DE3260806D1 - Method of preparing hg1-x cdx te crystals - Google Patents

Method of preparing hg1-x cdx te crystals

Info

Publication number
DE3260806D1
DE3260806D1 DE8282400310T DE3260806T DE3260806D1 DE 3260806 D1 DE3260806 D1 DE 3260806D1 DE 8282400310 T DE8282400310 T DE 8282400310T DE 3260806 T DE3260806 T DE 3260806T DE 3260806 D1 DE3260806 D1 DE 3260806D1
Authority
DE
Germany
Prior art keywords
cdx
crystals
preparing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282400310T
Other languages
English (en)
Inventor
Robert Georges Lucie Triboulet
Gerard Emile Joseph Didier
Alain Rene Lucien Durand
Michel Royer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Anonyme de Telecommunications SAT
Original Assignee
Societe Anonyme de Telecommunications SAT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Anonyme de Telecommunications SAT filed Critical Societe Anonyme de Telecommunications SAT
Application granted granted Critical
Publication of DE3260806D1 publication Critical patent/DE3260806D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/02—Zone-melting with a solvent, e.g. travelling solvent process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
DE8282400310T 1981-03-18 1982-02-22 Method of preparing hg1-x cdx te crystals Expired DE3260806D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8105387A FR2502190A1 (fr) 1981-03-18 1981-03-18 Procede de preparation de cristaux de hg1-x cdx te

Publications (1)

Publication Number Publication Date
DE3260806D1 true DE3260806D1 (en) 1984-10-31

Family

ID=9256364

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282400310T Expired DE3260806D1 (en) 1981-03-18 1982-02-22 Method of preparing hg1-x cdx te crystals

Country Status (5)

Country Link
US (1) US4662980A (de)
EP (1) EP0060744B1 (de)
JP (1) JPS5938190B2 (de)
DE (1) DE3260806D1 (de)
FR (1) FR2502190A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2536767A1 (fr) * 1982-11-30 1984-06-01 Commissariat Energie Atomique Procede d'elaboration de composes semi-conducteurs ternaires ou quaternaires
FR2560226B1 (fr) * 1983-08-17 1986-08-08 Commissariat Energie Atomique Procede de preparation d'un alliage polycristallin destine a la realisation de monocristaux par passage dans une zone de solvant
US4728388A (en) * 1983-08-17 1988-03-01 Commissariat A L'energie Atomique Process for producing a monocrystal of a compound by crystallizing a polycrystal of said compound by transferring a solvent zone
FR2560227B1 (fr) * 1983-08-17 1992-01-03 Comp Generale Electricite Procede de preparation d'une zone de solvant pour la realisation de composes semiconducteurs
FR2593196B1 (fr) * 1986-01-21 1988-04-15 Telecommunications Sa Procede de preparation d'un lingot cristallin de hg1-xo cdxo te
FR2629476B1 (fr) * 1988-04-01 1990-11-30 Telecommunications Sa Procede de preparation d'un lingot cristallin de hgcdte
US6189793B1 (en) * 1992-06-12 2001-02-20 Metrologic Instruments, Inc. Automatic laser projection scanner with improved activation controlling mechanism
ES2066726A1 (es) * 1993-06-03 1995-03-01 Univ Madrid Procedimiento y dispositivo para la preparacion de monocristales semiconductores en volumen y su aplicacion al crecimiento del monocristalesde hg1-xcdxte.
US6273969B1 (en) 1998-01-07 2001-08-14 Rensselaer Polytechnic Institute Alloys and methods for their preparation
FR2828214B1 (fr) * 2001-08-06 2003-12-12 Centre Nat Rech Scient PROCEDE D'OBTENTION D'UN MONOCRISTAL DE CdTd OU DE CdZnTe, ET MONOCRISTAL OBTENU PAR CE PROCEDE

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
US3429818A (en) * 1965-02-12 1969-02-25 Tyco Laboratories Inc Method of growing crystals
US3496118A (en) * 1966-04-19 1970-02-17 Bell & Howell Co Iiib-vb compounds
US3622399A (en) * 1968-12-31 1971-11-23 Texas Instruments Inc Method for preparing single crystal pseudobinary alloys
US3771970A (en) * 1970-02-02 1973-11-13 Tyco Laboratories Inc Method of producing cadmium telluride crystals
US3880677A (en) * 1972-12-27 1975-04-29 Zaidan Hojin Handotai Kenkyu Method for producing a single crystal of In{hd x{b Ga{hd 1{118 x{b P
US4187139A (en) * 1973-02-14 1980-02-05 U.S. Philips Corporation Growth of single crystal bismuth silicon oxide
US4076572A (en) * 1973-07-05 1978-02-28 Hughes Aircraft Company Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system
FR2295792A1 (fr) * 1974-12-24 1976-07-23 Commissariat Energie Atomique Procede d'elaboration de semi-conducteurs composes
GB2051607B (en) * 1979-07-05 1983-06-29 Philips Electronic Associated Method of making monocrystalline ternary semiconductor material
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer

Also Published As

Publication number Publication date
JPS57166392A (en) 1982-10-13
EP0060744B1 (de) 1984-09-26
US4662980A (en) 1987-05-05
FR2502190A1 (fr) 1982-09-24
FR2502190B1 (de) 1983-05-27
EP0060744A1 (de) 1982-09-22
JPS5938190B2 (ja) 1984-09-14

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee