FR2529014B1 - - Google Patents

Info

Publication number
FR2529014B1
FR2529014B1 FR8210893A FR8210893A FR2529014B1 FR 2529014 B1 FR2529014 B1 FR 2529014B1 FR 8210893 A FR8210893 A FR 8210893A FR 8210893 A FR8210893 A FR 8210893A FR 2529014 B1 FR2529014 B1 FR 2529014B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8210893A
Other versions
FR2529014A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to FR8210893A priority Critical patent/FR2529014A1/fr
Publication of FR2529014A1 publication Critical patent/FR2529014A1/fr
Application granted granted Critical
Publication of FR2529014B1 publication Critical patent/FR2529014B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41708—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
FR8210893A 1982-06-22 1982-06-22 Tetrode bipolaire a semi-conducteurs Granted FR2529014A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8210893A FR2529014A1 (fr) 1982-06-22 1982-06-22 Tetrode bipolaire a semi-conducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8210893A FR2529014A1 (fr) 1982-06-22 1982-06-22 Tetrode bipolaire a semi-conducteurs

Publications (2)

Publication Number Publication Date
FR2529014A1 FR2529014A1 (fr) 1983-12-23
FR2529014B1 true FR2529014B1 (fr) 1985-01-11

Family

ID=9275269

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8210893A Granted FR2529014A1 (fr) 1982-06-22 1982-06-22 Tetrode bipolaire a semi-conducteurs

Country Status (1)

Country Link
FR (1) FR2529014A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3609460A (en) * 1968-06-28 1971-09-28 Rca Corp Power transistor having ballasted emitter fingers interdigitated with base fingers
US3890634A (en) * 1970-10-23 1975-06-17 Philips Corp Transistor circuit
US3902188A (en) * 1973-08-15 1975-08-26 Rca Corp High frequency transistor
SU864474A1 (ru) * 1975-06-18 1981-09-15 За витель Устройство дл управлени электродвигателем посто нного тока

Also Published As

Publication number Publication date
FR2529014A1 (fr) 1983-12-23

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Legal Events

Date Code Title Description
ST Notification of lapse