12 アメリカン テレフオン アンド テレグラフ カムパニ− ヘテロエピタキシャル構造を有する物品の製造方法
US4814294A (en) * 1987-07-30 1989-03-21 Allied-Signal Inc. Method of growing cobalt silicide films by chemical vapor deposition
US4935382A (en) * 1987-10-30 1990-06-19 American Telephone And Telegraph Company Method of making a semiconductor-insulator-semiconductor structure
US5010037A (en) * 1988-10-14 1991-04-23 California Institute Of Technology Pinhole-free growth of epitaxial CoSi2 film on Si(111)
US5075243A (en) * 1989-08-10 1991-12-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of nanometer single crystal metallic CoSi2 structures on Si
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
KR960008503B1 (en) 1991-10-04 1996-06-26 Semiconductor Energy Lab Kk Manufacturing method of semiconductor device
US5290715A (en) * 1991-12-31 1994-03-01 U.S. Philips Corporation Method of making dielectrically isolated metal base transistors and permeable base transistors
JP2611726B2 (ja) * 1993-10-07 1997-05-21 日本電気株式会社 半導体装置の製造方法
US5888888A (en) * 1997-01-29 1999-03-30 Ultratech Stepper, Inc. Method for forming a silicide region on a silicon body
US6156654A (en) * 1998-12-07 2000-12-05 Chartered Semiconductor Manufacturing Ltd. Pulsed laser salicidation for fabrication of ultra-thin silicides in sub-quarter micron devices
WO2000065642A1 (fr) * 1999-04-26 2000-11-02 Shin-Etsu Handotai Co., Ltd. Procedes de production d'un monocristal de compose semiconducteur et d'un element de compose semiconducteur
EP1437764A1 (fr) * 2003-01-10 2004-07-14 S.O.I. Tec Silicon on Insulator Technologies S.A. Substrat adaptatif pour hétéroépitaxie, structure épitaxiale et méthode de fabrication d'un substrat adaptatif
US7488635B2 (en) * 2005-10-26 2009-02-10 Freescale Semiconductor, Inc. Semiconductor structure with reduced gate doping and methods for forming thereof
US8779445B2 (en) * 2008-07-02 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Stress-alleviation layer for LED structures
WO2011109702A2 (fr) * 2010-03-05 2011-09-09 Cornell University Nanostructures monocristallines alignées de manière épitaxiale et procédés associés
RU2543685C2 (ru) * 2013-01-14 2015-03-10 Николай Иннокентьевич Плюснин Композитный наноматериал
RU2528581C1 (ru) * 2013-03-06 2014-09-20 Федеральное государственное бюджетное учреждение науки Институт автоматики и процессов управления Дальневосточного отделения Российской академии наук (ИАПУ ДВО РАН) Способ получения слоистого наноматериала

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1244732B (de) * 1963-10-22 1967-07-20 Siemens Ag Verfahren zum einseitigen, epitaktischen Aufwachsen einkristalliner Schichten aus Verbindungshalbleitern
US3585088A (en) * 1968-10-18 1971-06-15 Ibm Methods of producing single crystals on supporting substrates
DE2053536C3 (de) * 1970-10-31 1980-08-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Herstellung eines Verbindungshalbleitermaterials
US4284467A (en) * 1972-02-14 1981-08-18 Hewlett-Packard Company Method for making semiconductor material
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
JPS54162980A (en) * 1978-06-14 1979-12-25 Fujitsu Ltd Manufacture of semiconductor device
JPS55115341A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS5623781A (en) * 1979-08-02 1981-03-06 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
JPS5658224A (en) * 1979-10-16 1981-05-21 Chiyou Lsi Gijutsu Kenkyu Kumiai Growing method of hetero epitaxial layer
JPS5674921A (en) * 1979-11-22 1981-06-20 Toshiba Corp Manufacturing method of semiconductor and apparatus thereof
US4279688A (en) * 1980-03-17 1981-07-21 Rca Corporation Method of improving silicon crystal perfection in silicon on sapphire devices
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation
JPS5723218A (en) * 1980-07-18 1982-02-06 Fujitsu Ltd Manufacture of semiconductor device
US4359486A (en) * 1980-08-28 1982-11-16 Siemens Aktiengesellschaft Method of producing alloyed metal contact layers on crystal-orientated semiconductor surfaces by energy pulse irradiation
US4359485A (en) * 1981-05-01 1982-11-16 Bell Telephone Laboratories, Incorporated Radiation induced deposition of metal on semiconductor surfaces
GB2114809B (en) * 1982-02-04 1986-02-05 Standard Telephones Cables Ltd Metallic silicide production
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer

Also Published As

Publication number Publication date
FR2548219A1 (fr) 1985-01-04
DE3422750A1 (de) 1984-12-20
US4555301A (en) 1985-11-26
GB2142346A (en) 1985-01-16
NL8401927A (nl) 1985-01-16
JPS6011292A (ja) 1985-01-21
GB8415146D0 (en) 1984-07-18
GB2142346B (en) 1987-02-04

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Legal Events

Date Code Title Description
ST Notification of lapse