FR2527837A1 - ENCAPSULATION BOX OF A SEMICONDUCTOR DEVICE OPERATING AT VERY HIGH VOLTAGE, AND ITS MANUFACTURING METHOD - Google Patents
ENCAPSULATION BOX OF A SEMICONDUCTOR DEVICE OPERATING AT VERY HIGH VOLTAGE, AND ITS MANUFACTURING METHOD Download PDFInfo
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- FR2527837A1 FR2527837A1 FR8209048A FR8209048A FR2527837A1 FR 2527837 A1 FR2527837 A1 FR 2527837A1 FR 8209048 A FR8209048 A FR 8209048A FR 8209048 A FR8209048 A FR 8209048A FR 2527837 A1 FR2527837 A1 FR 2527837A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01063—Europium [Eu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
Description
BOîTIER D'ENCAPSULATION D'UN DISPOSITIF SEMICONDUCTEUR
FONCTIONNANT A TRES HAUTE TENSION,
ET SON PROCEDE DE FABRICATION
La présente invention concerne un boitier d'encapsulation pour semiconducteur, ce boitier étant adapté à un usage en très haute tension, c'est-a'- dire, à l'échelle des pastilles semiconductrices, des tensions de plusieurs milliers de volts. Dans le boitier selon l'invention, 'la pastille semiconductrice est isolée des parties métalliques du boitier, et, hormis les connexions de sorties, se trouve enfermée dans un boitier étanche totalement isolant, et sans aucune partie métallique dans l'épaisseur des parois du boitier.ENCAPSULATION BOX OF A SEMICONDUCTOR DEVICE
OPERATING AT VERY HIGH VOLTAGE,
AND MANUFACTURING METHOD THEREOF
The present invention relates to an encapsulation box for a semiconductor, this box being suitable for use in very high voltage, that is to say, on the scale of semiconductor wafers, voltages of several thousand volts. In the case according to the invention, the semiconductor wafer is isolated from the metal parts of the case, and, apart from the outlet connections, is enclosed in a completely insulating waterproof case, and without any metal part in the thickness of the walls of the housing.
L'invention sera décrite en s'appuyant sur l'exemple d'une diode, mais elle s'applique à d'autres dispositifs semiconducteurs tels que les transistors, les thyristors ou les triacs par exemple. La réalisation du dispositif semiconducteur lui-même, c'est-à-dire de la pastille, supportant des tensions de l'ordre de 3 000 Volts en inverse entre anode et cathode par exemple est un problème connexe mais indépendant de la présente invention. Par contre, la tenue en tension de 10 000 Volts entre la pastille de semiconducteur, dont les régions actives sont volontairement court-circuitées, et l'embase métallique du boitier, ou bien la tenue de cette même tension entre les connexions de sorties et l'embase du boitier sont des problèmes qui appartiennent au domaine de l'invention. The invention will be described using the example of a diode, but it applies to other semiconductor devices such as transistors, thyristors or triacs for example. The production of the semiconductor device itself, that is to say of the wafer, supporting voltages of the order of 3000 Volts in reverse between anode and cathode for example is a related problem but independent of the present invention. On the other hand, the voltage withstand of 10,000 volts between the semiconductor wafer, the active regions of which are intentionally short-circuited, and the metal base of the case, or else the behavior of this same voltage between the output connections and the 'base of the housing are problems which belong to the field of the invention.
Parmi les semiconducteurs connus, ceux qui sont étudiés pour supporter les tensions les plus élevées sont les transistors, dont certains sont prévus jusqu'à 1 000 Volts, et les diodes et redresseurs, qui ne dépassent pas 1 700 Volts environ. Mais dans ce dernier cas, les pastilles sont souvent encapsulées dans un boitier en verre, constitué par un tube de verre dont les deux extrémités sont fondues et soudées sur les connexions de sorties. Ce type de boitier verre ne permet pas de dissiper de la puissance, tandis que le boitier selon l'invention permet de dissiper de la puissance, et à cet effet il comporte une embase métallique de dissipation de la chaleur dégagée et une dalle isolante, interposée entre la pastille semiconductrice et l'embase métallique.En outre, le boitier selon l'invention comporte deux faces supérieure et inférieure et un cadre d'épaisseur, ces trois pièces étant en matière isolante et scellées entre elles sans aucun métal, formant une enceinte étanche qui évite tout courant de fuite ou arc électrique jusqu'au delà de 10 000 Volts. Among the known semiconductors, those which are studied to withstand the highest voltages are the transistors, some of which are provided up to 1000 Volts, and the diodes and rectifiers, which do not exceed about 1700 Volts. But in the latter case, the pellets are often encapsulated in a glass case, consisting of a glass tube, the two ends of which are melted and welded to the outlet connections. This type of glass box does not allow power to be dissipated, while the box according to the invention allows power to be dissipated, and for this purpose it comprises a metal base for dissipating the heat released and an insulating slab, interposed between the semiconductor wafer and the metal base. In addition, the housing according to the invention has two upper and lower faces and a thick frame, these three parts being made of insulating material and sealed together without any metal, forming an enclosure. waterproof which avoids any leakage current or electric arc beyond 10,000 Volts.
Ceci est obtenu en remplaçant les brasures de fixation ou de fermeture d'un boitier céramique par un scellement verre qui n'initie pas de courant de fuite. This is achieved by replacing the solder for fixing or closing a ceramic case with a glass seal which does not initiate leakage current.
De façon plus précise, l'invention concerne un boitier d'encapsulation d'un dispositif semiconducteur fonctionnant à très haute tension, rapporté par brasure sur un socle métallique de fixation et de dissipation thermique, ce boitier comportant une plaque de fond de boitier, un corps latéral et une plaque de couvercle de boitier et étant caractérisé en ce que, en premier lieu, le fond, le corps latéral et le couvercle sont en matériau isolant électrique de type céramique et, en second lieu, le fond et le couvercle sont fixés chacun à une extrémité du corps latéral par des scellements de verre, formant une cavité céramique étanche dont les seules parties métalliques qui la traversent sont les connexions d'accès au dispositif semiconducteur, ces connexions étant situées sur la face du boitier opposée à celle sur laquelle est brasée le socle métallique. More specifically, the invention relates to a casing for encapsulating a semiconductor device operating at very high voltage, attached by soldering on a metal base for fixing and heat dissipation, this casing comprising a bottom plate of a casing, a lateral body and a housing cover plate and being characterized in that, in the first place, the bottom, the lateral body and the cover are made of electrical insulating material of ceramic type and, in the second place, the bottom and the cover are fixed each at one end of the lateral body by glass seals, forming a sealed ceramic cavity the only metal parts of which pass through it are the access connections to the semiconductor device, these connections being located on the face of the case opposite to that on which the metal base is brazed.
L'invention et les avantages qui en découlent seront mieux compris par la description d'un exemple d'application, laquelle s'appuie sur les figures jointes en annexe et qui représentent:
- figure 1 : un boitier d'encapsulation selon l'art connu,
- figure 2 : un boitier d'encapsulation pour très hautes tensions selon l'invention.The invention and the advantages which ensue therefrom will be better understood by the description of an example of application, which is based on the figures appended in the annex and which represent:
FIG. 1: an encapsulation box according to the known art,
- Figure 2: an encapsulation box for very high voltages according to the invention.
Comme cela a été précisé, l'invention sera décrite sur le cas d'une diode, ce qui permettra de clarifier le texte et de simplifier les figures. As has been specified, the invention will be described in the case of a diode, which will make it possible to clarify the text and to simplify the figures.
Cependant, la pastille semiconductrice encapsulée pourrait tout aussi bien être celle d'un transistor par exemple.However, the encapsulated semiconductor chip could just as easily be that of a transistor for example.
La figure 1 représente un boitier d'encapsulation selon l'art connu, d'un type couramment utilisé avec les diodes PIN par exemple. Ce boitier est notamment constitué par un socle métallique 1, par un corps latéral 2, lequel fait fonction de cloison ou de cale d'épaisseur entre le socle métallique 1 et le couvercle 3 qui referme le boitier.Le corps latéral 2 et le couvercle 3 sont en matériaux isolants, tels que céramique, stéatite, alumine, oxyde de béryllium, et ces matériaux isolants seront par la suite du texte appelés, de façon générique, céramique. La pastille de semiconducteur 4 est fixée sur une dalle d'oxyde de béryllium 5, qui est un isolant électrique et un bon conducteur thermique, et elle est reliée à ses connexions de sorties 6 et 7 par l'intermédiaire de deux métallisations 8 et 9 déposées à la surface de la dalle d'oxyde de béryllium 5. La dalle d'oxyde de béryllium 5 est fixée à l'intérieur du boitier par une brasure 10 sur le socle métallique 1, tandis que les connexions de sorties 6 et 7 sont fixées par deux métallisations ou brasures 11 à travers le couvercle 3 du boitier. FIG. 1 represents an encapsulation box according to the known art, of a type commonly used with PIN diodes for example. This case is in particular constituted by a metal base 1, by a lateral body 2, which acts as a partition or shim between the metal base 1 and the cover 3 which closes the case. The side body 2 and the cover 3 are made of insulating materials, such as ceramic, soapstone, alumina, beryllium oxide, and these insulating materials will be called text, generically, ceramic. The semiconductor wafer 4 is fixed on a beryllium oxide slab 5, which is an electrical insulator and a good thermal conductor, and it is connected to its output connections 6 and 7 by means of two metallizations 8 and 9 deposited on the surface of the beryllium oxide slab 5. The beryllium oxide slab 5 is fixed inside the housing by a solder 10 on the metal base 1, while the outlet connections 6 and 7 are fixed by two metallizations or solders 11 through the cover 3 of the housing.
Eventuellement, et selon le type de boitier et de fixation, deux trous 12 pratiqués dans l'embase métallique permettent de positionner et de fixer la diode dans un système plus complexe. Optionally, and depending on the type of housing and fixing, two holes 12 made in the metal base allow the diode to be positioned and fixed in a more complex system.
Les difficultés avec ce type de boitier., aux très hautes tensions, proviennent d'abord de la proximité de l'embase 1 et de la brasure 10 par rapport aux électrodes 6 et 7 et aux métallisations 8 et 9. En effet, il est d'usage courant que la dalle d'oxyde de béryllium, en raison des problèmes de brasure, d'encombrement de prix, soit la plus petite possible par rapport à la puce semiconductrice, ce qui fait que l'espace libre 13 entre la dalle d'oxyde de béryllium 5 et le corps latéral 2 devient gênant, cet espace libre dégageant l'embase métallique 1, et favorisant les courants de fuite ou les arcs électriques entre les métallisations proches 8 et 9 et la surface supérieure de l'embase métallique 1. En outre, le corps latéral 2 est brasé sur l'embase métallique 1 au moyen d'une première brasure 14, et il est également brasé sur le couvercle 3 au moyen d'une seconde brasure 15. Les techniques de brasures sur alumines ou céramiques sont bien connues et sortent du domaine de l'invention, mais il n'en reste pas moins qu'aux très hautes tensions il se forme une chaîne, un premier condensateur formé par la métallisation 11 comme première armature, l'isolant céramique du couvercle 3 comme diélectrique et la brasure 15 comme seconde armature, puis la brasure 15 comme première armature d'un deuxième condensateur, la céramique du corps 2 comme diélectrique et la brasure 14 comme seconde armature.La chaîne des deux condensateurs ainsi formée par trois brasures et deux diélectriques favorise, lorsque la tension différentielle entre une électrode 6 ou 7- et l'embase 1 atteint des valeurs telles que 3 000 à 10 000 Volts, un courant de fuite parallèlement à la diode encapsulée pouvant entraîner un claquage distinctif
Le boitier selon l'invention apporte une solution à ces problèmes de courant de fuite et d'arcs électriques entre métallisations et embases métalliques, en réalisant un boitier qui constitue une enceinte d'où toutes brasures ou parties métalliques sont exclues dans l'épaisseur des parois de l'enceinte, hormis les métallisations de fixation des deux électrodes de sorties.The difficulties with this type of case, at very high voltages, come first from the proximity of the base 1 and the solder 10 relative to the electrodes 6 and 7 and to the metallizations 8 and 9. In fact, it is in common use that the beryllium oxide slab, due to the problems of soldering, price congestion, is as small as possible compared to the semiconductor chip, which means that the free space 13 between the slab of beryllium oxide 5 and the lateral body 2 becomes annoying, this free space releasing the metal base 1, and favoring the leakage currents or the electric arcs between the metallizations close to 8 and 9 and the upper surface of the metal base 1. In addition, the lateral body 2 is brazed on the metal base 1 by means of a first braze 14, and it is also brazed on the cover 3 by means of a second braze 15. The techniques of brazing on aluminas or ceramics are well known and fall outside the scope of the invention, but the fact remains that at very high voltages a chain is formed, a first capacitor formed by metallization 11 as the first frame, the ceramic insulation of the cover 3 as a dielectric and the solder 15 as the second frame, then the solder 15 as the first armature of a second capacitor, the ceramic of the body 2 as the dielectric and the solder 14 as the second armature. The chain of the two capacitors thus formed by three solder and two dielectrics favors, when the differential voltage between an electrode 6 or 7- and the base 1 reaches values such as 3,000 to 10,000 volts, a leakage current parallel to the encapsulated diode can cause a distinctive breakdown
The box according to the invention provides a solution to these problems of leakage current and electric arcs between metallizations and metal bases, by producing a box which constitutes an enclosure from which all solderings or metal parts are excluded in the thickness of the walls of the enclosure, apart from the metallizations for fixing the two outlet electrodes.
La figure 2 représente un boitier selon l'invention, qui est d'un type comparable à celui qui a été décrit comme boitier connu, mais dont la réalisation permet de tenir des tensions telles que 10 000 Volts -même avec des dimensions petites. FIG. 2 represents a box according to the invention, which is of a type comparable to that which has been described as a known box, but the embodiment of which makes it possible to withstand voltages such as 10,000 volts - even with small dimensions.
Le boitier selon l'invention comporte, comme le boitier selon l'art connu, une embase métallique 21 essentiellement destinée à la fixation, soit par soudure soit plus souvent par des trous 12, et à l'évacuation des calories dégagées par la pastille semiconductrice, car ce boitier est avant tout destiné à des semiconducteurs de puissance, qui par conséquent dégagent de l'énergie. La disposition à l'intérieur du boitier des objets tels que la pastille 4 semiconductrice, les métallisations 8 et 9 et les connexions de sorties 6 et 7 sont comparables à ce qui se fait selon l'art connu, et n'entre pas à proprement parler dans le domaine de l'invention. The housing according to the invention comprises, like the housing according to the known art, a metal base 21 essentially intended for fixing, either by welding or more often by holes 12, and for the evacuation of the calories released by the semiconductor wafer , because this box is primarily intended for power semiconductors, which consequently release energy. The arrangement inside the case of objects such as the semiconductor chip 4, the metallizations 8 and 9 and the output connections 6 and 7 are comparable to what is done according to known art, and does not enter properly speak in the field of the invention.
Ce qui différencie le boitier selon l'invention est que la dalle d'oxyde de béryllium 25, sur laquelle est fixée la pastille 4, a des dimensions telles qu'elle vient au contact du corps latéral 22, le contact étant assuré par l'intérieur du corps 22, disposition qui sera précisée par la suite. De son côté, le couvercle 23 du boitier vient également en contact avec -le corps latéral 22, de préférence au moyen d'un chanfrein qui permet au couvercle 23 de reposer sur une partie du corps latéral 22. What differentiates the housing according to the invention is that the beryllium oxide panel 25, on which the tablet 4 is fixed, has dimensions such that it comes into contact with the lateral body 22, the contact being ensured by the inside the body 22, arrangement which will be explained later. For its part, the cover 23 of the case also comes into contact with the lateral body 22, preferably by means of a chamfer which allows the cover 23 to rest on a part of the lateral body 22.
La dalle d'oxyde de béryllium, qui fait fonction de partie inférieure du boitier, n'est pas brasée sur le corps latéral 22 mais y est fixée par un cordon de verre fondu 26. De la même façon, le couvercle 23 n'est pas brasé sur le corps latéral 22 mais lui est fixé par un scellement de verre 27, en tout point comparable au scellement de verre 26. La partie protectrice du boitier est donc constituée par un fond de boitier 25-en oxyde de béryllium, réuni par un scellement verre à un corps latéral 22, lui-même en céramique isolante et réuni à un couvercle 23 au moyen d'un second scellement verre 27. Ainsi, mis à part l'obligatoire sortie des connexions électro ques 6 et 7, il n'y a plus aucune partie métallique dans l'épaisseur des parois du boitier selon l'invention.Un certain nombre de détails de réalisation sont importants et méritent d'être explicités. The beryllium oxide slab, which acts as the lower part of the case, is not brazed on the lateral body 22 but is fixed there by a bead of molten glass 26. Likewise, the cover 23 is not not soldered to the lateral body 22 but is fixed to it by a glass seal 27, in all points comparable to the glass seal 26. The protective part of the case therefore consists of a bottom of the case 25-made of beryllium oxide, joined by a glass seal to a lateral body 22, itself made of insulating ceramic and joined to a cover 23 by means of a second glass seal 27. Thus, apart from the compulsory output of the electrical connections 6 and 7, there is no There is no longer any metal part in the thickness of the walls of the case according to the invention. A certain number of details of construction are important and deserve to be explained.
En premier lieu, le fond de boitier 25 est préférentiellement en oxyde de béryllium puisqu'il est bien connu que ce matériau est à la fois un bon isolant électrique et un bon conducteur calorifique, mais, dans les cas où la puissance dissipée serait faible, ce fond de boitier pourrait également dans une variante de l'invention être en céramique telle que l'alumine par exemple.Par contre, il n'est pas intéressant du point de vue du coût du boitier que le corps latéral 22 ou le couvercle 23 soient en oxyde de béryllium: en effet, on recherche à éliminer les calories avant tout par le substrat de la pastille semiconductrice et par l'embase métallique, et la présence d'un corps latéral 22 et d'un couvercle 23 ne pourrait que participer à une dissipation des calories d'un côté opposé au côté du radiateur qui est celui de l'embase métallique 21, et ceci avec un mauvais rendement puisqu'il n'y a pas entre le corps latéral 22 et le couvercle 23 un contact direct avec le substrat du semiconducteur. Par conséquent, le corps latéral 22 et le couvercle 23 sont préférentiellement en alumine ou de façon plus générale en céramique bien qu'il puisse aussi être en verre. Firstly, the bottom of the case 25 is preferably made of beryllium oxide since it is well known that this material is both a good electrical insulator and a good heat conductor, but, in cases where the power dissipated is low, this bottom of the case could also in a variant of the invention be made of ceramic such as alumina for example. On the other hand, it is not advantageous from the point of view of the cost of the case that the lateral body 22 or the cover 23 are made of beryllium oxide: in fact, it is sought to eliminate the calories above all by the substrate of the semiconductor wafer and by the metal base, and the presence of a lateral body 22 and a cover 23 could only participate heat dissipation on a side opposite the side of the radiator which is that of the metal base 21, and this with poor efficiency since there is not between the lateral body 22 and the cover 23 direct contact with the semiconductor substrate eur. Consequently, the lateral body 22 and the cover 23 are preferably made of alumina or more generally of ceramic, although it can also be made of glass.
En second lieu, il a été dit que la dalle d'oxyde de béryllium 25 est scellée sur le corps latéral 22 par sa partie intérieure. En effet, on pourrait concevoir que le corps latéral 22 soit scellé sur l'embase 21, tout en étant en contact mécanique avec le fond de boitier 25, mais un tel contact métallique n'assure pas une étanchéité du boitier et un courant de fuite pourrait toujours avoir lieu entre les métallisations 8 et 9 et embase métallique 21. Secondly, it has been said that the beryllium oxide slab 25 is sealed on the lateral body 22 by its internal part. Indeed, one could conceive that the lateral body 22 is sealed on the base 21, while being in mechanical contact with the bottom of the case 25, but such a metallic contact does not ensure a seal of the case and a leakage current could still take place between metallizations 8 and 9 and metal base 21.
On pourrait également concevoir que le corps latéral 22 soit fixé par un scellement de verre sur la partie supérieure de la dalle d'oxyde béryllium 26 mais cette dernière disposition ne résiste pas au cours du fonctionnement du dispositif. En effet, lorsque la pastille semiconductrice commence à dissiper de la chaleur, la dalle d'oxyde de béryllium s'échauffe et se dilate linéairement davantage que le corps latéral-22 et le scellement verre se fend par cisaillement après très peu de temps de fonctionnement.Au contraire, avec la disposition de la figure 2, la dalle d'oxyde de béryllium 25 travaille en compression par rapport au corps latéral 22 et, bien que les coefficients de dilatation ne soient pas les mêmes, les dimensions de ce boitier et l'épaisseur du corps latéral 22 sont telles que le boitier résiste aux forces de compression exercées par la dalle d'oxyde de béryllium en dilatation: le scellement verre est intact après de nombreuses heures de fonctionnement du dispositif.It could also be conceived that the lateral body 22 is fixed by a glass seal on the upper part of the beryllium oxide slab 26 but this latter arrangement does not resist during the operation of the device. In fact, when the semiconductor wafer begins to dissipate heat, the beryllium oxide slab heats up and expands linearly more than the lateral body-22 and the glass seal splits by shearing after very little operating time On the contrary, with the arrangement of Figure 2, the beryllium oxide slab 25 works in compression relative to the lateral body 22 and, although the coefficients of expansion are not the same, the dimensions of this box and the he thickness of the lateral body 22 is such that the casing resists the compressive forces exerted by the beryllium oxide slab in expansion: the glass seal is intact after many hours of operation of the device.
Enfin, le couvercle 23 pourrait reposer sur le corps latéral 22 de la même façon que, en figure 1, le couvercle 3 repose sur le corps latéral 2. En fait, la réalisation du boitier est plus aisée si le couvercle 23 vient s'insérer dans une gorge du corps latéral 22, le ruban de verre 27, en poudre avant le scellement, étant plus facilement amené à la fusion selon cette disposition. Finally, the cover 23 could rest on the lateral body 22 in the same way as, in FIG. 1, the cover 3 rests on the lateral body 2. In fact, the production of the case is easier if the cover 23 is inserted. in a groove in the lateral body 22, the glass ribbon 27, in powder form before sealing, being more easily brought to melting according to this arrangement.
Le boitier selon l'invention comporte également, comme cela a été dit, un socle métallique 21 brasé en 10 sur le fond 25 du boitier; ce socle 21 est avantageusement chanfreiné en prévision d'inégalités possibles dans la fixation du fond de boitier 25 sur le corps latéral 22 ou de coulure de verre qui ont eu lieu lors du scellement 26. Il comporte également une lame 28 de tungstène ou de molybdène (demande de brevet 79 11023 de la Demanderesse) brasée sur la face opposée à celle qui supporte le boitier isolant, afin d'éviter les contraintes et les déformations au cours du fonctionnement. The case according to the invention also comprises, as has been said, a metal base 21 brazed at 10 on the bottom 25 of the case; this base 21 is advantageously chamfered in anticipation of possible inequalities in the fixing of the bottom of the case 25 to the lateral body 22 or of glass sagging which took place during the sealing 26. It also includes a blade 28 of tungsten or molybdenum (patent application 79 11023 of the Applicant) brazed on the face opposite to that which supports the insulating housing, in order to avoid stresses and deformations during operation.
Enfin, le boitier est achevé par soudure ou brasure des connexions extérieures 6 et 7 dans les métallisations 11. Finally, the case is completed by welding or soldering the external connections 6 and 7 in the metallizations 11.
Pour donner un ordre d'idée sur les dimensions d'un tel boitier fonctionnant jusque 10 000 Volts entre pastille et embase, mais sans que ceci n'apporte quelque limitation que se soit à l'invention, le boitier a un diamètre intérieur de l'ordre de 14 mm, une hauteur - sur la seule partie céramique 22 - de l'ordre de 8 à 10 mm, et un écartement entre -les connexions extérieures 6 et 7 de l'ordre de 7 à 8 mm. To give an idea of the dimensions of such a box operating up to 10,000 volts between the pad and the base, but without this bringing any limitation whatsoever to the invention, the box has an internal diameter of l 'order of 14 mm, a height - on the single ceramic part 22 - of the order of 8 to 10 mm, and a spacing between -the external connections 6 and 7 of the order of 7 to 8 mm.
La réalisation d'un tel boitier comporte la suite des opérations suivantes:
- sérigraphie des métallisations 8 et 9 et de la face arrière, en vue de la brasure 10, sur le fond de boitier 25, qui comme il a été dit est préférentiellement en oxyde de béryllium. Les métallisations sont des métallisations molybdène-manganèse ou nickel-or.The realization of such a box comprises the following operations:
- Screen printing of metallizations 8 and 9 and of the rear face, with a view to soldering 10, on the bottom of case 25, which, as has been said, is preferably made of beryllium oxide. The metallizations are molybdenum-manganese or nickel-gold metallizations.
- Enverrage de la périphérie du fond de boitier 25 par une pâte de verre à haute température, ce verre étant proche de la silice Si02. Cet enverrage se fait selon les techniques de sérigraphie par exemple. - Covering the periphery of the bottom of the case 25 with a paste of glass at high temperature, this glass being close to silica Si02. This is done using screen printing techniques for example.
- Enverrage de la périphérie intérieure du corps latéral 22, sur une hauteur correspondant à l'épaisseur du fond de boitier 25. Cet enverrage peut se faire également par des techniques proches de la sérigraphie ou par dépôt d'une pâte de verre à la roulette ou au pinceau. - Glazing of the inner periphery of the lateral body 22, over a height corresponding to the thickness of the bottom of the case 25. This glazing can also be done by techniques close to screen printing or by depositing a glass paste on a roller or with a brush.
- Assemblage du fond de boitier 25 sur le-corps latéral 22 par fusion du verre dans un four, à une température fonction de la nature# du verre utilisé. - Assembly of the bottom of the case 25 on the side-body 22 by melting the glass in an oven, at a temperature depending on the nature # of the glass used.
- Brasure de la pièce obtenue - constituée par le fond de boitier et le corps latéral - sur le socle 21, et montage de la pastille semiconductrice 4 sur sa métallisation 8, ainsi que les connexions externes 6 et 7 sur leur métallisation 8 et 9. - Soldering of the part obtained - constituted by the bottom of the case and the lateral body - on the base 21, and mounting of the semiconductor wafer 4 on its metallization 8, as well as the external connections 6 and 7 on their metallization 8 and 9.
- Fermeture du boitier par scellement du couvercle 23 sur le corps latéral 22 au moyen d'un scellement verre 27. Pour effectuer ce scellement 27, le couvercle 23 reçoit d'abord un enverrage sur sa périphérie, exactement de la même façon -que le fond de boitier 25 avait reçu un enverrage sur sa périphérie. Ensuite, le corps latéral 22 reçoit également un enverrage sur la partie de l'alésage qui correspond au couvercle 23. Les deux couches enverrées, face à face, du corps latéral 22 et du couvercle 23 sont alors amenées à fusion pour assurer la fermeture du boitier soit par une spire chauffante, disposée autour du boitier, soit par un rayonnement laser défocalisé, soit encore par la flamme d'un microchalumeau. - Closure of the housing by sealing the cover 23 on the lateral body 22 by means of a glass seal 27. To perform this sealing 27, the cover 23 first receives a piece of mail on its periphery, in exactly the same way as the bottom of case 25 had received a message on its periphery. Then, the lateral body 22 also receives a coating on the part of the bore which corresponds to the cover 23. The two layers sent, face to face, of the lateral body 22 and of the cover 23 are then brought to fusion to ensure the closure of the case either by a heating coil, arranged around the case, or by defocused laser radiation, or even by the flame of a micro-torch.
- En outre, le boitier selon l'invention a été au moment opportun, rempli de matière isolante telle qu'une résine de silicone, de façon à éviter les arcs à l'intérieur du boitier et à améliorer sa tenue en tension. - In addition, the housing according to the invention was timely, filled with insulating material such as silicone resin, so as to avoid arcs inside the housing and to improve its resistance to tension.
Le boitier selon l'invention a été décrit sur l'exemple d'une diode de puissance mais il est évident pour l'homme de l'art que le nombre de connexions de sorties n'est pas limitatif et que d'autres dispositifs semiconducteurs comportant un plus grand nombre d'électrodes de sorties entrent dans le domaine de l'invention; dans le cas de 3 ou 4 électrodes de sorties, les dimensions du boitier devraient être adaptées de façon à éviter les arcs entre les connexions de sorties. De façon plus générale, l'invention est précisée par les revendications suivantes. The box according to the invention has been described on the example of a power diode but it is obvious to those skilled in the art that the number of output connections is not limiting and that other semiconductor devices comprising a greater number of output electrodes are within the scope of the invention; in the case of 3 or 4 output electrodes, the dimensions of the housing should be adapted so as to avoid arcs between the output connections. More generally, the invention is specified by the following claims.
Claims (6)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8209048A FR2527837A1 (en) | 1982-05-25 | 1982-05-25 | ENCAPSULATION BOX OF A SEMICONDUCTOR DEVICE OPERATING AT VERY HIGH VOLTAGE, AND ITS MANUFACTURING METHOD |
| DE3318289A DE3318289A1 (en) | 1982-05-25 | 1983-05-19 | Housing for encapsulating a semiconductor high-voltage circuit arrangement and method of producing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8209048A FR2527837A1 (en) | 1982-05-25 | 1982-05-25 | ENCAPSULATION BOX OF A SEMICONDUCTOR DEVICE OPERATING AT VERY HIGH VOLTAGE, AND ITS MANUFACTURING METHOD |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2527837A1 true FR2527837A1 (en) | 1983-12-02 |
| FR2527837B1 FR2527837B1 (en) | 1985-05-17 |
Family
ID=9274293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8209048A Granted FR2527837A1 (en) | 1982-05-25 | 1982-05-25 | ENCAPSULATION BOX OF A SEMICONDUCTOR DEVICE OPERATING AT VERY HIGH VOLTAGE, AND ITS MANUFACTURING METHOD |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE3318289A1 (en) |
| FR (1) | FR2527837A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0116289A2 (en) * | 1983-01-12 | 1984-08-22 | Allen-Bradley Company | Power semiconductor module and package |
| EP0292848A2 (en) * | 1987-05-23 | 1988-11-30 | Asea Brown Boveri Aktiengesellschaft | Semiconductor power module and method of manufacturing it |
| EP0517967A1 (en) * | 1990-05-02 | 1992-12-16 | Harris Semiconductor Patents, Inc. | High current hermetic package |
| EP3955282A1 (en) * | 2020-08-11 | 2022-02-16 | Siemens Aktiengesellschaft | Power module with at least one power unit |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3401404A1 (en) * | 1984-01-17 | 1985-07-25 | Robert Bosch Gmbh, 7000 Stuttgart | SEMICONDUCTOR COMPONENT |
| DE4033999A1 (en) * | 1990-10-25 | 1992-04-30 | Siemens Ag | CIRCUIT MODULE WITH SAFETY HOUSING |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3469148A (en) * | 1967-11-08 | 1969-09-23 | Gen Motors Corp | Protectively covered hybrid microcircuits |
| US3748543A (en) * | 1971-04-01 | 1973-07-24 | Motorola Inc | Hermetically sealed semiconductor package and method of manufacture |
| DE2811933A1 (en) * | 1977-03-21 | 1978-09-28 | Gen Electric | PRESSABLE SEMICONDUCTOR PELLET ARRANGEMENT |
| EP0001892A1 (en) * | 1977-10-27 | 1979-05-16 | AMP INCORPORATED (a New Jersey corporation) | Lead frame and package for establishing electrical connections to electronic components |
-
1982
- 1982-05-25 FR FR8209048A patent/FR2527837A1/en active Granted
-
1983
- 1983-05-19 DE DE3318289A patent/DE3318289A1/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3469148A (en) * | 1967-11-08 | 1969-09-23 | Gen Motors Corp | Protectively covered hybrid microcircuits |
| US3748543A (en) * | 1971-04-01 | 1973-07-24 | Motorola Inc | Hermetically sealed semiconductor package and method of manufacture |
| DE2811933A1 (en) * | 1977-03-21 | 1978-09-28 | Gen Electric | PRESSABLE SEMICONDUCTOR PELLET ARRANGEMENT |
| EP0001892A1 (en) * | 1977-10-27 | 1979-05-16 | AMP INCORPORATED (a New Jersey corporation) | Lead frame and package for establishing electrical connections to electronic components |
Non-Patent Citations (1)
| Title |
|---|
| SOLID STATE TECHNOLOGY, vol.14, no.1, janvier 1971, PORT WASHINGTON (US) * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0116289A2 (en) * | 1983-01-12 | 1984-08-22 | Allen-Bradley Company | Power semiconductor module and package |
| EP0116289A3 (en) * | 1983-01-12 | 1987-01-07 | Allen-Bradley Company | Power semiconductor module and package |
| EP0292848A2 (en) * | 1987-05-23 | 1988-11-30 | Asea Brown Boveri Aktiengesellschaft | Semiconductor power module and method of manufacturing it |
| EP0292848A3 (en) * | 1987-05-23 | 1990-09-26 | Asea Brown Boveri Aktiengesellschaft | Semiconductor power module and method of manufacturing it |
| EP0517967A1 (en) * | 1990-05-02 | 1992-12-16 | Harris Semiconductor Patents, Inc. | High current hermetic package |
| EP3955282A1 (en) * | 2020-08-11 | 2022-02-16 | Siemens Aktiengesellschaft | Power module with at least one power unit |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2527837B1 (en) | 1985-05-17 |
| DE3318289A1 (en) | 1983-12-01 |
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| CL | Concession to grant licences | ||
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