FR2502190B1 - - Google Patents
Info
- Publication number
- FR2502190B1 FR2502190B1 FR8105387A FR8105387A FR2502190B1 FR 2502190 B1 FR2502190 B1 FR 2502190B1 FR 8105387 A FR8105387 A FR 8105387A FR 8105387 A FR8105387 A FR 8105387A FR 2502190 B1 FR2502190 B1 FR 2502190B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Light Receiving Elements (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8105387A FR2502190A1 (fr) | 1981-03-18 | 1981-03-18 | Procede de preparation de cristaux de hg1-x cdx te |
| DE8282400310T DE3260806D1 (en) | 1981-03-18 | 1982-02-22 | Method of preparing hg1-x cdx te crystals |
| EP82400310A EP0060744B1 (fr) | 1981-03-18 | 1982-02-22 | Procédé de préparation de cristaux de Hg1-x Cdx Te |
| JP57041779A JPS5938190B2 (ja) | 1981-03-18 | 1982-03-18 | Ｈｇ↓１−↓ｘＣｄ↓ｘＴｅの結晶の製造方法 |
| US06/782,200 US4662980A (en) | 1981-03-18 | 1985-09-30 | Process for preparing crystals of Hg1-x Cdx Te |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8105387A FR2502190A1 (fr) | 1981-03-18 | 1981-03-18 | Procede de preparation de cristaux de hg1-x cdx te |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2502190A1 FR2502190A1 (fr) | 1982-09-24 |
| FR2502190B1 true FR2502190B1 (US20080094685A1-20080424-C00004.png) | 1983-05-27 |
Family
ID=9256364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8105387A Granted FR2502190A1 (fr) | 1981-03-18 | 1981-03-18 | Procede de preparation de cristaux de hg1-x cdx te |
Country Status (5)
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2536767A1 (fr) * | 1982-11-30 | 1984-06-01 | Commissariat Energie Atomique | Procede d'elaboration de composes semi-conducteurs ternaires ou quaternaires |
| FR2560226B1 (fr) * | 1983-08-17 | 1986-08-08 | Commissariat Energie Atomique | Procede de preparation d'un alliage polycristallin destine a la realisation de monocristaux par passage dans une zone de solvant |
| US4728388A (en) * | 1983-08-17 | 1988-03-01 | Commissariat A L'energie Atomique | Process for producing a monocrystal of a compound by crystallizing a polycrystal of said compound by transferring a solvent zone |
| FR2560227B1 (fr) * | 1983-08-17 | 1992-01-03 | Comp Generale Electricite | Procede de preparation d'une zone de solvant pour la realisation de composes semiconducteurs |
| FR2593196B1 (fr) * | 1986-01-21 | 1988-04-15 | Telecommunications Sa | Procede de preparation d'un lingot cristallin de hg1-xo cdxo te |
| FR2629476B1 (fr) * | 1988-04-01 | 1990-11-30 | Telecommunications Sa | Procede de preparation d'un lingot cristallin de hgcdte |
| US6189793B1 (en) * | 1992-06-12 | 2001-02-20 | Metrologic Instruments, Inc. | Automatic laser projection scanner with improved activation controlling mechanism |
| ES2066726A1 (es) * | 1993-06-03 | 1995-03-01 | Univ Madrid | Procedimiento y dispositivo para la preparacion de monocristales semiconductores en volumen y su aplicacion al crecimiento del monocristalesde hg1-xcdxte. |
| US6273969B1 (en) | 1998-01-07 | 2001-08-14 | Rensselaer Polytechnic Institute | Alloys and methods for their preparation |
| FR2828214B1 (fr) * | 2001-08-06 | 2003-12-12 | Centre Nat Rech Scient | PROCEDE D'OBTENTION D'UN MONOCRISTAL DE CdTd OU DE CdZnTe, ET MONOCRISTAL OBTENU PAR CE PROCEDE |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3241925A (en) * | 1960-08-19 | 1966-03-22 | Union Carbide Corp | Apparatus for growing solid homogeneous compositions |
| US3429818A (en) * | 1965-02-12 | 1969-02-25 | Tyco Laboratories Inc | Method of growing crystals |
| US3496118A (en) * | 1966-04-19 | 1970-02-17 | Bell & Howell Co | Iiib-vb compounds |
| US3622399A (en) * | 1968-12-31 | 1971-11-23 | Texas Instruments Inc | Method for preparing single crystal pseudobinary alloys |
| US3771970A (en) * | 1970-02-02 | 1973-11-13 | Tyco Laboratories Inc | Method of producing cadmium telluride crystals |
| US3880677A (en) * | 1972-12-27 | 1975-04-29 | Zaidan Hojin Handotai Kenkyu | Method for producing a single crystal of In{hd x{b Ga{hd 1{118 x{b P |
| US4187139A (en) * | 1973-02-14 | 1980-02-05 | U.S. Philips Corporation | Growth of single crystal bismuth silicon oxide |
| US4076572A (en) * | 1973-07-05 | 1978-02-28 | Hughes Aircraft Company | Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system |
| FR2295792A1 (fr) * | 1974-12-24 | 1976-07-23 | Commissariat Energie Atomique | Procede d'elaboration de semi-conducteurs composes |
| GB2051607B (en) * | 1979-07-05 | 1983-06-29 | Philips Electronic Associated | Method of making monocrystalline ternary semiconductor material |
| US4401487A (en) * | 1980-11-14 | 1983-08-30 | Hughes Aircraft Company | Liquid phase epitaxy of mercury cadmium telluride layer |
-
1981
- 1981-03-18 FR FR8105387A patent/FR2502190A1/fr active Granted
-
1982
- 1982-02-22 DE DE8282400310T patent/DE3260806D1/de not_active Expired
- 1982-02-22 EP EP82400310A patent/EP0060744B1/fr not_active Expired
- 1982-03-18 JP JP57041779A patent/JPS5938190B2/ja not_active Expired
-
1985
- 1985-09-30 US US06/782,200 patent/US4662980A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57166392A (en) | 1982-10-13 |
| EP0060744B1 (fr) | 1984-09-26 |
| US4662980A (en) | 1987-05-05 |
| FR2502190A1 (fr) | 1982-09-24 |
| EP0060744A1 (fr) | 1982-09-22 |
| JPS5938190B2 (ja) | 1984-09-14 |
| DE3260806D1 (en) | 1984-10-31 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| ST | Notification of lapse |