FR2509638B3 - - Google Patents

Info

Publication number
FR2509638B3
FR2509638B3 FR8212588A FR8212588A FR2509638B3 FR 2509638 B3 FR2509638 B3 FR 2509638B3 FR 8212588 A FR8212588 A FR 8212588A FR 8212588 A FR8212588 A FR 8212588A FR 2509638 B3 FR2509638 B3 FR 2509638B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8212588A
Other languages
French (fr)
Other versions
FR2509638A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HELIOSIL SpA
Original Assignee
HELIOSIL SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HELIOSIL SpA filed Critical HELIOSIL SpA
Publication of FR2509638A1 publication Critical patent/FR2509638A1/fr
Application granted granted Critical
Publication of FR2509638B3 publication Critical patent/FR2509638B3/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
FR8212588A 1981-07-20 1982-07-19 Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires Granted FR2509638A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23007/81A IT1137729B (it) 1981-07-20 1981-07-20 Stampo e procedimento per la fusione di lingotti di silicio atti ad essere utilizzati come materiale per celle solari

Publications (2)

Publication Number Publication Date
FR2509638A1 FR2509638A1 (fr) 1983-01-21
FR2509638B3 true FR2509638B3 (OSRAM) 1984-08-10

Family

ID=11202800

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8212588A Granted FR2509638A1 (fr) 1981-07-20 1982-07-19 Moule et procede pour le moulage de lingots de silicium destines a etre utilises comme materiau pour la realisation de cellules solaires

Country Status (4)

Country Link
BE (1) BE893894A (OSRAM)
DE (1) DE3226440A1 (OSRAM)
FR (1) FR2509638A1 (OSRAM)
IT (1) IT1137729B (OSRAM)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
FR2853913B1 (fr) 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
DE102005024957A1 (de) * 2005-05-31 2006-12-07 Saint-Gobain Industriekeramik Rödental GmbH Mehrteiliger, dünnwandiger Tiegel mit Einlage aus Quarzglasgewebe oder Quarzglasfilz zum Abkühlen von Si-Schmelzen
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
EP2589687A1 (en) 2011-11-04 2013-05-08 Vesuvius France (S.A.) Crucible and method for the production of a (near ) monocrystalline semiconductor ingot

Also Published As

Publication number Publication date
FR2509638A1 (fr) 1983-01-21
IT8123007A0 (it) 1981-07-20
BE893894A (fr) 1982-11-16
DE3226440A1 (de) 1983-02-03
IT1137729B (it) 1986-09-10

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Legal Events

Date Code Title Description
ST Notification of lapse