FR2498816A1 - Molybdenum di:sulphide semiconductor device mfr. - including heat treatment in hydrogen plasma - Google Patents
Molybdenum di:sulphide semiconductor device mfr. - including heat treatment in hydrogen plasma Download PDFInfo
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- FR2498816A1 FR2498816A1 FR8101764A FR8101764A FR2498816A1 FR 2498816 A1 FR2498816 A1 FR 2498816A1 FR 8101764 A FR8101764 A FR 8101764A FR 8101764 A FR8101764 A FR 8101764A FR 2498816 A1 FR2498816 A1 FR 2498816A1
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- heat treatment
- molybdenum
- mos2
- temperature
- hydrogen
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- 239000001257 hydrogen Substances 0.000 title claims abstract description 18
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 238000010438 heat treatment Methods 0.000 title claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 title claims description 8
- 239000011733 molybdenum Substances 0.000 title claims description 8
- 239000004065 semiconductor Substances 0.000 title abstract description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 13
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 11
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 238000002425 crystallisation Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims abstract description 3
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-M hydrosulfide Chemical compound [SH-] RWSOTUBLDIXVET-UHFFFAOYSA-M 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 108090000623 proteins and genes Proteins 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 241001279686 Allium moly Species 0.000 description 1
- 241000272814 Anser sp. Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Pour réaliser des dispositifs électroniques à semi-conducteurs sur de grandes surfaces par exemple supérieures à 100 cm2, les techniques utilisant des matériaux monocristallins ne sont pas applicables. To produce semiconductor electronic devices on large areas, for example greater than 100 cm 2, the techniques using monocrystalline materials are not applicable.
On sait que le MoS2 est un matériau pouvant être déposé en couche mince sur grande surface et permettant la réalisation de dispositifs notamment oie piles solaires. Il présente, par rapport au silicium polycristallin déposé en couche mince, l'avantage, entre autres, de ne pas présenter de joints de grains dont on sait qu'ils détériorent les caractéristiques des dispositifs.We know that MoS2 is a material that can be deposited in a thin layer over a large area and allows the production of devices, in particular goose solar cells. Compared with polycrystalline silicon deposited in a thin layer, it has the advantage, among other things, of not having grain boundaries which are known to deteriorate the characteristics of the devices.
Pour que le Mov amorphe soit utilisable pour des dispositifs, il faut que certaines conditions soient réalisées. En particulier, les techniques de dépôt sous vide, telle que pulvérisation et évaporation, conduisent en général à un matériau présentant de nombreuses liaisons chimiques brisées (1019 à 1020 par cl3). Ces liaisons, d'une part introduisent une conductivité électrique parasite et d'autre part empêchent de modifier par dopage ou effet de champ la position du niveau de Fermi nécessité primordiale pour le fonctionnement de la plupart des dispositifs. For the amorphous Mov to be usable for devices, certain conditions must be fulfilled. In particular, vacuum deposition techniques, such as spraying and evaporation, generally lead to a material having many broken chemical bonds (1019 to 1020 per cl3). These connections, on the one hand introduce a parasitic electrical conductivity and on the other hand prevent modifying by doping or field effect the position of the Fermi level which is essential for the operation of most devices.
On a proposé deux techniques visant à obtenir du Bisulfure de
Molybdène (MoS2) amorphe sans liaison brisée.Two techniques have been proposed for obtaining Bisulfide
Amorphous molybdenum (MoS2) without broken bond.
Première technique
On procède par décomposition du silane avec la particularité que cette décomposition est effectuée à basse température (moins de 6000C) en présence d'un champ électrique de haute fréquence ionisant le gaz.First technique
One proceeds by decomposition of the silane with the particularity that this decomposition is carried out at low temperature (less than 6000C) in the presence of a high frequency electric field ionizing the gas.
Deuxisme technique
On utilise le procédé par pulvérisation cathodique d'une cible en
MoS2 dans une atmosphère réactive d'hydrogène.Technical duism
We use the sputtering process of a target in
MoS2 in a reactive hydrogen atmosphere.
Les deux techniques précitées introduisent une grande quantité d'hydrogène dans le matériau (10 à 30 % du nombre d'atomes de MoS2 selon les auteurs). Comme cette quantité d'hydrogène est difficile à contrôler et qu'elle influe sur les propriétés électriques du matériau, on rencontre des difficultés importantes pour obtenir un matériau homogène sur de grandes surfaces. L'hydrogène peut également ne pas être stable thermiquement. The two aforementioned techniques introduce a large amount of hydrogen into the material (10 to 30% of the number of MoS2 atoms according to the authors). As this amount of hydrogen is difficult to control and it influences the electrical properties of the material, there are significant difficulties in obtaining a homogeneous material over large areas. Hydrogen may also not be thermally stable.
L'invention vise à supprimer aussi totalement que possible les in convénients précités. The invention aims to eliminate as completely as possible the aforementioned disadvantages.
Le principe de l'invention consiste à déposer du Bisulfure de
Molybdène amorphe, en couche mince, dans des conditions assurant la pureté du dépôt obtenu, c'est-à-dire par évaporation ou pulvérisation sans hydrogène, et à traiter thermiquement ensuite le dépôt dans un plasma d'hydrogène. Le plasma est fondamental pour que l'hydrogène soit sous forme atomique ce qui facilite son insertion dans le matériau.The principle of the invention consists in depositing Bisulfide
Amorphous molybdenum, in a thin layer, under conditions ensuring the purity of the deposit obtained, that is to say by evaporation or spraying without hydrogen, and then heat treating the deposit in a hydrogen plasma. Plasma is fundamental for hydrogen to be in atomic form which facilitates its insertion into the material.
Le traitement doit avoir lieu à température suffisamment élevée pour permettre la diffusion de l'hydrogène, mais suffisamment basse pour éviter une cristallisation du matériau amorphe. Le principe est que la majorité des atomes d'hydrogène ainsi introduits iront saturer les liaisons brisées d'atomes de MoS2, soit nettement moins que dans les techniques connues précitées.The treatment must take place at a temperature high enough to allow the diffusion of hydrogen, but low enough to avoid crystallization of the amorphous material. The principle is that the majority of the hydrogen atoms thus introduced will saturate the broken bonds of atoms of MoS2, ie significantly less than in the aforementioned known techniques.
Le procédé de fabrication suivant l'invention est caractérisé en ce qu'il comporte un traitement/d~Bisture de Molybdène amorphe (préalablement déposé par dépôt sous vide), ledit traitement consistant à maintenir le MoS2 dans l'atmosphère d'un plasma contenant de l'hydrogène ou l'un de ses isotopes. Dans tout ce qui suit le terme hydrogène recouvre llhydrogène pur ou l'un de ses isotopes, ou un mélange de ces corps. La température du traitement thermique est comprise entre l000C et la température de cristallisation du Bisulfure de Molybdène amorphe (généralement comprise entre 5000C et 6000C). The manufacturing process according to the invention is characterized in that it comprises a treatment / d ~ Amorphous Molybdenum bisture (previously deposited by vacuum deposition), said treatment consisting in maintaining the MoS2 in the atmosphere of a plasma containing hydrogen or one of its isotopes. In what follows the term hydrogen covers pure hydrogen or one of its isotopes, or a mixture of these bodies. The temperature of the heat treatment is between 1000C and the crystallization temperature of amorphous Molybdenum Disulfide (generally between 5000C and 6000C).
L'invention sera mieux comprise, et d'autres caractéristiques apparaîtront au moyen de la description qui suit, et du dessin qui l'accompagne, lequel représente un mode de réalisation de l'étape caractéristique de l'invention. The invention will be better understood, and other characteristics will appear from the following description, and from the accompanying drawing, which represents an embodiment of the characteristic step of the invention.
La figure unique représente en effet schématiquement un ensemble de moyens permettant d'effectuer le recuit Bisulfure de Molybdène amorphe dans une atmosphère de palsma d'hydrogène. The single figure in fact schematically represents a set of means making it possible to perform amorphous molybdenum disulphide annealing in an atmosphere of hydrogen palsma.
Les moyens représentés sur la figure unique comprennnent - une plaque # 3 métallique ou de métal fondu, qui est utilisée
comme support d'un substrat 1 portant une couche 2 de Bisul
fure de Molybdène amorphe.The means shown in the single figure include - a metal or molten metal plate # 3, which is used
as support for a substrate 1 carrying a layer 2 of Bisul
amorphous molybdenum fure.
- un thermocouple 4 que l'on dispose sur le support 3 au voisinage
immédiat de la couche 2 ; il est destiné à contrôler la tempéra
pendant le traitement.- a thermocouple 4 which is placed on the support 3 in the vicinity
immediate of layer 2; it is intended to control the temperature
during treatment.
- Une enceinte 5 constituée par exemple par un tube 51 en Molyd
bène fondu, fermé à une extrémité par un embout 52 traversé
par un tube 6 de plus faible diamètre que le tube 51 ; ce tube
est destiné à faire circuler un courant d'hydrogène dans lten-
ceinte ; il est muni d'une vanne 61. A l'autre extrémité de ce
tube 51 on trouve une canalisation 7 de raccordement à une
pompe à vide.- An enclosure 5 constituted for example by a tube 51 in Molyd
molten container, closed at one end by a through tip 52
by a tube 6 of smaller diameter than the tube 51; this tube
is intended to circulate a stream of hydrogen in lten-
girdle; it is fitted with a valve 61. At the other end of this
tube 51 there is a pipe 7 for connection to a
vacuum pump.
- Des moyens de faire le vide dans l'enceinte 5, comprenant une
pompe à vide représentée symboliquement par une flèche marquée
P ; ces moyens sont capables de maintenir la pression d'hydro
gène au-dessous de 0,1 Bar pour un débit de l'ordre d'une
fraction de libre par minute.- Means for creating a vacuum in enclosure 5, comprising a
vacuum pump symbolically represented by an arrow marked
P; these means are capable of maintaining the hydro pressure
gene below 0.1 Bar for a flow rate of around one
free fraction per minute.
- Un enroulement 8 de fil conducteur alimenté en courant électri
que de haute fréquence, capable de créer un plasma dans la
région de l'enceinte 5 où est placé le support 3.- A winding 8 of conductive wire supplied with electric current
that of high frequency, capable of creating a plasma in the
enclosure region 5 where support 3 is placed.
- Un système de chauffage par radiation comportant une source 9
et un réflecteur 10, capable d'envoyer un flux sensiblement
uniforme sur une surface de l'ordre de la plus grande couche de
Bisulfure de Molybdène à traiter.- A radiant heating system comprising a source 9
and a reflector 10, capable of sending a substantially flux
uniform over an area on the order of the largest layer of
Molybdenum disulfide to be treated.
Dans l'ensemble considéré, le dépôt a été effectué au préalable, par évaporation sur un substrat 1 bisulfure de Molybdène fondu maintenu à 4000C. La couche 2 de Molybdène amorphe a une épaisseur de 0,5 micron. L'évaporation a été effectuée à une pression très réduite de l'ordre de 1.10 9 Bar. In the assembly considered, the deposition was carried out beforehand, by evaporation on a substrate 1 moly molybdenum disulphide maintained at 4000C. Layer 2 of amorphous Molybdenum has a thickness of 0.5 microns. Evaporation was carried out at a very reduced pressure of the order of 1.10 9 Bar.
Les conditions ont pour objectif d'obtenir du Molybdène amorphe très pur ayant le moins possible de défauts tels que cavités et inhomo généités. The conditions are aimed at obtaining very pure amorphous molybdenum having as few defects as possible, such as cavities and inhomo genes.
Le traitement est effectué dans l'appareil représenté à une température de 3000C, sous une pression d'hydrogène de 0,1 Bar, pendant deux heures. Avant le traitement, la résistivité était de 1.105 n cm et l'échantillon contenait plus de 1019 liaisons brisées par cm3 (quantité déterminée par résonnance paramagnétique électronique). Après traitement la résistivité augmente jusqu'à 1.108 n cm. Il y a moins de 1017 liaisons brisées par cm3. Avec ces caractéristiques, le matériau est utilisable comme base pour réaliser des dispositifs électroniques. En particulier, on a vérifié son caractère photoconducteur. The treatment is carried out in the apparatus shown at a temperature of 3000C, under a hydrogen pressure of 0.1 Bar, for two hours. Before the treatment, the resistivity was 1.105 n cm and the sample contained more than 1019 broken bonds per cm3 (quantity determined by electronic paramagnetic resonance). After treatment the resistivity increases to 1.108 n cm. There are less than 1017 broken bonds per cm3. With these characteristics, the material can be used as a basis for producing electronic devices. In particular, we checked its photoconductive nature.
Il en résulte que le matériau peut être utilisé pour réaliser des piles solaires. Toutefois, les formes et dimensions éléments pourront varier dans la limite des équivalentes, comme d'ailleurs les matériaux pour leurs fabrications, sans changer pour cela l'invention qui d'être décrite. As a result, the material can be used to make solar cells. However, the shapes and dimensions of the elements may vary within the limit of the equivalents, like the materials for their manufacture, without changing the invention to be described.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8101764A FR2498816A1 (en) | 1981-01-28 | 1981-01-28 | Molybdenum di:sulphide semiconductor device mfr. - including heat treatment in hydrogen plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8101764A FR2498816A1 (en) | 1981-01-28 | 1981-01-28 | Molybdenum di:sulphide semiconductor device mfr. - including heat treatment in hydrogen plasma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR2498816A1 true FR2498816A1 (en) | 1982-07-30 |
Family
ID=9254660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8101764A Withdrawn FR2498816A1 (en) | 1981-01-28 | 1981-01-28 | Molybdenum di:sulphide semiconductor device mfr. - including heat treatment in hydrogen plasma |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2498816A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112110411A (en) * | 2019-06-19 | 2020-12-22 | 中国科学院物理研究所 | Method for preparing suspended layered metal chalcogenide |
-
1981
- 1981-01-28 FR FR8101764A patent/FR2498816A1/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112110411A (en) * | 2019-06-19 | 2020-12-22 | 中国科学院物理研究所 | Method for preparing suspended layered metal chalcogenide |
| CN112110411B (en) * | 2019-06-19 | 2023-06-06 | 中国科学院物理研究所 | Method for preparing suspended lamellar metal chalcogenides |
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