FR2511047A1 - Procede pour appliquer un revetement antireflechissant et/ou dielectrique pour des cellules solaires - Google Patents
Procede pour appliquer un revetement antireflechissant et/ou dielectrique pour des cellules solaires Download PDFInfo
- Publication number
- FR2511047A1 FR2511047A1 FR8115348A FR8115348A FR2511047A1 FR 2511047 A1 FR2511047 A1 FR 2511047A1 FR 8115348 A FR8115348 A FR 8115348A FR 8115348 A FR8115348 A FR 8115348A FR 2511047 A1 FR2511047 A1 FR 2511047A1
- Authority
- FR
- France
- Prior art keywords
- metal
- chloride
- vapor
- metal halide
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 230000003667 anti-reflective effect Effects 0.000 title claims description 8
- 238000000576 coating method Methods 0.000 title description 11
- 239000011248 coating agent Substances 0.000 title description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910001507 metal halide Inorganic materials 0.000 claims description 9
- 150000005309 metal halides Chemical class 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000765 intermetallic Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims description 4
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 3
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 claims description 3
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- LMHHRCOWPQNFTF-UHFFFAOYSA-N s-propan-2-yl azepane-1-carbothioate Chemical compound CC(C)SC(=O)N1CCCCCC1 LMHHRCOWPQNFTF-UHFFFAOYSA-N 0.000 claims description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 2
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 10
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001510 metal chloride Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MMVYPOCJESWGTC-UHFFFAOYSA-N Molybdenum(2+) Chemical compound [Mo+2] MMVYPOCJESWGTC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001649 bromium compounds Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- -1 halide ion Chemical class 0.000 description 1
- 150000004694 iodide salts Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8115348A FR2511047A1 (fr) | 1981-08-07 | 1981-08-07 | Procede pour appliquer un revetement antireflechissant et/ou dielectrique pour des cellules solaires |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8115348A FR2511047A1 (fr) | 1981-08-07 | 1981-08-07 | Procede pour appliquer un revetement antireflechissant et/ou dielectrique pour des cellules solaires |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2511047A1 true FR2511047A1 (fr) | 1983-02-11 |
| FR2511047B1 FR2511047B1 (enrdf_load_stackoverflow) | 1984-03-02 |
Family
ID=9261282
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8115348A Granted FR2511047A1 (fr) | 1981-08-07 | 1981-08-07 | Procede pour appliquer un revetement antireflechissant et/ou dielectrique pour des cellules solaires |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2511047A1 (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985001361A1 (fr) * | 1983-09-12 | 1985-03-28 | Optische Werke G. Rodenstock | Revetement diminuant la reflexion pour un element optique a base d'un materiau organique |
| FR2567542A1 (fr) * | 1984-07-10 | 1986-01-17 | Westinghouse Electric Corp | Procede de |
| WO1986006105A1 (en) * | 1985-04-10 | 1986-10-23 | Stiftung Institut Für Härterei-Technik | Process for the manufacture of wear resistant binding materials |
| US9905414B2 (en) | 2000-09-28 | 2018-02-27 | President And Fellows Of Harvard College | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR896925A (fr) * | 1939-05-27 | 1945-03-07 | Jenaer Glaswerk Schott & Gen | Procédé permettant d'appliquer sur des objets solides une ou plusieurs couches superposées, minces et résistantes |
| FR1496520A (fr) * | 1965-10-13 | 1967-09-29 | Westinghouse Electric Corp | Revêtement anti-réfléchissant pour cellule solaire |
| FR91559E (fr) * | 1964-05-08 | 1968-07-05 | Int Standard Electric Corp | Perfectionnements aux méthodes de formation de couches |
| FR2025098A1 (enrdf_load_stackoverflow) * | 1968-12-03 | 1970-09-04 | Siemens Ag | |
| US3916041A (en) * | 1974-02-14 | 1975-10-28 | Westinghouse Electric Corp | Method of depositing titanium dioxide films by chemical vapor deposition |
-
1981
- 1981-08-07 FR FR8115348A patent/FR2511047A1/fr active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR896925A (fr) * | 1939-05-27 | 1945-03-07 | Jenaer Glaswerk Schott & Gen | Procédé permettant d'appliquer sur des objets solides une ou plusieurs couches superposées, minces et résistantes |
| FR91559E (fr) * | 1964-05-08 | 1968-07-05 | Int Standard Electric Corp | Perfectionnements aux méthodes de formation de couches |
| FR1496520A (fr) * | 1965-10-13 | 1967-09-29 | Westinghouse Electric Corp | Revêtement anti-réfléchissant pour cellule solaire |
| FR2025098A1 (enrdf_load_stackoverflow) * | 1968-12-03 | 1970-09-04 | Siemens Ag | |
| US3916041A (en) * | 1974-02-14 | 1975-10-28 | Westinghouse Electric Corp | Method of depositing titanium dioxide films by chemical vapor deposition |
Non-Patent Citations (1)
| Title |
|---|
| EXBK/66 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1985001361A1 (fr) * | 1983-09-12 | 1985-03-28 | Optische Werke G. Rodenstock | Revetement diminuant la reflexion pour un element optique a base d'un materiau organique |
| EP0140096A3 (en) * | 1983-09-12 | 1985-06-05 | Optische Werke G. Rodenstock | Reflective diminishing coating for an optical element of organic material |
| US4927239A (en) * | 1983-09-12 | 1990-05-22 | Optische Werke G. Rodenstock | Anti-reflection film for an optical element consisting of an organic material |
| FR2567542A1 (fr) * | 1984-07-10 | 1986-01-17 | Westinghouse Electric Corp | Procede de |
| WO1986006105A1 (en) * | 1985-04-10 | 1986-10-23 | Stiftung Institut Für Härterei-Technik | Process for the manufacture of wear resistant binding materials |
| US9905414B2 (en) | 2000-09-28 | 2018-02-27 | President And Fellows Of Harvard College | Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2511047B1 (enrdf_load_stackoverflow) | 1984-03-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |