FR2533754A1 - Method of manufacturing solar cells - Google Patents
Method of manufacturing solar cells Download PDFInfo
- Publication number
- FR2533754A1 FR2533754A1 FR8216016A FR8216016A FR2533754A1 FR 2533754 A1 FR2533754 A1 FR 2533754A1 FR 8216016 A FR8216016 A FR 8216016A FR 8216016 A FR8216016 A FR 8216016A FR 2533754 A1 FR2533754 A1 FR 2533754A1
- Authority
- FR
- France
- Prior art keywords
- sealing
- solar cells
- glass plate
- ink
- silane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 7
- 239000000976 ink Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 239000011230 binding agent Substances 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000000843 powder Substances 0.000 claims description 6
- 238000004017 vitrification Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000000197 pyrolysis Methods 0.000 claims description 5
- 238000010411 cooking Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008030 elimination Effects 0.000 claims description 4
- 238000003379 elimination reaction Methods 0.000 claims description 4
- 239000008246 gaseous mixture Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Procédé de fabrication de ccllules solaires
La présente invention concerne un procédé de fabrication de modules de cellules solaires à partir de disques de silicium comportant une jonction semi-conductrice, -comportant les opérations suivantes - réalisation de contacts arrières pour la collecte du courant sur la face arrière des disques de silicium, - dépôt par sérigraphie sur la face arrière d'une plaque de verre d'une encre à former des aires de scellement correspondant aux différents disques de silicium, comprenant au moins un solvant, un liant et une poudre de verre, - vitrification de ce dépôt par traitement thermique, - dépôt par sérigraphie sur la face arrière de la plaque de verre d'une encre destinée à former des reprises de contact, comprenant au moins un solvant, un liant et une poudre de métal conducteur, et cuisson de cette encre, - dépôt par. sérigraphie d'une encre destinée à former des grilles collectrices de courant sur la face avant des disques de silicium dans des zones complémentaires de celles des aires de scellement, - élimination des produits organiques contenus dans l'encre, et cuisson de celle-ci, - traitement réducteur des cellules solaires formées, - mise en place sur les aires de scellement de la plaque de verre des cellules solaires, - traitement thermique.de scellement.Method for manufacturing solar cells
The present invention relates to a method for manufacturing solar cell modules from silicon discs comprising a semiconductor junction, -comporting the following operations - making rear contacts for collecting current on the rear face of the silicon discs, - deposit by screen printing on the rear face of a glass plate of an ink to form sealing areas corresponding to the various silicon discs, comprising at least one solvent, a binder and a glass powder, - vitrification of this deposit by heat treatment, - deposition by screen printing on the rear face of the glass plate of an ink intended to form contact resumptions, comprising at least one solvent, a binder and a conductive metal powder, and baking of this ink, - deposit by. screen printing of an ink intended to form current collecting grids on the front face of the silicon discs in areas complementary to those of the sealing areas, - elimination of organic products contained in the ink, and cooking thereof, - reducing treatment of the solar cells formed, - placing on the sealing areas of the glass plate of the solar cells, - heat treatment of sealing.
Un procédé de ce genre a fait l'objet de la demande de brevet FR
A-2 457 015 du 14 mai 1979 au nom de la Demanderesse. Dans celui-ci, le scellement des cellules solaires sur la plaque de verre est effectué par cuisson en présence d'air à 5500 - 600tu pendant 10 minutes sous une pression comprise entre 0,25 et 1 bar.A process of this kind was the subject of the patent application FR
A-2 457 015 of May 14, 1979 in the name of the Claimant. In this, the sealing of the solar cells on the glass plate is carried out by cooking in the presence of air at 5500 - 600 tu for 10 minutes under a pressure between 0.25 and 1 bar.
On a cependant constaté que les cellules encapsulées selon de tels procédés présentaient des caractéristiques électriques dispersées, et que notamment certaines d'entre elles présentaient une résistance série excessive et/ou une tension en circuit ouvert trop faible. However, it has been found that the cells encapsulated according to such methods had dispersed electrical characteristics, and that in particular some of them exhibited an excessive series resistance and / or an open circuit voltage which is too low.
La présente invention a pour but de remédier à ces difficultés, et de procurer un procédé de fabrication de cellules solaires procurant des cellules de caractéristiques électriques suffisantes et sensiblement constantes après encapsulation, et par suite un prix de revient des modules photovoltaiques plus faible. The present invention aims to remedy these difficulties, and to provide a method of manufacturing solar cells providing cells with sufficient electrical characteristics and substantially constant after encapsulation, and consequently a lower cost price of photovoltaic modules.
Le procédé selon l'invention est caractérisé en ce que le traitement thermique de scellement est effectué en présence d'un gaz non oxydant, mais non réducteur. The method according to the invention is characterized in that the heat sealing treatment is carried out in the presence of a non-oxidizing, but non-reducing gas.
Il répond en outre de préférence à au moins l'une des caractéristiques suivantes - Le gaz non oxydant, mais non réducteur, est l'azote. It also preferably meets at least one of the following characteristics - The non-oxidizing, but non-reducing gas is nitrogen.
- Le traitement thermique de scellement comprend un chauffage pendant quelques minutes à 6500C environ, avec une mise en pression, un refroidissement jusqu'à #000C environ, puis un recuit à cette dernière température pendant environ 30 minutes.- The heat sealing treatment includes heating for a few minutes to around 6500C, with pressurization, cooling down to around # 000C, then annealing at this latter temperature for around 30 minutes.
- Le traitement thermique de vitrification du dépôt sur la face arrière de la plaque de verre comporte un chauffage à environ 6500c pendant environ 10 minutes en présence d'air.- The heat treatment of vitrification of the deposit on the rear face of the glass plate comprises heating to approximately 6500c for approximately 10 minutes in the presence of air.
- L'élimination des produits organiques contenus dans les encres est effectuée par évaporation des solvants à 1500C, puis pyrolyse des liants à 3500C environ.- The elimination of organic products contained in the inks is carried out by evaporation of the solvents at 1500C, then pyrolysis of the binders at around 3500C.
- On dépose sur la face avant des cellules solaires avant leur scellement une couche de nitrure de silicium par mise en contact de ces disques avec un mélange gazeux de silane et d'azote pauvre en silane à environ 3000C. - A layer of silicon nitride is deposited on the front face of the solar cells before they are sealed by bringing these discs into contact with a gaseous mixture of silane and nitrogen poor in silane at around 3000C.
- On dépose sur la face avant des disques de silicium une couche de nitrure de silicium d'épaisseur supérieure à 700 angströms, et de préférence d'environ 1300 angstroms.- A layer of silicon nitride with a thickness greater than 700 angstroms, and preferably around 1300 angstroms, is deposited on the front face of the silicon discs.
- Le mélange gazeux de silane et d'azote est à 2% environ en volume de silane.- The gaseous mixture of silane and nitrogen is approximately 2% by volume of silane.
Il est décrit ci-après à titre d'exemple un procédé de fabrication de modules de cellules solaires selon l'invention. A method of manufacturing solar cell modules according to the invention is described below by way of example.
On réalise sur la face arrière de disques de silicium monocristallin, par exemple de 100 mm de diamètre et 300 microns d'épaisseur et 0,55 micron de profondeur de jonction, des contacts arrière pour la collecte de courant, par dépôt par sérigraphie d'une encre conductrice à l'argent dopée à l'aluminium, contenant par exemple 3% de poudre deverre, puis séchage et cuisson de cette encre à 65000 pendant 10 minutes en présence d'air. Monocrystalline silicon discs, for example 100 mm in diameter and 300 microns thick and 0.55 micron in junction depth, are produced on the rear face, for rear current collection, by screen printing a silver conductive ink doped with aluminum, containing for example 3% glass powder, then drying and curing of this ink at 65,000 for 10 minutes in the presence of air.
On dépose par sérigraphie sur une plaque de verre Pyrex de 3 à 6 mm d'épaisseur une encre diélectrique comportant des solvants, des liants organiques et une poudre de verre, évapore les solvants par chauffage à 15O0C, élimine les liants organiques par pyrolyse à 350qu, puis effectue une vitrification de ces dépôts par traitement thermique à 65000 pendant 10 minutes à l'air, de façon à constituer des aires de scellement sur la plaque de verre
On dépose sur la plaque de verre Pyrex des reprises de contact par sérigraphie d'une encre conductrice, on évapore les solvants, pyrolyse les liants organiques et vitrifie les reprises de contact par cuisson à 65000 pendant 10 minutes à l'air. A dielectric ink comprising solvents, organic binders and a glass powder is deposited by screen printing on a Pyrex glass plate 3 to 6 mm thick, the solvents are evaporated by heating at 15 ° C., the organic binders are removed by pyrolysis at 350 μm. , then performs a vitrification of these deposits by heat treatment at 65,000 for 10 minutes in air, so as to form sealing areas on the glass plate
Contact resumes are deposited on the Pyrex glass plate by screen printing of a conductive ink, the solvents are evaporated, pyrolysis of the organic binders and vitrification of the contact resets by cooking at 65,000 for 10 minutes in air.
On dépose par sérigraphie sur la face avant des disques de silicium une encre à l'argent destinée à former la grille conductrice de courant, selon un masque complémentaire des aires de scellement, et élimine les solvants par évaporation à 15000, les liants organiques par pyrolyse à 35000, et effectue la cuisson#de la grille conductrice à 70000 pendant 10 minutes à l'air. A silver ink intended to form the current conducting grid is deposited by screen printing on the front of the silicon discs, according to a mask complementary to the sealing areas, and the solvents are removed by evaporation at 15000, the organic binders by pyrolysis at 35,000, and cooks # the conductive grid at 70,000 for 10 minutes in air.
On soumet alors les cellules solaires ainsi formées à un traitement réducteur par recuit sous hydrogène à 110000 pendant 30 minutes de façon à réduire la résistance série des cellules. The solar cells thus formed are then subjected to a reducing treatment by annealing under hydrogen at 110000 for 30 minutes so as to reduce the series resistance of the cells.
On dépose sur la face avant des cellules une couche de nitrure de silicium par mise en contact de cette face avec un mélange de silane et d'azote à 2% de silane, à une température de 30000, Jusqu'à formation d'une couche barrière de 1300 ou de 800 angstr8ms d'épaisseur. A layer of silicon nitride is deposited on the front face of the cells by bringing this face into contact with a mixture of silane and nitrogen with 2% silane, at a temperature of 30,000, until a layer is formed. barrier of 1300 or 800 angstr8ms thick.
On met alors les cellules solaires en place sur les aires de scellement de la plaque de verre, puis effectue leur scellement par traitement thermique en présence d'azote. A cet effet, on élève la température de 2000 par minute jusqu'à 65000, maintient les cellules à 65000 pendant 3 minutes, en les mettant en pression sous 2 bars pendant 2 minutes. On abaisse la température à 450qu en 12 minutes, puis soumet les cellules à un recuit de 30 minutes à 40000. On les laisse enfin refroidir lentement. The solar cells are then put in place on the sealing areas of the glass plate, then performs their sealing by heat treatment in the presence of nitrogen. To this end, the temperature is raised from 2000 per minute to 65000, the cells are kept at 65000 for 3 minutes, by putting them under pressure at 2 bars for 2 minutes. The temperature is lowered to 450qu in 12 minutes, then the cells are annealed for 30 minutes at 40,000. Finally, they are allowed to cool slowly.
De façon connue, on isole les faces avant et arrière des cellules par des plots isolants en verre, obtenus par impression d'un verre de scellement. La figure unique du dessin représente les caractéristiques électriques (intensité I en ampères en fonction de la tension V en volts) pour une cellule venant d'entre fabriquée avant son traitement de scellement (courbe I), et pour des cellules comportant des couches barrières de nitrure de silicium (obtenues selon le mode opératoire ci-dessus) de 1300 et 800 angströms (respectivement courbes Il et III), ainsi que pour une cellule sans couche barrière (courbe IV), toutes ces cellules ayant subi le traitement de scellement sous atmosphère d'azote. In known manner, the front and rear faces of the cells are isolated by glass insulating pads, obtained by printing a sealing glass. The single figure of the drawing represents the electrical characteristics (intensity I in amperes as a function of the voltage V in volts) for a cell coming from manufactured before its sealing treatment (curve I), and for cells comprising barrier layers of silicon nitride (obtained according to the above procedure) of 1300 and 800 angstroms (respectively curves II and III), as well as for a cell without barrier layer (curve IV), all these cells having undergone the sealing treatment under atmosphere nitrogen.
On -voit que les caractéristiques de la cellule sont fortement dégradées si elle ne comporte pas de couche barrière, et que la cellule à couche barrière de nitrure de silicium de 1300 angströms reproduit sensiblement la caractéristique de la cellule initiale, avant son traitement de scellement. It can be seen that the characteristics of the cell are greatly degraded if it does not contain a barrier layer, and that the cell with a barrier layer of silicon nitride of 1300 angstroms substantially reproduces the characteristic of the initial cell, before its sealing treatment.
Bien que la présente invention soit indépendante d'une explication théorique des phénomènes, on peut penser que la mise en place d'une couche de nitrure de silicium entre les disques de silicium et la plaque de verre évite la diffusion d'éléments métalliques provenant du verre dans les disques de silicium, et par suite une pollution de la jonction entraînant la diminution de la tension en circuit ouvert de la cellule. Although the present invention is independent of a theoretical explanation of the phenomena, it may be thought that the installation of a layer of silicon nitride between the silicon discs and the glass plate prevents the diffusion of metallic elements originating from the glass in the silicon discs, and consequently pollution of the junction resulting in the reduction of the open circuit voltage of the cell.
Quant au traitement thermique de scellement sous azote, il évite l'oxydation des contacts qui se produirait lors d'un traitement à l'air, et augmenterait la résistance série de la cellule. As for the heat treatment of sealing under nitrogen, it avoids the oxidation of the contacts which would occur during an air treatment, and would increase the series resistance of the cell.
Les cellules ainsi encapsulées présentent d'excellentes caractéristiques électriques. Elles ont été soumises à des cycles thermiques entre - 400 et + 900C qui n'ont entraîné aucune modification de leurs caractéristiques. The cells thus encapsulated have excellent electrical characteristics. They were subjected to thermal cycles between - 400 and + 900C which did not involve any modification of their characteristics.
Les modes opératoires de dépôt de la couche barrière et de traitement de scellement sous azote qui viennent d'être décrits paraissent la forme de réalisation préférable de l'invention. On comprendra cependant que diverses modifications peuvent leur être apportés sans sortir du cadre de l'invention, certaines opérations ou certains réactifs pouvant être remplacés par d'autres qui joueraient le même rôle technique. En particulier, le traitement thermique de scellement pourrait être effectué sous un gaz non oxydant et non réducteur autre que l'azote, par exemple un gaz rare. The procedures for depositing the barrier layer and sealing treatment under nitrogen which have just been described appear to be the preferable embodiment of the invention. It will however be understood that various modifications can be made to them without departing from the scope of the invention, certain operations or certain reagents being able to be replaced by others which would play the same technical role. In particular, the heat sealing treatment could be carried out under a non-oxidizing and non-reducing gas other than nitrogen, for example a rare gas.
De la manière habituelle, on peut enfin former un module photovoltaique par mise en série des différentes cellules, en réalisant des connexions entre les plots conducteurs -et la face arrière des cellules par impression d'une encre conductrice, puis pulvérisation d'un verre de scellement ou d'un émail sur la face arrière du module pour obtenir une couche de protection de ce dernier In the usual way, it is finally possible to form a photovoltaic module by placing the different cells in series, by making connections between the conductive pads - and the rear face of the cells by printing a conductive ink, then spraying a glass of sealing or enamel on the rear side of the module to obtain a protective layer of the latter
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8216016A FR2533754A1 (en) | 1982-09-23 | 1982-09-23 | Method of manufacturing solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8216016A FR2533754A1 (en) | 1982-09-23 | 1982-09-23 | Method of manufacturing solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2533754A1 true FR2533754A1 (en) | 1984-03-30 |
Family
ID=9277669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8216016A Pending FR2533754A1 (en) | 1982-09-23 | 1982-09-23 | Method of manufacturing solar cells |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2533754A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0674865A1 (en) * | 1994-03-28 | 1995-10-04 | ISOCLIMA S.p.A. | Improved insulating glazing unit with heating elements |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
| LU78143A1 (en) * | 1977-09-19 | 1979-05-25 | En Nouvelles Et Environnement | IMPROVEMENTS TO PHOTOVOLTAIC CELLS AS WELL AS TO PHOTOVOLTAIC PANELS |
| FR2481522A1 (en) * | 1980-04-29 | 1981-10-30 | Comp Generale Electricite | Solar cell mfr. using single firing step - by utilising simultaneously fireable screen printing inks for application of dopants, contacts, leads and encapsulant |
| FR2488447A1 (en) * | 1980-08-06 | 1982-02-12 | Comp Generale Electricite | Encapsulation of photovoltaic cells used in modules - where each cell is dipped in glass slurry and then heated to form sealed vitreous coating |
| EP0052791A1 (en) * | 1980-11-26 | 1982-06-02 | E.I. Du Pont De Nemours And Company | Aluminum-magnesium alloys in low resistance contacts to silicon coated with Si3N4 |
| EP0054706A1 (en) * | 1980-12-19 | 1982-06-30 | E.I. Du Pont De Nemours And Company | Process of metallizing a silicon solar cell |
-
1982
- 1982-09-23 FR FR8216016A patent/FR2533754A1/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
| LU78143A1 (en) * | 1977-09-19 | 1979-05-25 | En Nouvelles Et Environnement | IMPROVEMENTS TO PHOTOVOLTAIC CELLS AS WELL AS TO PHOTOVOLTAIC PANELS |
| FR2481522A1 (en) * | 1980-04-29 | 1981-10-30 | Comp Generale Electricite | Solar cell mfr. using single firing step - by utilising simultaneously fireable screen printing inks for application of dopants, contacts, leads and encapsulant |
| FR2488447A1 (en) * | 1980-08-06 | 1982-02-12 | Comp Generale Electricite | Encapsulation of photovoltaic cells used in modules - where each cell is dipped in glass slurry and then heated to form sealed vitreous coating |
| EP0052791A1 (en) * | 1980-11-26 | 1982-06-02 | E.I. Du Pont De Nemours And Company | Aluminum-magnesium alloys in low resistance contacts to silicon coated with Si3N4 |
| EP0054706A1 (en) * | 1980-12-19 | 1982-06-30 | E.I. Du Pont De Nemours And Company | Process of metallizing a silicon solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0674865A1 (en) * | 1994-03-28 | 1995-10-04 | ISOCLIMA S.p.A. | Improved insulating glazing unit with heating elements |
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